• Progress in Superconductivity
• /
• v.5 no.1
• /
• pp.80-83
• /
• 2003

Superconducting YBCO thin films are fabricated on single-crystalline substrates by Metallo-organic Depostion process employing Trifluoroacetic acid as a chelating agent (MOD-TFA). (100)-oriented single crystalline LaAlO$_3$ substrates were employed to grow superconducting film with high crystallinity. The fully processed YBCO thin films were characterized with XRD, SEM, EDS, etc. The microstructures of YBCO thin films show labyrinth-like patterns. The origin of this microstructure was delineated by compositional inhomogeneity during the MOD process and it was shown that the microstructure may be modified by additives. In this work, effects of additives on the microstructures and electrical properties of YBCO thin films have been investigated.

• Proceedings of the KIEE Conference
• /
• 2003.10a
• /
• pp.49-52
• /
• 2003

Single crystalline silicon (SCS) was adopted for a reliable micromirror array of biochip fabrication applications. SCS has excellent mechanical properties and smooth surface, which is the best material for micromirror devices. The mirror array has $16{\times}16$ micromirrors and each mirror has a $120{\mu}m{\times}100{\mu}m$ reflective surface. The micromirror has simple torsional beam springs and electrostatic force was used for driving. The designed tilting angle was $9.6^{\circ}$, and the tilting angles were measured according to applied voltages. The surface roughness was measured by a laser profiler. The response time was measured using He-Ne laser and position sensitive diode (PSD), and the lifetime was checked for reliability proof.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1505_1506
• /
• 2009

In this paper, micro cantilevers which are made of two different materials - fused quartz and single crystalline silicon - and have similar dimensions were fabricated and their mechanical Q-factors were evaluated to compare intrinsic damping properties of those two materials. Resonant frequencies and Q-factors were measured for the cantilevers having fixed widths and thicknesses, and different lengths. The measured Q-values are in a range of 64,000 - 108,000 for fused quartz cantilevers, and 31,000 - 35,000 for silicon cantilevers, respectively. Experimental results support high Q-factors of fused quartz compared to single crystalline silicon due to its good intrinsic damping properties.

• Journal of Powder Materials
• /
• v.19 no.5
• /
• pp.367-372
• /
• 2012

Single crystalline Cu nanowires with controlled diameters and aspect ratios have been synthesized using electrochemical deposition within confined nanochannels of a porous anodic aluminium oxide(AAO) template. The diameters of nano-sized cylindrical pores in AAO template were adjusted by controlling the anodization conditions. Cu nanowires with diameters of approximately 38, 99, 274 nm were synthesized by the electrodeposition using the AAO templates. The crystal structure, morphology and microstructure of the Cu nanowires were systematically investigated using XRD, FE-SEM, TEM and SAED. Investigation results revealed that the Cu nanowires had the controlled diameter, high aspect ratio and single crystalline nature.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.1001-1003
• /
• 1998

In this paper, $Ar^+$ ion laser etching process of single/poly crystalline silicon with $CCl_{2}F_{2}$ gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile etched in repeating scanning cycle. From the etching of $2.6{\mu}m$ thick polycrystalline Si deposited on insulator, trench with flat bottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.

• 한국정보통신설비학회:학술대회논문집
• /
• 2003.08a
• /
• pp.93-95
• /
• 2003

We have designed and fabricated a micromirror array using single crystalline silicon (SCS) for data communication applications. The mirror array has $16{\times}16$ micromirrors and each mirror has $120{\mu}m{\times}100{\mu}m$ reflective surface. Electrostatic force was adopted as a driving mechanism. The spring dimensions were determined using relationship between spring dimensions and driving voltage. The designed tilting angle was $9.6^{\circ}$, and measured tilting angle according to applied voltages were experimented. The response time was measured using He-Ne laser and position sensitive diode (PSD), and lifetime was checked for reliability proof.

• Journal of Electrical Engineering and information Science
• /
• v.3 no.1
• /
• pp.110-116
• /
• 1998

A single-crystalline epitaxial film of GaAs has been grown on Si using a gs assisted-ionized vapour beam eptaxial technique. The native oxide layer on the silicon substrate was removed at 550$^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at 550$^{\circ}C$. Transmission electron microscopy and electron diffraction data suggest that the GaAs layer is an epitaxially grown single-crystalline layer. The possibility of growing device quality GaAs on Si is able demonstrated through fabrication of GaAs MODFET on Si substrates.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.28A no.10
• /
• pp.814-820
• /
• 1991

TaSi$_2$ was formed by rapid thermal annealing(RTA) on BF$_2$ doped single crystalline silicon substrates. The formation and various properties of TaSi$_2$ have been investigated by using 4-point probe, HP414, XRD, and SEM. And the redistribution of boron with RTA has been observed by SIMS. Implanted boron was diffused out into the TaSi$_2$ for RTA temperature but did not significantly affect the formation temperature of TaSi$_2$. Also, the contact resistance for TaSi$_2$/p$^{+}$ region had a low value 22$\Omega$, at contact size of 0.9$\mu$m, and the native oxide formed on Si-substrates by BF$_2$ implantation retarded the formation of TaSi$_2$.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2010.06a
• /
• pp.80-81
• /
• 2010

We observed period of SdH oscillation in an individual Bi nanowire with the transverse and longitudinal magnetic fields along the axis of the nanowire grown by OFF-ON. Our results provide good qualitative description of the cyclotron behavior of the single-crystalline Bi nanowire in the ballistic regime.

• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1896-1901
• /
• 2008

Single crystalline copper nanowires are subjected to bending tests using molecular dynamics simulations and the embedded atom method. To observe behaviors of nanowire, bending tests are performed for various rates of deflection and different boundary conditions: fixed-free and fixed-fixed. When the deflection of nanowire becomes large, twinnings and dislocations appear, and <100> crystal structure transforms to <110>. At high rates, phase transformation occurs in whole nanowire. But, at low rates, atomic structure changes to <110> phase partially. The final deformed structures are affected by the rate of deflection and boundary conditions. These effects can be important design parameters at nanoscale.