• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1533-1536
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• 2006

A novel single cell gap transflective liquid crystal display was developed. By using the ink jet printing technology, we fabricated a transflective liquid crystal display with the hybrid alignment in the reflective region and the homogeneous alignment in the transmission region. Compared with the traditional technologies, our technology provided the advantages of easy process, high yield, fast throughput, and less material usage. We also applied this technology to the 2.4 inch prototype. This panel could be implemented in the handheld product applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.567-570
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• 2004

We have designed a single gap transflective liquid crystal display (LCD) driven by a fringe electric field, in which the LCs are homogeneously aligned in the initial state. In the reflective and transmissive areas, the degrees of the rotation of the LC director are $22.5^{\circ}$ and $45^{\circ}$, respectively. Utilizing this mechanism and an in-cell retarder with a quarter-wave plate that is used below the LC layer, the transflective LCD using fringe-field switching (FFS) mode is realized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.983-987
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• 2004

We have studied electro-optic characteristics of reflective optically compensated splay (R-OCS) cell. The initial configuration of this cell is in splay form such that a mid director lies parallel to the substrate and around it hybrid structure is formed symmetrically so the optically compensation effect exists. Optimized optical configurations could be achieved by using a single polarizer, a quarter-wave film and a cell with quarter-wane retardation. The optimal cell retardation is 0.34 ${\mu}$m, allowing to have large cell gap. The cell provides high contrast ratio of 80:1 at normal direction and the region with contrast ratio over 5:1 covert up to 160$^{\circ}$ horizontally and vertically at all wavelength range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.411-414
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• 2005

We have developed a transflective liquid crystal display (LCD) with a single cell gap and a low twisted nematic (LTN) mode in combination with a self-integrated retardation layer. The retardation layer was made of UV curable liquid crystalline material in one step of photo masking process and has both the homeotropic and the planar parts. The proposed transflective configuration has advantages in a simple fabrication process, and the possibility for a single driving scheme due to the similarity between the transmittance and the reflectance.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.16-17
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• 2001

광결정(photonic crystal)은 서로 다른 유전체가 규칙적으로 배열되어 있는 구조로서, 빛이 진행할 수 없는 진동수 영역인 광밴드갭(photonic bandgap)이 존재한다. 광밴드갭 특성으로 빛의 자발 방출과 진행 방향이 조절될 수 있기 때문에, 광결정은 나노 레이저, 광도파관, LED(Light Emitting Diode) 등의 광소자 개발에 응용되고 있다. 지금까지 2차원, 3차원의 광결정에 대한 많은 연구가 수행되어 왔으며, 현재에는 2차원의 슬랩(slab) 구조에 대해 활발하게 연구되고 있다. (중략)

• Journal of Life Science
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• v.17 no.11
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• pp.1517-1522
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• 2007

Gap junction channels formed by two adjacent cells allow the passage of small molecules up to ${\sim}\;1\;kDa$ between them. Hemichannel (connexon or half of gap junction) also behaves as a membrane channel like sodium or potassium channels in a single cell membrane. Among 26 types of connexin (Cx), $Cx32^*43E1$ (a chimera in which the first extracellular loop of Cx32 has been replaced with that of Cx43), Cx38, Cx46, and Cx50 form functional hemichannels as well as gap junction channels. Although it is known that Xenopus oocytes express endogenous connexin 38 (Cx38), its biophysical characteristics at single channel level are poorly understood. In this study, we performed single channel recordings from single Xenopus oocytes to acquire the biophysical properties of Cx38 including voltage-dependent gating and permeation (conductance and selectivity). The voltage-dependent fast and slow gatings of Cx38 hemichannel are distinct. Fast gating events occur at positive potentials and their open probabilities are low. In contrast, slow gatings dominate at negative potentials with high open probabilites. Based on hi-ionic experiments, Cx38 hemichannel is anion-selective. It will be interesting to test whether charged amino acid residues in the amino terminus of Cx38 are responsible for voltage gatings and permeation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.724-728
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• 2005

Electro-optic characteristics of reflective hybrid aligned liquid crystal (LC) cell driven by fringe field using a nematic LC with positive dielectric anisotropy have been studied. Optimized optical configurations are achieved by using a single polarizer, half-wave film and a cell with quarter-wave retardation. The simulation results shows an optimum cell retardation of $0.30{\mu}m$. This value may allow a practical cell gap larger than $3{\mu}m$, which makes it easy to control in the manufacturing process. Furthermore, this LC cell with optimized cell parameters shows low wavelength dispersion and the contrast ratio greater than 5 over exists about $100{\circ}$ in vertical direction and $160{\circ}$ in horizontal direction. Also, when using the LC with positive dielectric anisotropy rather than negative dielectric anisotropy, the display shows low power consumption and fast response time.