• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.994-999
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• 2006

For low-cost embedded EEPROM, in this paper, single polysilicon EEPROM and n-channel high-voltage LDMOST device are developed in a $0.25{\mu}m$ standard CMOS logic process. Using these devices developed, the EEPROM chip is fabricated. The fabricated EEPROM chip is composed of 1 Kbit single polysilicon EEPROM away and high voltage driver circuits. The program and erase characteristics of the fabricated EEPROM chip are evaluated using 'STA-EL421C'. The fabricated n-channel high-voltage LDMOST device operation voltage is over 10 V and threshold voltage window between program and erase states of the memory cell is about 2.0 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.618-621
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• 2001

Plate-type $\beta$-FeSi$_2$single crystals were grown using FeSi$_2$, Fe, and Si as starting materials by the chemical transport reaction method. The $\beta$-FeSi$_2$single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the $\beta$-FeSi$_2$ single crystal. The electrical resistivity values was 1.608Ωcm and electron mobility was 3x10$^{-1}$ $\textrm{cm}^2$/V.sec at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.629-633
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• 2001

Electrical properties of the $\alpha$-In$_2$Se$_3$ single crystals grown by use of the Bridgman technique were examined in the transition temperature range between $\alpha$-phase and $\beta$-phase. $\alpha$-In$_2$Se$_3$ single crystal has ' the rhombohedral structure and lattice constants are a=4.025 $\AA$, c=28.771 $\AA$ in c-axis. The transition temperatures of the stoichiometric $\alpha$-In$_2$Se$_3$ single crystal is 198.8$^{\circ}C$ according to the specimens. The temperature of $\alpha$longrightarrow$\beta$ phase transition decreased but the temperature of $\beta$longrightarrow$\alpha$ phase transition increased as the number of heating-cooling cycle increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.787-791
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• 2015

In this paper, the growing orientation of PMN-PT single crystal is analyzed using the Laue-Back Reflection Method. Two kinds of PMN-PT single crystals are grown using the Bridgman growing method in the [001] and [111] directions and their the Laue photographs are simulated assuming cubic crystal systems. From the comparison between simulation and test results, it can be concluded that the single crystals are grown in the desired crystal orientations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.401-402
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• 2008

We proposed a single gap transflective liquid crystal display (LCD) using a vertically aligned (VA) liquid crystal cell and circular polarizer. The conventional VA transflective LCDs have problems that there required several compensation films and voltage-dependent transmittance and reflectance curves do not match each other. To solve these problems, we used circular polarizer and optimized the condition of insulator thickness in the transmissive part and reflective part. Also, we used the patterned vertical alignment (PVA) mode for wide viewing angle in transmissive part. Consequently, this device realized transflective LCD with a single cell gap and single gamma curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.54-57
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• 1992

An electro-optical single modulator is fabricated in X-cut LiNbO$_3$by the annealed proton exchange and self-aligned method. First, the effect of annealing is characterized by examining single optical modulator. It is found that by controlling the annealing time, the single optical modulator can be made widely variable. The on-off state of modulator is performed by annealing process and self-aligned electrodes are used in fabricating the single modulator. The optical single modulator has very good figures of merits : the measured on-off switching voltage of about 2.7V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.54-57
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• 2005

We have designed a single gap transflective liquid crystal display (LCD) driven by a fringe electric field, in which the +LC (${\Delta}{\varepsilon}$=7.4, rubbing angle= $80^{\circ}$) is homogeneously aligned in the initial state. This device is a problem that the voltage-dependent transmittance and reflectance curves do not match each other. Thus a dual driving circuit is required. This study shows that optimization of the rubbing angle in the transmissive and reflective regions solves this problem so that the transflective display with a single cell gap and single gamma curve for reflective and transmissive region is possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.327-327
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• 2007

$LiTaO_3$ single crystal has been studied for surface acoustic wave(SAW) applications. There are two kinds of $LiTaO_3$ single crystals, stoichiometric $LiTaO_3$ (SLT) and congruent $LiTaO_3$ (CLT). These two crystals show quite different dielectrical properties, which might be related with defects in crystals. In this study, we observed the domain boundary of SLT and CLT with scanning nonlinear dielectric microscopy and discussed the stress distribution in $LiTaO_3$ single crystals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.56-61
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• 2023

The characteristics of write discharge were investigated when the conventional driving method with the unipolar sustain voltages, and the single sustain driving method applying the bipolar sustain voltage were applied in an AC plasma display. In the case of having a single sustain waveform, the strength of the write discharge is weakened compared to the conventional driving method during the address period, because the wall charge inside the panel is more dissipated by the lower scanning voltage. In the driving method with a single sustain waveform, the bias voltage of the other electrodes was changed to improve the write discharge characteristics. As a result, the intensity of the discharge was enhanced by 32% and the delay time was shortened by 60 ㎲.

• 한국전기화학회:학술대회논문집
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• 2001.04a
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• pp.39-39
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• 2001