• Korean Chemical Engineering Research
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• 제60권2호
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• pp.267-276
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• 2022

Modelling the energy release performance of energetic material combustion in closed systems is of fundamental importance for aerospace and defense application. In particular, to compensate for the disadvantage of the combustion of single energetic material and maximize the benefits, a method of combusting the mixed energetic materials is used. However, since complicated heat transfer occurs when the energetic material is combusted, it is difficult to theoretically predict the combustion performance. Here, we suggest a theoretical model to estimate the energy release performance of mixed energetic material based on the model for the combustion performance of single energetic material. To confirm the effect of parameters on the model, and to gain insights into the combustion characteristics of the energetic material, we studied parameter analysis on the reaction temperature and the characteristic time scales of energy generation and loss. To validate the model, model predictions for mixed energetic materials are compared to experimental results depending on the amount and type of energetic material. The comparison showed little difference in maximum pressure and the reliability of the model was validated. Finally, we hope that the suggested model can predict the energy release performance of single or mixed energetic material for various types of materials, as well as the energetic materials used for validation.

• Journal of Mechanical Science and Technology
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• 제19권3호
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• pp.802-810
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• 2005

Deformations of single crystals were studied using finite element analysis to investigate the localized modes and the orientation dependence of plastic deformation observed in single crystals. Investigation of mechanical properties of single crystals is closely related with the understanding of deformation processes in single crystals. Localized bands such as shear and kink were studied and the material and geometric characteristics that influence the formation of such localized bands were investigated. Orientation dependence of material behavior in NiAl single crystals was studied by rotating slip directions from 'hard' orientation. The maximum nominal compressed stress in NiAl single crystals was widely ranged depending on the misalignment from 'hard' orientation. As the compression axis was set closer to 'hard' orientation, the maximum nominal compressed stress was rapidly increased and made <100> slips difficult to activate. Therefore, non-<100> slips will be activated instead of <100> slips for 'hard' orientation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.85-86
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• 2006

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.42-42
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• 2010

We have characterized the previously undescribed parameters for engineering the electrical properties of single-walled carbon nanotube (SWCNT) films for technological applications. The surface tension of the top coating passivation material and matching coefficients of thermal expansion for the substrate and carbon nanotube network are two crucial parameters for the fabrication of reliable and highly conductive single-walled carbon nanotube network thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.278-278
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• 2010

We have characterized the previously undescribed parameters for engineering the electrical properties of single-walled carbon nanotube (SWCNT) films for technological applications. The surface tension of the top coating passivation material and matching coefficients of thermal expansion for the substrate and carbon nanotube network are two crucial parameters for the fabrication of reliable and highly conductive single-walled carbon nanotube network thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.96-97
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• 2008

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 420 $^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at 630 $^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van def Pauw method are $9.24\times10^{16}cm^{-3}$ and 295 $cm^2/V{\cdot}s$ at 293 K, respectively.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1068-1071
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• 2007

When a dielectric layer, in-cell retarder (ICR) is formed between electrode and LC layer to get a single gap transflective fringe-field switching (FFS) display, the operating voltage ($V_{op}$) is highly increased due to the thickness of dielectric material. But, we also knew the phenomenon that the increasing rate of Vop is different whether the 1st common electrode was composed of plate type or slit type. In this paper, the common electrode in transmissive part was composed of slit type which had less steepness effect of the Vop and in reflective part was composed of plate type. The rubbing angle of reflective part can be adjusted properly to match the voltage dependent transmittance and reflectance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.435-436
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• 2007

In general, Single gap transflective FFS display has an in-cell retarder (ICR) between reflective electrode and liquid crystal (LC) layer. Therefore, Operating voltage is highly increased due to this thick dielectric material. But, we also knew the phenomenon that the increasing rate of Vop is different whether the 1st common electrode was composed of plate type or slit type. In this paper, the common electrode in transmissive part was composed of slit type which had less steepness effect of the V op and in reflective part was composed of plate type. The rubbing angle of reflective part can be adjusted properly to match the voltage dependent transmittance and reflectance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.112-113
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• 2006

A stoichiometric mixture for $Cdln_2Te_4$ single crystal was prepared from horizontal electric furnace. The $Cdln_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $Cdln_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $Cdln_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $Cdln_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.4750\;eV\;-\;(7.69{\times}\;10^{-3}\;eV)T^2/(T+2147)$.