• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.6 s.360
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• pp.64-70
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• 2007

This paper presents a novel unified DC offset cancellation and I/Q regeneration for five-port junction based direct receivers. It utilizes the symmetry characteristics of the single-frequency continuous-wave (CW) signal, making it possible that the proposed method can be used regardless of carrier phase offset. The proposed method eliminates the additional DC offset cancellation and reduces the I/Q regeneration parameter estimation time. Since the proposed method employs a single-frequency CW signal independent of the modulation scheme, five-port junction based direct receivers can be used for the demodulation of orthogonal frequency-division multiplexing and continuous phase modulation as well as phase shift-keying.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.275-279
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• 2016

This is a brief review on light trapping in Si based thin film solar cells with textured surfaces and transparent conducting oxide front electrodes. The light trapping scheme appears to be essential in improving device efficiency over 10%. As light absorption in a thin film solar cells is not sufficient, light trapping becomes necessary to be effectively implemented with a textured surface. Surface texturing helps in the light trapping, and thereby raises short circuit current density and its efficiency. Such a scheme can be adapted to single junction as well as tandem solar cell, amorphous or micro-crystalline devices. A tandem cell is expected to have superior performance in comparison to a single junction cell and random surface textures appears to be preferable to a periodic structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1804-1809
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• 2006

The aim of this Paper is to describe the implementation of a low-power digital front-End Design (FED) that will act as the core of a stand-alone Power dissipation methodology. The design of digital integrated circuits is a large and diverse area, and we have chosen to focus on low power FED. Designs are made from synthesized logic, and we need to consider the low power digital FED including input clock, buffer, latches, voltage regulator, and capacitance-to-voltage counter which have been integrated onto hish bandwidth communication chips and system. These single- chip micro instruments, implemented in a 0.12um CMOS technology operate with a single 0.9V supply voltage, and can be used to monitor dynamic and static power dissipation, Vesture, acceleration junction temperature (Tj), etc.

• Progress in Superconductivity
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• v.4 no.2
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• pp.109-113
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• 2003

We have developed a planar-type single layer second-order $high-T_{c}$ SQUID gradiometer, which can detect the $d^2$$B_{z/}$dxdy of the second-order field gradient. This SQUID gradiometer consists of four-way 'clover-leaf' pick-up loops and is coupled directly to a 4-junction dc SQUID in such a way that the coupling polarity of the two diagonal loops is opposite to that of the other two loops. The pickup loops are intrinsically balanced for both uniform field and the 1 st-order field gradient. The $YBa_2$$Cu_3$$O_{7}$ thin film was made by pulsed laser deposition method on $SrTiO_3$ single crystal substrate and patterned by photolithography with Ar ion milling technique. Response of this gradiometer was tested for both uniform field and the 2nd-order field gradient. Details of the design, fabrication, and results will be discussed.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.87-90
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• 1999

We have studied the annealing effects of 570 (SrTiO$_3$) single crystal substrate and the I-V properties of step-edge junctions after Ar ion milling. YBa$_2Cu_3O_7$ (YBCO) thin films are fabricated on the substrates by using pulsed laser deposition (PLD) and photolithography. The surface of Ar ion milled substrate was characterized with atomic force microscope (AFM) and scanning electron microscope (SEM) images. After the substrate was damaged by milling, the critical current density of YBCO thin films deposited on the substrate was lowered. The annealing of the damaged substrate at about 1000 $^{\circ}C$ recovered the critical current density to that before the milling. Futhermore the annealing helped junction formation due to high quality film and increased the yield rate for the fabrication of high quality step-edge junction.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.146-150
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• 2000

Two methods have been investigated to fabricate good quality step-edge Josephson junctions on STO, MgO, and LAO single crystal substrates. One is the annealing of substrates at 1050$^{\circ}$C in 1 atmospheric oxygen after Ar-ion milling. The other is the cleaning of step-edge by using Ar ion milling. The step-edge is characterized with atomic force microscope (AFM) images. And YBCO thin films are deposited by using pulsed laser. The I-V properties of step-edge junctions are characterized. The yield rate of step-edge junction is increased by new fabrication methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.429-429
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• 2012

본 연구에서는 분자선 박막 성장법(MBE)으로 성장된 GaAs single junction solar cell의 광학적 특성 변화를 photoreflectance (PR)을 이용하여 연구하였다. 본 연구에 사용된 태양전지 구조는 n+-GaAs (100)기판 위에 n+-GaAs buffer를 200 nm 성장 후 그 위에 i-GaAs 250 nm와 p+-GaAs 200 nm 성장 하였다. 상온에서 PR 측정 결과, 변조빔 세기가 증가할수록 Franz-Keldysh oscillation (FKO)의 주파수가 증가하는 현상이 관측되었다. 이는 변조빔의 세기가 강해질수록 광케리어수의 증가로 인한 스크리닝 효과에 기인한 것으로 사료된다. 아울러 Fast Fourier transform (FFT) 결과, 변조빔의 세기가 약할 때는 세 개의 주된 피크가 나타났으며, 이러한 현상은 GaAs에서 가전자대의 heavy hole (HH)과 light hole (LH)의 전이로 인해 나타나는 FKO 신호가 중첩되어 HH과 LH 피크가 HH과 HH-,LH과 LH-로 나뉘어진 것으로 사료된다. 여기광의 세기가 $1.40mW/cm^2$ 이상일 때는 주된 세 개 피크 이외에 부가적인 피크가 상대적으로 고 주파수 영역에서 관측되었다. 이러한 고주파수 영역에서의 나타나는 FKO 주파수는 시료의 내부전기장이 여기광의 세기가 증가할수록 감소하는 결과로 사료된다.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2009.10a
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• pp.855-863
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• 2009

In this study, a beam-column junction type damper is proposed which saves the inner and outer space for the installation of damping devices and allows easy adjustment of control performance The result of the numerical analysis indicated that the displacement response and base shear of a single degree of freedom system by seismic load, El Centro 1940 was reduced with yield moment of the joint hinge and the specific yield moment ratio $\delta$ of the joint hinge existed for the optimal seismic performance. In addition, the dynamic nonlinear characteristics, effects of yielding and dependence of natural period of bi-linear system with the junction type damper is identified. The analysis of multi-degree of freedom system showed that responses of the controlled structures was reduced significantly as the number of a story increases and yield moment ratio decreases when the system is excited by seismic load and sine wave. On top of that, it was also observed that energy dissipation at the joint connected with the dampers was remarkable during excitation.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.43-48
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• 2012

This paper presents an iterative single-frequency continuous-wave signal-based I/Q regeneration method for improving image-rejection performance of multi-port junction-based direct receivers (MPDRs). This paper analyzes I/Q regeneration in MPDRs as I/Q mismatch compensation for direct conversion receivers. Based on the analysis, this paper evaluates the accuracy of I/Q regeneration in terms of the image-rejection ratio (IRR). The proposed method improves the IRR performance more than 20 dB compared to existing I/Q regeneration methods. Simulation results show that MPDRs using the proposed method can achieve an IRR of more than 70 dB, and that the bit error rate performances are almost the same as those of conventional coherent demodulators, even in fading channels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.