• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.1
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• pp.61-69
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• 2005

The topology of NPC inverter coupled with the large number of devices used increases the probability of device failure. It's necessary to develop an optimal remedial strategy which can be used to continue the application when fault occurs. The fault tolerance is obtained by the use of the proposed method. The proposed method utilizes that the one phase load with the failed power device could be connected to the center-tap of the DC-link capacitor in order to dc-link voltage with balance and the sinusoidal phase current with constant amplitude under the single power device fault condition. The strategy described in this paper is expected to provide an economic alternative to more expensive redundancy techniques.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.199.1-199.1
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• 2008

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1039-1044
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• 2005

A Multi-channel serial device using the embedded Linux system is designed for a remote controlling and monitoring system. The proposed device consists of a FIFO, a state machine, and an interrupter. The device program written in embedded Linux enables the effective programming of device. While the conventional multi-channel serial devices accesses every individual serial devices, the proposed device accesses the multi-channel serial device as if it is a single serial device. The device efficiently performs the multi-channel serial input/output operation and has fast access time than the conventional multi-channel serial device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.16-21
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• 2008

This paper introduces a new type of Hopfield neural network using newly developed single-electron devices. In the electrical model of the Hopfield neural network, a single-electron synapse, used as a voltage(or current)-variable resistor, and two stages of single-electron inverters, used as a nonlinear activation function, are simulated with a single-electron circuit simulator using Monte-Carlo method to verily their operation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.131-139
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• 1996

Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.237-241
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• 2005

We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.740-745
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• 2014

ZnO nanowires were grown by hydrothermal synthesis process and piezoelectric poly vinylidene fluoride (PVDF) was then coated on top of the ZnO-nanowires by spray-coating technique. The composite layer of ZnO-nanowires/PVDF was applied to an energy harvesting device based on piezoelectric-conversion mechanism. A defined mechanical force was given to the nanogenerator device to evaluate their electric power generation characteristics, where output current density and voltage were examined. Electric power generation property of the ZnO-nanowires/PVDF based nanogenerator device was compared to that of the nanogenerator device with ZnO-nanowires as single active layer. Effect of the ZnO-nanowires on improvement of power generation was discussed to examine its feasibility for the nanogenerator device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.279-281
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• 1996

This paper deals with the two stage surge protection device by using varistor and LC low pass filter. Recently varistor alone has been used with overvoltage protection devices for the AC power mains and has same problems associated with high remnant voltage and noise. In this work, in order to improve the cutoff performance of surge protection device, the lightning surge protection device having two stage hybrid circuit for an AC single phase mains was designed and fabricated. Operation characteristics and surge clamping performance of the surge protection device in an $8/20{\mu}s$ surge current are investigated. As a consequence, it is found that the proposed two stage surge protective device for AC power mains has a variety of advantages such as a smaller clamping voltage, high frequency noise reduction and large clamping capacity.

• Bulletin of the Korean Chemical Society
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• v.19 no.3
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• pp.332-335
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• 1998

An alternating copolymer of PPV and PTV, poly[2-methoxy-5-(3,7-dimethyl)octyloxy-1,4-phenylenevinylene-alt-2,5-thienylenevinylene] (DAPPV-PTV) has been synthesized and light-emitting properties of the polymer have been studied. A single layer EL device using DAPPV-PTV as an emitting layer between ITO and Al electrodes (ITO/DAPPV-PTV/Al) has been fabricated, and light emission of the device becomes visible at 3 V. The EL emission maximum of the device is about 620 nm. Double layer EL device using DAPPV-PTV and Alq3 (ITO/DAPPV-PTV/Alq3/Al) has also been fabricated. The double layer EL device shows two-color emission depending on the applied voltage. The device emits a pale green color from 8 V, and then the color turns to red at about 18 V.