• Title/Summary/Keyword: Single Device

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A Study on the single crystal growth of the optic-grade $LiTaO_3$ as a electro-optic materials

  • Kim, B.k.;J.K. Yoon
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.526-526
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    • 1996
  • The single crystal of LiTaO3 is well known eletro-optic material as well as the piezoelectric one applied to SAW filter. LiTaO3 has large electro-optic effects, so applied to optical switch, acosto-optic deflector, and optical memory device using photorefractive effects. The crystal growth of SAW-grade LiTaO3 has been studied many aspects, but there is no detail research about optic-grade crystal growth. The conditions of optic-grade LiTaO3 single crystal are as below. The optical transmittance must be over 75%, and axial and radial concentratiom uniformity below 1%. The variation of Curie temperature depending on Li/Ta ratio must be also below 2$^{\circ}C$ and no internal no internal cracks and defects. Because of the limitation of crystal quality, the growing of optic-grade LiTaO3 single crystal is very difficult compared with the growing of SAW-grade. In this research, upper conditions of optic-grade single crystal was investigated after growing of 1 inch diameter and 1.5 inch length LiTaO3 single crystal having no internal cracks and defects using Czochralski method. Curie temperature was determined with DSC and measuring capacitance and lattice parameter was calculated about the grown crystal and ceramic powder samples of various Li/Ta ratio. The result of Tc variation was below 1.2$^{\circ}C$ all over the grown crystal, so it is confirmed that LiTaO3 was grown under congruent melting composition having optical homogeniety. Also, the optical transmittance was about 78%, which was sufficient for optical device.

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A Equivalent Modeling of AC Powder Electroluminescent Device (교류 구동형 후막 전계발광소자의 등가 모델링)

  • Lee, Jong-Chan;Jung, Byung-Sun;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1797-1799
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    • 1999
  • In this paper, to implement the electrical equivalent modeling of powder electroluminescent device, capacitate equation of device was chosen. The conventional structure device which have dielectric and phosphor layer between electrodes, and the single emission structure device which means that dielectric and phosphor were mixed between electrodes, were investigated. As a result, It was possible to make the equation that is transferred capacitance to phosphor layer, and using measured brightness efficiency and conductivity of devices was calculated.

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Improving Device Efficiency for n-i-p Type Solar Cells with Various Optimized Active Layers

  • Iftiquar, Sk Md;Yi, Junsin
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.70-73
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    • 2017
  • We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

The Study on the Actual Examination of the Bidirectional Protection Device in the 22.9[kV] Distribution Power System Interconnected with the DG (분산전원이 연결된 22.9[kV] 배전계통의 양방향 보호기기 실증시험 연구)

  • Lee, Heung-Jae;Choi, Myeong-Ho
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.10
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    • pp.102-108
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    • 2011
  • The existing power flow has a single direction to the line end but the bidirectional power flow will possibly occur depending on the output capacity in the 22.9[kV] distribution power system connected with the dispersed generation(DG). So these characteristics would influence the power system management. The DG have many advantages such as assistance source, Load share etc. So the utility must apply the bidirectional protection system so as to maximize an advantage of DG. This paper describes the field test case of bidirectional protective device in order to investigate the device performance when applied to bidirectional power system. We have tested in the power system test site of KEPCO and these tests provide the basis for performance verification test of bidirectional protective device in the power system.

Study on Power Device Using Solar Collector (태양열집열기를 이용한 발전장치 연구)

  • Chun, Taekyu;Yang, Youngjoon
    • New & Renewable Energy
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    • v.10 no.4
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    • pp.22-28
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    • 2014
  • The thermoelectric generator using solar heat was applied to the device (heat-electricity conversion device) to produce small-scale electricity. The purpose of this study was to investigate the characteristics and performance of the device, which equipped with heat pipe as heat source. The experimental results showed that efficiency of circular single evacuated solar collector was higher 2.7 times than that of rectangular solar collector. Furthermore maximum power of 5 watt was obtained when 2 devices with series array were used and it could be more improved by increasing the number of device or measurement time.

Electrical Switching Characteristics of Thin Film Transistor with Amorphous Chalcogenide Channel

  • Nam, Gi-Hyeon;Kim, Jang-Han;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.280-281
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    • 2011
  • We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

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A Protective Effectiveness Measure for Distribution Systems (배전계통 보호시스템의 보호능력의 평가방법)

  • 현승호;이승재;임성일;최인선;신재항;최면송
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.53 no.5
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    • pp.249-256
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    • 2004
  • This paper suggests a novel evaluation scheme of protective effectiveness in distribution systems. The adequacy of every parameter in a protective device is evaluated for the setting or correction rules. Then, the protective effectiveness of a device, device-wise effectiveness, is obtained by the combination of the parametric evaluation results. The coordination-wise effectiveness between devices can be calculated by evaluating the parameters which contribute the performance of coordination. The protective effectiveness of the whole system can be obtained by combining the device-wise and coordination-wise effectiveness values. The rules, in this paper, are categorized into three groups; rules for single parameter, rules for coordination between parameters, and rules for coordination between protective devices to form a hierarchical calculation model. The proposed method is applied to a typical distribution network to show its effectiveness.

Spin Transport in a Ferromagnet/Semiconductor/Ferromagnet Structure: a Spin Transistor

  • Lee, W.Y;Bland, J.A.C
    • Journal of Magnetics
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    • v.7 no.1
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    • pp.4-8
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    • 2002
  • The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

Thermal Burn Injury from a Forced-Air Warming Device in an Anesthetized Dog with Peripheral Hypoperfusion

  • Lee, Sungin;Lee, Aeri;Lee, Maro;Kim, Wan Hee
    • Journal of Veterinary Clinics
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    • v.37 no.6
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    • pp.331-335
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    • 2020
  • A 13-year-old female Poodle presented with gallbladder rupture caused by a mucocele and hypoperfusion. The animal had a thermal burn injury caused by a forced-air warming device used for hypothermia during surgery. This could be attributed to two causes. First, the forced-air warming device was used with direct hosing, without attachment to an air blanket, and the heat was concentrated in a single area. Second, perioperative peripheral hypoperfusion hampered heat dissipation and increased the susceptibility to a burn injury. These findings suggest that an air blanket should be used with a forced-air warming device according to the manufacturer's instructions. Furthermore, patients with peripheral hypoperfusion are at a higher risk of burn injuries and require close monitoring.

Some Characteristics of Their Family Functions Perceived by Mothers and Children of Single-Mothers (모자가족의 어머니와 자녀가 지각한 가족기능의 특성)

  • Kwon, Bok-Soon
    • Korean Journal of Social Welfare
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    • v.40
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    • pp.5-37
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    • 2000
  • The purpose of this study is to find out some characteristics of the family functions of single mothers to provide some useful data for the development of programs which may help single mothers to improve their family functions. The McMaster Family Assessment Device (FAD) which is composed of problem solving function (PS), communication function (CF), role function (RC), emotional reaction function (ER), emotional involvement (EI), behavioral control function (BC), and general function (GC) and McCubbins' FSI were administered to single mothers and their adolescent children and mothers and their adolescent children of ordinary families (control family). The single mothers' perception of their family function was lower than that of control family mothers in an the 7 categories of FAD. The perceptions of the family function of the single mothers' children were lower than those of control family mothers' children. There was on significant difference between the perceptions of single mothers and their children in PS, ER, EI, GC of their family. However, single mothers' perception in RC and BC was lower than that of their children, and the children's perception in CF were lower than that of their mothers. Single mothers who fall on the period of single motherhood was shorter than 7 years perceived their families' function as lower than that of single mothers' who fall on the periods of single motherhood longer than 7 years in all categories. Generally speaking, the single mothers' family functions were lower than that of control family. The different characteristics of each single mother's family functions should be considered in developing programs for single mothers.

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