• 한국진공학회지
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• 제18권1호
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• pp.15-23
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• 2009

깨끗한 Si(100)-$2{\times}1$, D를 먼저 흡착시킨 Si(100)-$2{\times}1$, 그리고 이온 빔에 의해 원자 수준으로 거칠어진 Si(100) 등의 세 가지 표면에 각각 $Si_2H_6$의 흡착시켜 포화 실릴($-SiH_3(a)$) 흡착층을 형성시키고 실험적으로 비교 고찰하였다 전구체 흡착 거동(기작)과 함께 $Si_2H_6$의 표면 분해(화학)흡착 반응성은 개질을 시켜주지 않은 깨끗한 Si(100)-$2{\times}l$ 표면에서 가장 크게 나타났다. 이 결과는 화학흡착 반응 즉, $H_3Si-SiH_3$ 결합 분해와 두 개의 Si-$SiH_6(a)$ 표면결합 형성이 표면의 Dangling Bond Pair 상에서 동시적으로(Concertedly) 일어나는 $Si_2H_6$의 분해흡착 기작으로 설명될 수 있었다. 또한 Si(100)-$2{\times}l$ 표면에 흡착된 $-SiH_3(a)$의 매우 논은 열적 안정성은 ${\sim}0.9\;ML$나 되는 표면 덮힘도와 함께 실릴기로 조밀하게 흡착된 표면에 Dangling Bond가 존재하지 않는 것에 의한 것으로 밝혀졌다.

• Journal of Photoscience
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• 제9권1호
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• pp.17-22
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• 2002

Studies have been conducted to explore photoaddition reactions of N-methylthiophthalimide with $\alpha$-silyl-n-electron donors Et$_2$NCH$_2$SiMe$_3$, n-PrSCH$_2$SiMe$_3$ and EtOCH$_2$SiMe$_3$. Photoaddition of $\alpha$-silyl amine Et$_2$NCH$_2$SiMe$_3$ to N-methylthiophthalimide occurs in $CH_3$CN and benzene to produce non-silicon containing adduct in which thiophthalimide thione carbon is bonded to $\alpha$-carbon of $\alpha$-silyl amine in place of the trimethylsilyl group. In contrast, photoaddition of EtOCH$_2$SiMe$_3$ to N-methylthiophthalimide generates two diastereomeric adducts in which thiophthalimide thione carbon is connected to $\alpha$-carbon of $\alpha$-silyl ether in place of u-hydrogen. Based on a consideration of the oxidation potentials of u-silyl-n-electron donors and the nature of photoadducts, mechanism for these photoadditions involving single electron transfer(SET) -desilylation and H atom abstraction pathways are proposed.

• 대한화학회지
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• 제60권2호
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• pp.149-153
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• 2016

• Bulletin of the Korean Chemical Society
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• 제21권10호
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• pp.959-968
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• 2000

Direct reaction of elemental silicon with a mixture of (dichloromethyl)silanes 1 $[Cl_3-nMenSiCHCl_2:$ n = 0 (a), n = 1(b), n = 2(c), n = 3(d)] and hydrogen chloride has been studied in the presence of copper catalyst using a stirred bed reactor equ ipped with a spiral band agitator at various temperatures from $240^{\circ}C$ to $340^{\circ}C.$ Tris(si-lyl) methanes with Si-H bonds, 3a-d $[Cl_3-nMenSiCH(SiHCl_2)_2]$, and 4a-d $[Cl_3-nMenSiCH(SiHCl_2)(SiCl_3)]$, were obtained as the major products and tris(silyl)methanes having no Si-H bond, 5a-d $[Cl_3-nMenSiCH(SiCl_3)_2]$, as the minor product along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with chloromethylsilane formed by the decomposition of 1. In addition to those products, trichlorosilane and tetra-chlorosilane were produced by the reaction of elemental silicon with hydrogen chloride. The decomposition of 1 was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to 1. Cad-mium was a good promoter for and the optimum temperature for this direct synthesis was $280^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제23권6호
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• pp.845-851
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• 2002

The synthesis of the intramolecular donor - stabilized silyl and germyl complexes of the type ($Cab^c.p) MMe_2X$ (2a:M=Si, X=Cl;2b;M= Ge, X=Cl;2e;M=Si,X=H) was achieved by the reaction of $LiCab^c,p$ (1) with $Me_2SiClX$ and $Me_2GeCl_2$ respectively. The intramolecular M←P interacion in 2a-2c is provided by $^1H$, $13^C.$, $31^P$ and $29^Si$ NMR spectroscopy. The salt elimination reactions of dichlorotetramethyldisilane and -digermane with 1 afforded the $bis(\sigma-carboranylphosphino)disilane$ and disgermane [$(Cab^C.P)MMe_2]_2(4a;M$ = Si;4b: M=Ge). The oxidative addition reaction of 4a-4b with $pd_2(dba)_3CHCl_3afforded$ the bis(silyl)-and bis(germyl)-palladium complexes. The chloro-bridged dipalladium complexes were obtained by the reaction of 2a-2b with $pd_2(dba)_3CHCl_3$ The crystal structures of 5a and 7b were determined by X-ray structural studies.

• 한국진공학회지
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• 제6권S1호
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• pp.59-65
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• 1997

Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product $SiH_4$(g) upon H atom bombardment resulting from direct abstraction of $SiH_3$(a) by impinging H atoms was detected with a quadrupole mass spectrometer over the substrate temperature range of 105-408 K Facile depletion of all surface silyl ($SiH_3$) groups the dissociative adsorption product of disilane ($Si_2H_6$) at 105K from Si(100)2$\times$1 by D atoms and continuous regeneration and removal of $SiD_3$(a) were all consumed. These results provide direct evidence for efficient silicon surface etching by thermal hydrogen bombardment at cryogenic temperatures as low as 105K We attribute the high etching efficiency to the formation and stability of $SiH_3$(a) on Si(100) at lowered surface temperatures allowing the $SiH_3$(a) abstraction reaction by additional H atom to produce $SiH_4$((g).

• Bulletin of the Korean Chemical Society
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• 제22권12호
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• pp.1337-1340
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• 2001

The bulk photopolymerization of methyl methacrylate (MMA) with para-substituted phenylsilanes such as F-C6H4SiH3 (1), H3C-C6H4SiH3 (2), and H3CO-C6H4SiH3 (3) was performed to produce poly(MMA)s containing the respective silyl moiety as an end group. For all the hydrosilanes, the polymerization yields and the polymer molecular weights decreased, whereas the TGA residue yields and the relative intensities of Si-H IR stretching bands increased as the relative silane concentration over MMA increased. The polymerization yields and polymer molecular weights of MMA with 1-3 increased in the order of 3 < 1 < 2. These hydrosilanes influence significantly upon the photopolymerization of MMA as both chain-initiation and chain-transfer agents.

• Elastomers and Composites
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• 제44권2호
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• pp.150-155
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• 2009

본 연구는 폴리비닐실록산 치과용 고무인상재의 조성에서 실리콘 프리폴리머 내 비닐그룹에 대한 가교제내 Si-H 그룹의 함량비 차이가 물성에 미치는 영향을 평가하였다. SiH/Vinyl 비가 1.6으로 가교제 함량이 낮은 $\underline{C6}$군(Cross-linker $\underline{6}$ parts 함유)은 인장강도가 실험군 중 가장 높았으나 경화속도가 너무 느렸고, SiH/Vinyl 비가 3.2인 C12군은 기계적 성질은 좋았으나 경화가 너무 빠르게 진행되어 조작이 용이하지 않은 단점을 보였다. 그러나 C14군은 가교제 함량이 더 낮은 실험군들에 비해 낮은 인장강도를 보였으며, C16군은 경화반응이 오히려 더 지연됨을 보여 과다한 가교제 첨가는 기계적 성질과 조작성에 불리한 영향을 미침을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제21권3호
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• pp.291-294
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• 2000

The bulk photopolymerization of methyl methacrylate(MMA) with bis(silane)s such as 1,4-$C_6H_4(SiH_3)_2$ (1) and 1,4-$C_6H_4(SiH_2Me)_2$ (2) was performed to produce poly(MMA)s possessing the corresponding bis(silyl) moiety as an end group. For the bis(silane)s, while the polymerizaiton yields and the polymer molecular weights decreased, the TGA residue yields and the relative intensities of Si-H IR stretching bands increased as the relative bis(silane) concentration over MMA increased. The polymerizaion yield, polymer molecular weight, and TGA residue yield of MMA with 1 were found to be higher than those with 2. The bis(silane)s appears to influence significantly upon the photopolymerization of MMA as both chain initiation and chain transfer agents.

• Bulletin of the Korean Chemical Society
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• 제16권11호
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• pp.1109-1112
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• 1995

Bis(silyl)alkylbenzenes such as bis(1-sila-sec-butyl)benzene (1) and 2-phenyl-1,3-disilapropane (2) were prepared in high yields by reduction of the corresponding chlorosilanes with LiAlH4. The dehydropolymerization of 1 and 2 was carried out with group 4 metallocene complexes generated in situ from Cp2MCl2/Red-Al and Cp2MCl2/n-BuLi (M=Ti, Hf), producing two phases of polymers. The TGA residue yields of the insoluble polymers were in the range of 64-74%. The molecular weights of the soluble polymers produced ranged from 700 to 5000 (Mw vs polystyrene) and from 500 to 900 (Mn vs polystyrene). The dehydropolymerization of 1 and 2 seemed to initially produce a low-molecular-weight polymer, which then underwent an extensive cross-linking reaction of backbone Si-H bonds, leading to an insoluble polymer.