• Tribology and Lubricants
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• v.24 no.4
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• pp.163-169
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• 2008

Tribological properties of ceramic brake discs were investigated using a commercial friction material. The discs were manufactured by liquid silicon infiltration (LSI) into a C-C preform. The disc surface was modified by two different methods, producing sliding surfaces with chopped carbon fibers and carbon felt. In addition, the composition of the surface was also changed. Friction characteristics of the discs were examined using a 1/5 scale dynamometer. Results showed that the type and composition of the disc surface significantly affected the level of braking effectiveness and high temperature brake performance. The discs with felt surfaces showed higher friction levels than those with chopped fiber surfaces and SiC tended to increase the friction level while C lowered the friction coefficient. The ceramic disc was more sensitive to the deceleration rate than gray iron, showing high speed sensitivity.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.56-62
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• 2015

Using an optical 3D scanning device to collect data from a diffused reflection surface is very difficult. To solve this problem, there are many applications including a spray-type developer and silicon molds. However, using a developer can cause chemical reactions between objects and particles of the developer and uneven surfaces on the object. To overcome these problems, we suggest an electrostatic powder coating method for even coating of particles onto surfaces for collecting 3D shape data. We have developed an automatic, electrostatic powder-coating machine and performed three different experiments to compare this system with a laser interferometer and a T-scan 3D scanner. As a result, we could ascertain the various characteristics of this new method, including good sensitivity for the various surface states of the bare surface, developer, and electrostatic powder coating. Finally, we verified the outstanding scanning performance and were able to demonstrate that this method achieves quality than traditional methods.

• Restorative Dentistry and Endodontics
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• v.15 no.1
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• pp.67-80
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• 1990

This study was performed for elucidating the effects on surface polishing of composite resins. In this study, Silux(microfilled), Graft(hybrid), Bisfil- I (hybrid posterior) and Hi-pol(conventional) were used. Sixty specimens were made with 4 brands of composite resins and Optilux system in $2.0{\times}1.3{\times}1.0cm$ resin block which has a cavity with 0.5cm diameter and 0.5cm depth. Polishing was done with #600 sand paper and Soflex, Super-snap, Micron finishing system, or Composite polishing kit. Final polished surfaces were measured by roughness tester(Kasaka Lab. Ltd., Japan) and image analyser(Omnimet Image Analyser, Buehler, USA). The results were as follows, 1. The celluloid strip produced the smoothest surfaces. 2. Light curing microfilled composite resin, Silux, had smoother surface than any others. 3. The surfaces polished by Soflex were smoothest. 4. Aluminum oxide disk, Soflex and Super-Snap, made smoother surface than diamond bur, M.F.S., or silicon point, Composite polishing kit. 5. The roughness values of surface polished by M.F.S. composed of diamond burs, were less than those of Composite polishing kit made from silicone points.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.319-320
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• 2007

We report on the fabrication of two-dimensional Silicon On Insulator (SOI) photonic crystal (PhC) superprism. To optimize the design of 2-D SOI PhC superprism, the photonic band structures (TE-polarization) for triangular lattices and the dispersion surfaces were calculated and analyzed by the plane wave expansion method. Dense 2-D SOI PhC superprism nanostructures with taper input and output waveguide microstructures were successfully fabricated by nanoimprint lithography, followed by inductively coupled plasma (ICP) etching.

• KSTLE International Journal
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• v.1 no.1
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• pp.52-58
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• 2000

The velocity and motion of single air bubbles rising through lubricant have been experimentally investigated to test the effect of silicon defoamant The investigation reveals that the velocity is markedly retarded by the addition of small amount of silicone defoamant. This retardation of rising velocity of air bubbles is proposed by increasing of Drag force or reducing of Buoyancy force around the surfaces of the bubbles.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.5
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• pp.150-156
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• 2009

The removal of tiny particles adhered to surfaces is one of the crucial prerequisite for a further increase in IC fabrication, large area displays and for the process in nanotechnology. Various cleaning techniques (wet chemical cleaning, scrubbing, pressurized jets and ultrasonic processes) currently used to clean critical surfaces are limited to removal of micrometer-sized particles. Therefore the removal of sub-micron sized particles from silicon wafers is of great interest. For this purpose various cleaning methods are currently under investigation. In this paper, we report on experiments on the cleaning effect of 100nm sized fluorescence particles on silicon wafer using the plasma shockwave occurred by femtosecond laser. The plasma shockwave is main effect of femtosecond laser cleaning to remove particles. The removal efficiency was dependent on the gap distance between laser focus and surface but in some case surface was damaged by excessive laser intensity. These experiments demonstrate the feasibility of femtosecond laser cleaning using 100nm size fluorescence particles on wafer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.694-696
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• 2010

We have synthesized boron (or phosphorous) doped silicon nanoparticles (Si-NPs) by a solution process. The surfaces of the Si-NPs were terminated with various alkyl groups to form a protecting layer. The Si-NPs were characterized by UV-Vis, PL, FTIR, and NMR. Through a microwave sintering process, the crystalline thin films of the Si-NPs were prepared by removing the surface alkyl groups. The TEM and SEM images reveal that contiguous films as large as $200{\mu}m$ in diameter were formed with a cubic structure. The electrical conductivity of the Si film was controlled by a doping type.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.267-274
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• 1997

Silicon shallow trenches applied to the STI (Shallow Trench Isolation) of integrated circuits were etched using inductively coupled $Cl_2$ and HBr/$Cl_2$ plasmas and the effects of process parameters on the etch profiles of silicon trenches and the physical damages on the trench sidewall and bottom were investigated. The increase of inductive power and bias voltage in $Cl_2$ and HBr/$Cl_2$ plasmas increased polysilicon etch rates in general, but reduced the etch selectivities over nitride. In case of $Cl_2$ plasma, low inductive power and high bias voltage showed an anisotropic trench etch profile, and also the addition of oxygen or nitrogen to chlorine increased the etch anisotropy. The use of pure HBr showed a positively angled etch profile and the addition of $Cl_2$ to HBr improved the etch profile more anisotropically. HRTEM study showed physical defects formed on the silicon trench surfaces etched in $Cl_2/N_2$ or HBr/ $Cl_2$ plasmas.

• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1822-1828
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• 2004

Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. -0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near -1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxidecovered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogenterminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions.