• 한국결정성장학회지
• /
• 제20권2호
• /
• pp.101-105
• /
• 2010

플라즈마 에쳐 내에 사용되는 실리콘 전극과 링 부품은 사용 중에 강한 플라즈마와 접촉하면서 주기적인 가열과 냉각 과정을 거친다. 이 때 부품의 표면에서는 열 응력으로 인하여 PSB라고 하는 띠 형상의 결함이 생성되며 이로 인하여 그 수명을 다하게 된다. 원료인 실리콘 잉곳의 관점에서 그 수명에 미치는 인자를 살펴보았다. 잉곳의 등급, 즉 S/F와 S/A에 따라 불순물과 결함의 농도를 GDMS와 ${\mu}$-PCD로 평가하여 잉곳의 어떤 요소들에 의하여 수명이 결정되는가를 분석하였다. 그 결과, {001} 면상에서 관찰되는 <110> 방향의 면 결함들이 PSB와 연결될 가능성이 있음을 제안하였다.

• 한국진공학회지
• /
• 제11권4호
• /
• pp.249-255
• /
• 2002

이방성 습식 식각기술을 이용하여 멤버레인을 제작하기 위하여 KOH 용액 및 KOH-IPA 혼합용액을 사용하여 단결정 실리콘 기판을 식각하였다. 단결정 실리콘의 식각속도는 식각 용액의 온도와 농도에 좌우되었으며, 식각 용액의 농도에 따라 식각 형태와 패턴 형성 방향이 달라짐도 관찰되었다. 식각을 위한 표면패턴은 실리콘웨이퍼의 primary flat에 $45^{\circ}$로 기울여 형성되었으며 KOH의 농도가 20 wt%로 유지되었을 때, 식각 용액의 온도 $80^{\circ}C$ 이상에서는 U-groove, $80^{\circ}C$ 이하의 온도에서는 V-groove 식각 형태가 형성되었다. 각 면에 대한 식각속도 차이에 의해서 생기는 hillock은 온도와 농도가 높아짐에 따라 현저하게 줄어들었다.

• 대한기계학회논문집
• /
• 제17권6호
• /
• pp.1441-1455
• /
• 1993

본 연구에서는 최신기법에 의해서 제조된 HIP제 질화규소와 지르코니아를 실험재료로 하여 무윤활하에서의 미끄럼마찰·마멸실험을 수행하여 마찰·마멸특성을 규명하고, SEM을 이용한 마멸면의 미시적 관찰을 통해서 세라믹의 마멸기구를 조사하 여 세라믹마멸기구의 마멸모델을 제시하고자 한다. 제시된 마멸모델에서 파괴역학을 도입하여 이론해석과 고찰을 수행하여 보다 실용적인 세라믹의 마멸율울 평가할 수 있 는 새로운 무차원 파라메터를 제안하고자 한다.

• 한국전기전자재료학회논문지
• /
• 제21권2호
• /
• pp.99-103
• /
• 2008

To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controlling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400 nm to 1000 nm) reflectance with acid texturing is 4.64 % less than alkali texturing.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.16-17
• /
• 2007

To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400nm to 1000nm) reflectance with acid texturing is 4.64% less than alkali texturing.

• 대한금속재료학회지
• /
• 제49권11호
• /
• pp.905-909
• /
• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (${\leq}30{\Omega}/sq$) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel silicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a $2{\times}2cm^2$, Cz wafer.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 G
• /
• pp.3310-3312
• /
• 1999

We have studied the method of silicon direct bonding using the mixture of $HNO_$, $H_2O_2$, and HF chemicals called the controlled slight etch (CSE) solution for the effective wafer cleaning. CSE, two combinations of oxidizing and etching agents, have been used to clean the silicon surfaces prior to wafer bonding. Two wafers of silicon and silicon dioxide were contacted each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in $N_2$ ambient for 2.5 h. We have cleaned silicon wafers with the various HF concentrations and characterized the parameters with regard to surface roughness, chemical nature, chemical oxide thickness, and bonding energy. It was observed that the chemical oxide thickness on silicon wafer decreased with increasing HF concentrations. The initial interfacial energy and final energy postannealed at $1100^{\circ}C$ for 2.5h measured by the crack propagation method was 122 $mJ/m^2$ and 2.96 $mJ/m^2$, respectively.

• 한국주조공학회지
• /
• 제15권6호
• /
• pp.574-587
• /
• 1995

The $SiC_p-reinforced$ preforms fabricated by spray casting process were hot-extruded and subsequently T6-treated, and the morphology of the silicon phase and the grain size for these preforms and extruded samples were examined by Image Analyzer. Experimental observation revealed that with increase in volume percent of SiC particles, the grain size and silicon phase of the $Al-Si/SiC_p$ composites become finer, the shape of Si phase is changed from blocky to granular type, and aspect ratio of Si phase tend to become unity. Wear-tests with various sliding velocities, show that the wear resistance of spray cast specimen is increased remarkably compare to the permanent mold cast specimen at the sliding velocity range of $1.98{\sim}2.38m/sec$.. Microstructural observations for the worn surfaces of specimens revealed that wear resistance of Al-Si alloys at certain sliding velocities could be improved not only by the fine grain size of aluminum matrix but also the fine size and granular shape of silicon phases. The wear resistance of $SiC_p$ reinforced aluminum composites was found to be sensitive to the volume percentage of the reinforcing particles. The worn surfaces with various sliding velocities, show that change in wear mechanism seems to occur at the sliding velocity of near 2m/sec for all samples, and such a change in mechanism is delayed with increase in $SiC_p$ volume fraction.

• 한국진공학회지
• /
• 제13권3호
• /
• pp.120-126
• /
• 2004

트렌치 소자 제조시 게이트 산화막 성장과 내압 강하의 원인이 되는 식각손상 회복과 코너 영역의 구조를 개선하기 위해 수소 분위기 열처리를 하였다. 열처리시 수소 원자에 의한 환원 반응을 이용하여 표면 에너지가 높은 코너 영역에서는 원자들의 이동에 의한 결정면 재배열, 산화막 측벽에서의 실리콘 원자 적층, 표면 거칠기의 개선 효과 등을 전자현미경 관찰을 통해 확인하였다. 실리콘 원자의 이동을 방해하는 식각 후 잔류 산화막을 수소 가스의 환원성 분위기에서 열처리함으로써 표면 에너지를 낮추는 방향으로 원자의 이동이 일어나 concave 영역, 즉 트렌치 bottom corner에서는 (111), (311) 결정면 재분포 현상이 일어남을 확인할 수 있었다. 또한 convex comer에서의 원자 이동으로 인해 corner 영역에서는 (1111) 면의 step 들이 존재하게 되고 원자 이동에 의해 산화막 측벽에 이르러 이동된 원자의 적층이 일어나며, 이는 열처리시 표면 손상 회복이 원자이동에 의함을 나타낸다. 이러한 적층은 표면 상태가 깨끗할수록 정합성을 띄어 기판과 일치하는 에피 특성을 나타내고 열처리 온도가 높을수록 표면 세정 효과가 커져 식각손상 회복효과가 커지며, 이를 이용하여 이후의 산화막 성장시 균일한 두께를 코너영역에서 얻을 수 있었다

• Restorative Dentistry and Endodontics
• /
• 제16권1호
• /
• pp.200-208
• /
• 1991

The purpose of this study was to observe shear bond strength of composite resin to dentin following surface treatment. Freshly extracted forty-eight sound human molars were used in this study. They were stored at $4^{\circ}C$ physiologic saline solution before experiment. The teeth was then mounted with self curing acrylic resin in brass mold. The buccal surfaces of the teeth were grinding approximately 1.5mm by means of water-irrigated grinding wheel to expose the flattened fresh dentin surfaces. The specimens were divided into 6 groups according to preparation and treatment procedures on dentin surfaces; Group 1: Untreated after preparation with No.301 diamond point Group 2: Treated with primer for 60 seconds after preparation with No.301 diamond point Group 3: Untreated after preparation with No.700 fissure carbide bur Group 4: Treated with primer for 60 seconds after preparation with No.700 fissure carbide bur Group 5: Untreated after grinding with 600 grit silicon carbide paper Group 6: Treated with primer for 60 seconds after grinding with 600 grit silicon carbide paper Light cure dental adhesive was applicated to each specimen. Silux plus(3M) was inserted then into polyethylene tube of 3mm diameter and 3mm height, and polymerized to dentin surface. All of the specimens were stored in distilled water at $35.6^{\circ}C$ for 24 hours prior to testing. The shear bond strength was measured using an Instron Universal Testing Machine. The results obtained from this study were as follows: 1. The shear bond strength to dentin was the highest in group II. 2. The shear bond strength to dentin was the lowest in group III. 3. There was no significant difference in shear bond strength to dentin according to preparation instrument. 4. The primer treatment group showed significantly greater shear bond strength than untreated group.