• Title/Summary/Keyword: Silicon surfaces

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Effect of defects on lifetime of silicon electrodes and rings in plasma etcher (플라즈마 에쳐용 실리콘 전극과 링의 수명에 미치는 결함의 영향)

  • Eum, Jung-Hyun;Chae, Jung-Min;Pee, Jae-Hwan;Lee, Sung-Min;Choi, Kyoon;Kim, Sang-Jin;Hong, Tae-Sik;Hwang, Choong-Ho;Ahn, Hak-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.2
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    • pp.101-105
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    • 2010
  • Silicon electrode and ring in a plasma etcher those are in contact with harsh plasma suffer from periodic heating and cooling during their lifetime. This causes the silicon components failure due to thermal stress remaining the persistent slip bands (PSBs) on their surfaces. The factors that determine the lifetime of silicon electrode and ring were discussed with respect to silicon ingot. The impurity level and the average defect concentration measured with glow discharge mass spectrometer (GDMS) and microwave photo-conductance decay (${\mu}$-PCD) were compared with the grade of silicon ingots those are divided to slip-free and slip-allowed ingot. Some silp-allowed samples showed planar defects along <110> direction on {001} surface. The role of these defects was suggested from the viewpoint of the lifetime of silicon components.

Anisotropic etching characteristics of single crystal silicon by KOH and KOH-IPA solutions (KOH 용액 및 KOH-IPA 혼합용액에 의한 단결정 실리콘의 이방성식각 특성)

  • 조남인;천인호
    • Journal of the Korean Vacuum Society
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    • v.11 no.4
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    • pp.249-255
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    • 2002
  • For a formation of membrane structures, single crystal silicon wafers have been anisotropically etched with solutions of KOH and KOH-IPA. The etching rate was observed to be strongly dependent upon the etchant temperature and concentration. Mask patterns for the etching experiment was aligned to incline $45^{\circ}$on the primary flat of the silicon wafer. The different etching characteristics were observed according to pattern directions and etchant concentration. When the KOH concentration was fixed to 20 wt%, the U-groove etching shape was observed for the etching temperature of above $80^{\circ}C$, and V-groove shapes observed at below $80^{\circ}C$. Hillocks, which were generated at the etched silicon surfaces, has been decreased as the increasing of the etchant temperature and concentration.

A Propotition of a New Parameter in Ceramic Wear(I) Friction and Wear Characteristics of Silicon Nitride and Zirconia (세라믹 마멸에 있어서의 새로운 파라메터 제안 (I) 질화규소와 지르코니아의 마찰$\cdot$마멸 특성)

  • ;;Hsu, S. M.
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.17 no.6
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    • pp.1441-1455
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    • 1993
  • Under unlubricated condition, the friction and wear tests of silicon nitride and zirconia manufactured by HIP were carried out at room temperature. The wear resistance of silicon nitride was superior to that of zirconia under low load, whereas the wear resistance of zirconia was superior to that of silicon nitride under high load. Wear model of ceramic was suggested by the microscopic SEM observation of worn surfaces and debris. Theoretical analysis and discussions based on linear fracture mechanics were made out about this ceramic wear model. From the theoretical analysis, a new nondimensional parameter, Scf, was introduced to estimate wear rate of ceramics. This new nondimentional parameter consists of contact pressure, surface defect of contact material, frictional coefficient and fracture toughness.

Surface Reflectance Reduction of Multicrystalline Silicon Wafers for Solar Cells by Acid Texturing (Acid Texturing에 의한 태양전지용 다결정 실리콘 기판의 표면 반사율 감소)

  • Kim, Ji-Sun;Kim, Bum-Ho;Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.99-103
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    • 2008
  • To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controlling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400 nm to 1000 nm) reflectance with acid texturing is 4.64 % less than alkali texturing.

Investigation of Surface Reflectance Reduction for Multicrystalline Silicon Solar Cells with Acid Texturing (Acid Texturing에 의한 다결정 실리콘 태양전지의 표면 반사율 감소에 대한 연구)

  • Kim, Ji-Sun;Kim, Bum-Ho;Lee, Eun-Joo;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.16-17
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    • 2007
  • To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400nm to 1000nm) reflectance with acid texturing is 4.64% less than alkali texturing.

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Study of Ni/Cu Front Metal Contact Applying Selective Emitter Silicon Solar Cells (선택도핑을 적용한 Ni/Cu 전면 전극 실리콘 태양전지에 관한 연구)

  • Lee, JaeDoo;Kwon, Hyukyong;Lee, SooHong
    • Korean Journal of Metals and Materials
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    • v.49 no.11
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    • pp.905-909
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    • 2011
  • The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (${\leq}30{\Omega}/sq$) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel silicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a $2{\times}2cm^2$, Cz wafer.

Study on the Direct Bonding of Silicon Wafers by Cleaning in $HNO_3:H_2_O2:HF$ (HNO$_3:H_2O_2$ : HF 세척법을 이용한 실리콘 직접 접합 기술에 관한 연구)

  • Joo, C.M.;Choi, W.B.;Kim, Y.S.;Kim, D.N.;Lee, J.S.;Sung, M.Y.
    • Proceedings of the KIEE Conference
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    • 1999.07g
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    • pp.3310-3312
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    • 1999
  • We have studied the method of silicon direct bonding using the mixture of $HNO_$, $H_2O_2$, and HF chemicals called the controlled slight etch (CSE) solution for the effective wafer cleaning. CSE, two combinations of oxidizing and etching agents, have been used to clean the silicon surfaces prior to wafer bonding. Two wafers of silicon and silicon dioxide were contacted each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in $N_2$ ambient for 2.5 h. We have cleaned silicon wafers with the various HF concentrations and characterized the parameters with regard to surface roughness, chemical nature, chemical oxide thickness, and bonding energy. It was observed that the chemical oxide thickness on silicon wafer decreased with increasing HF concentrations. The initial interfacial energy and final energy postannealed at $1100^{\circ}C$ for 2.5h measured by the crack propagation method was 122 $mJ/m^2$ and 2.96 $mJ/m^2$, respectively.

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Microstructure and Wear Behavior of $SiC_p-reinforced$ Aluminum Matrix Composites Fabricated by Spray Casting Process (분사주조한 $SiC_p$ 입자강화 알루미늄 복합재료의 미세조직과 마멸특성)

  • Park, Chong-Sung;Kim, Myung-Ho
    • Journal of Korea Foundry Society
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    • v.15 no.6
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    • pp.574-587
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    • 1995
  • The $SiC_p-reinforced$ preforms fabricated by spray casting process were hot-extruded and subsequently T6-treated, and the morphology of the silicon phase and the grain size for these preforms and extruded samples were examined by Image Analyzer. Experimental observation revealed that with increase in volume percent of SiC particles, the grain size and silicon phase of the $Al-Si/SiC_p$ composites become finer, the shape of Si phase is changed from blocky to granular type, and aspect ratio of Si phase tend to become unity. Wear-tests with various sliding velocities, show that the wear resistance of spray cast specimen is increased remarkably compare to the permanent mold cast specimen at the sliding velocity range of $1.98{\sim}2.38m/sec$.. Microstructural observations for the worn surfaces of specimens revealed that wear resistance of Al-Si alloys at certain sliding velocities could be improved not only by the fine grain size of aluminum matrix but also the fine size and granular shape of silicon phases. The wear resistance of $SiC_p$ reinforced aluminum composites was found to be sensitive to the volume percentage of the reinforcing particles. The worn surfaces with various sliding velocities, show that change in wear mechanism seems to occur at the sliding velocity of near 2m/sec for all samples, and such a change in mechanism is delayed with increase in $SiC_p$ volume fraction.

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RIE induced damage recovery on trench surface (트렌치 표면에서의 RIE 식각 손상 회복)

  • 이주욱;김상기;배윤규;구진근
    • Journal of the Korean Vacuum Society
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    • v.13 no.3
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    • pp.120-126
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    • 2004
  • A damage-reduced trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy, which was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $O_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching. To reduce the RIE induced damage and obtain the fine shape trench corner rounding, we investigated the hydrogen annealing effect after trench formation. Silicon atomic migration on trench surfaces using high temperature hydrogen annealing was observed with atomic scale view. Migrated atoms on crystal surfaces formed specific crystal planes such as (111), (113) low index planes, instead of fully rounded comers to reduce the overall surface energy. We could observe the buildup of migrated atoms against the oxide mask, which originated from the surface migration of silicon atoms. Using this hydrogen annealing, more uniform thermal oxide could be grown on trench surfaces, suitable for the improvement of oxide breakdown.

A STUDY ON SHEAR BOND STRENGTH OF COMPOSITE RESIN TO DENTIN FOLLOWING SURFACE TREATMENTS (표면처리에 따른 상아질과 콤포짓드 레진간의 전단결합강도에 관한 연구)

  • Noh, Eun-Hee;Park, Sang-Jin
    • Restorative Dentistry and Endodontics
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    • v.16 no.1
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    • pp.200-208
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    • 1991
  • The purpose of this study was to observe shear bond strength of composite resin to dentin following surface treatment. Freshly extracted forty-eight sound human molars were used in this study. They were stored at $4^{\circ}C$ physiologic saline solution before experiment. The teeth was then mounted with self curing acrylic resin in brass mold. The buccal surfaces of the teeth were grinding approximately 1.5mm by means of water-irrigated grinding wheel to expose the flattened fresh dentin surfaces. The specimens were divided into 6 groups according to preparation and treatment procedures on dentin surfaces; Group 1: Untreated after preparation with No.301 diamond point Group 2: Treated with primer for 60 seconds after preparation with No.301 diamond point Group 3: Untreated after preparation with No.700 fissure carbide bur Group 4: Treated with primer for 60 seconds after preparation with No.700 fissure carbide bur Group 5: Untreated after grinding with 600 grit silicon carbide paper Group 6: Treated with primer for 60 seconds after grinding with 600 grit silicon carbide paper Light cure dental adhesive was applicated to each specimen. Silux plus(3M) was inserted then into polyethylene tube of 3mm diameter and 3mm height, and polymerized to dentin surface. All of the specimens were stored in distilled water at $35.6^{\circ}C$ for 24 hours prior to testing. The shear bond strength was measured using an Instron Universal Testing Machine. The results obtained from this study were as follows: 1. The shear bond strength to dentin was the highest in group II. 2. The shear bond strength to dentin was the lowest in group III. 3. There was no significant difference in shear bond strength to dentin according to preparation instrument. 4. The primer treatment group showed significantly greater shear bond strength than untreated group.

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