• 제목/요약/키워드: Silicon solar wafer

검색결과 198건 처리시간 0.023초

박형 결정질 실리콘 태양전지에서의 휨현상 감소를 위한 알루미늄층 두께 조절 (Bow Reduction in Thin Crystalline Silicon Solar Cell with Control of Rear Aluminum Layer Thickness)

  • 백태현;홍지화;임기조;강기환;강민구;송희은
    • 한국태양에너지학회 논문집
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    • 제32권spc3호
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    • pp.194-198
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    • 2012
  • Crystalline silicon solar cell remains the major player in the photovoltaic marketplace with 80% of the market, despite the development of various thin film technologies. Silicon's excellent efficiency, stability, material abundance and low toxicity have helped to maintain its position of dominance. However, the cost of silicon materials remains a major barrier to reducing the cost of silicon photovoltaics. Using the crystalline silicon wafer with thinner thickness is the promising way for cost and material reduction in the solar cell production. However, the thinner the silicon wafer is, the worse bow phenomenon is induced. The bow phenomenon is observed when two or more layers of materials with different temperature expansion coefficiencies are in contact, in this case silicon and aluminum. In this paper, the solar cells were fabricated with different thicknesses of Al layer in order to reduce the bow phenomenon. With less amount of paste applications, we observed that the bow could be reduced by up to 40% of the largest value with 120 micron thickness of the wafer even though the conversion efficiency decrease by 0.5% occurred. Since the bowed wafers lead to unacceptable yield losses during the module construction, the reduction of bow is indispensable on thin crystalline silicon solar cell. In this work, we have studied on the counterbalance between the bow and conversion efficiency and also suggest the formation of enough back surface field (BSF) with thinner Al layer application.

태양광 실리콘 웨이퍼 세정제 개발 (Development of Cleaning Agents for Solar Silicon Wafer)

  • 배수정;이호열;이종기;배재흠;이동기
    • 청정기술
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    • 제18권1호
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    • pp.43-50
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    • 2012
  • 태양전지 제조공정 중 잉곳의 절삭공정 후 진행되는 태양광 실리콘 웨이퍼 세정에 관한 연구를 수행하였다. 태양광 실리콘 웨이퍼는 잉곳의 생산방법에 따라 단결정과 다결정 웨이퍼로 분류되고, 절삭 방법에 따라서는 슬러리로 절삭한 웨이퍼와 다이아몬드 와이어로 절삭한 웨이퍼로 구분할 수 있으며, 이의 방법들에 따라 웨이퍼 표면과 오염원이 달라질 수 있다. 본 연구에서는 세정대상물에 따라 오염원과 웨이퍼 표면의 특성을 관찰하였고 적합한 세정제를 개발하여 물성 및 세정성을 평가하여 적용성을 확인하고자 하였다. 개발된 세정제로 세정한 웨이퍼는 XPS 분석결과 잔류 오염물질이 관찰되지 않았으며, 표면조직화 후 균일한 패턴을 형성함을 확인할 수 있었다. 또한, 개발된 세정제를 웨이퍼 생산현장에서 테스트를 진행하여 기존 세정제보다 우수한 세정결과를 확보하였다.

삼상 실리콘 기판을 사용한 저가 전극 함몰형 태양전지 (Buried contact solar cells using tri-crystalline silicon wafer)

  • 권재홍;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.176-180
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    • 2003
  • Tri-crystalline silicon (Tri-Si) wafers have three different orientations and three grain boundaries. In this paper, tri-Si wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast multi-crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to 15% whereas the cast multi-Si wafer has efficiency around 14%.

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습식 화학 공정에 의한 태양전지로부터 고순도 실리콘 회수 및 이를 이용한 태양전지 재제조 (Photovoltaic Performance of Crystalline Silicon Recovered from Solar Cell Using Various Chemical Concentrations in a Multi-Stage Process)

  • 노민호;이준규;안영수;여정구;이진석;강기환;조철희
    • 한국재료학회지
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    • 제29권11호
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    • pp.697-702
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    • 2019
  • In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon. A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

웨이퍼 접착 텍스쳐링 방식을 이용한 다결정 실리콘 태양전지 제조 (Fabrication of Multi-crystalline Silicon Solar Cell by using Wafer Adhesion Texturing Method)

  • 윤석일;노시철;최정호;정종대;서화일
    • 반도체디스플레이기술학회지
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    • 제15권4호
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    • pp.67-72
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    • 2016
  • In this study, the texturing and the emitter formation processes were carried out with the wafer adhesion method to increase the productivity and reduce the production cost of the multi-crystalline silicon solar cell. After fabricating $156{\times}156mm$ solar cell according to the wafer adhesion method, the operation characteristics were analyzed and compared with those of the solar cell fabricated by the standard process method. In the case of a solar cell formed by the wafer adhesion method, it showed Jsc of $32.87mA/cm^2$, Voc of 0.612V, FF of 78.04% and efficiency of 15.71% respectively. The efficiency of the solar cell formed by the wafer adhesion method was 0.1% higher than that of the solar cell formed by the standard method. In addition, the productivity of the texturing and the emitter formation processes is expected to be approximately doubled. Therefore, it is expected that the manufacturing cost of the multi-crystalline solar cell can be reduced due to the improved productivity compared with the standard process.

A study on the fabrication of poly crystalline Si wafer by vacuum casting method and the measurement of the efficiency of solar cell

  • Lee, Geun-Hee;Lee, Zin-Hyoung
    • 한국결정성장학회지
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    • 제12권3호
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    • pp.120-125
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    • 2002
  • Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

나노 임프린트 공정을 이용한 결정형 실리콘 태양전지 효율 향상 기술 (Technology for Efficiency Enhancement of Crystalline Si Solar Cell using Nano Imprint Process)

  • 조영태;정윤교
    • 한국기계가공학회지
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    • 제12권5호
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    • pp.30-35
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    • 2013
  • In order to increase cell efficiency in crystalline silicon solar cell, reduction of light reflection is one of the essential problem. Until now silicon wafer was textured by wet etching process which has random patterns along crystal orientation. In this study, high aspect ratio patterns are manufactured by nano imprint process and reflectance could be minimized under 1%. After that, screen printed solar cell was fabricated on the textured wafer and I-V characteristics was measured by solar simulator. Consequently cell efficiency of solar cell fabricated using the wafer textured by nano imprint process increased 1.15% than reference solar cell textured by wet etching. Internal quantum efficiency was increased in the range of IR wave length but decreased in the UV wavelength. In spite of improved result, optimization between nano imprinted pattern and solar cell process should be followed.

박형 결정질 실리콘 태양전지 제작을 위한 웨이퍼 두께에 따른 특성 연구 (Characteristics of doping process with various wafer thicknesses for thin crystalline silicon solar cell application)

  • 정경택;이희준;송희은;유권종;양오봉
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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    • pp.101-104
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    • 2011
  • Many studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. In this paper, we carried out the doping procedure by varying the silicon wafer thicknesses and sheet resistance. The silicon wafers with various thicknesses were obtained by shiny etching and texturing. The thicknesses of wafers were 100, 120, 150, and $180{\mu}m$. The emitter layer formed by $POCl_3$ doping process had sheet resistance with 40 and $80{\Omega}/sq$ for selective emitter application. This experiment indicated wafer thickness did not influence sheet resistance but lifetime was strongly effected.

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