• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.891-896
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• 2003

Novel fabrication technique was developed for high strength Reaction-Bonded SiC (RBSC) hot gas filter for use in IGCC (Integrated Gasification Combined Cycle) system. The room and high temperature fracture strengths for Si-melt infiltrated reaction-bonded SiC were 50-123, and 60-66 MPa, respectively. The average pore size was 60-70 $\mu\textrm{m}$ and the porosity was about 34 vol％. RBSC infiltrated with molten silicon showed improved fracture strength at high temperature, as compared to that of clay-bonded SiC, due to SiC/Si phase present within SiC phase. The thickness for SiC/Si phase was increased with increasing powder particle size of SiC from 10 to 34 $\mu\textrm{m}$. Pressure drop with dust particles showed similar response as compared to that for Schumacher type 20 filter. The filter fabricated in the present study showed good performance in that the filtered powder size was reduced drastically to below 1 $\mu\textrm{m}$ within 4 min.

• Composites Research
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• v.20 no.5
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• pp.49-55
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• 2007

Nanocomposite blade for dicing semiconductor wafer is investigated for micro/nano-device and micro/nano-fabrication. While metal blade has been used for dicing of silicon wafer, polymer composite blades are used for machining of quartz wafer in semiconductor and cellular phone industry in these days. Organic-inorganic material selection is important to provide the blade with machinability, electrical conductivity, strength, ductility and wear resistance. Maintaining constant thickness with micro-dimension during shaping is one of the important technologies fer machining micro/nano fabrication. In this study the fabrication of blade by wet processing of mixing conducting nano ceramic powder, abrasive powder phenol resin and polyimide has been investigated using an experimental approach in which the thickness differential as the primary design criterion. The effect of drying conduction and post pressure are investigated. As a result wet processing techniques reveal that reliable results are achievable with improved dimension tolerance.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.22-30
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• 2024

This study reports a direct growth of carbon nanotubes (CNTs) on the surface of LiCoO₂ (LCO) powders to apply as highly efficient cathode materials in lithium-ion batteries (LIB). The CNT synthesis was performed using a thermal chemical vapor deposition apparatus with temperatures from 575 to 625 ℃. Ferritin molecules as growth catalyst of CNTs were mixed in deionized (DI) water with various concentrations from 0.05 to 1.0 mg/mL. Then, the LCO powders was dissolved in the ferritin solution at a ratio of 1g/mL. To obtain catalytic iron nanoparticles on the LCO surface, the LCO-ferritin suspension was dropped in silicon dioxide substrates and calcined under air at 550℃. Subsequently, the direct growth of CNTs on LCO powders was performed using a mixture of acetylene (10 sccm) and hydrogen (100 sccm) for 10 min. The growth behavior was characterized by scanning and transmission electron microscopy, Raman scattering spectroscopy, X-ray diffraction, and thermogravimetric analysis. The optimized condition yielding high structural quality and amount of CNTs was 600 ℃ and 0.5 mg/mL. The obtained materials will be developed as cathode materials in LIB.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.91-95
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• 2000

Powder mixtures of $\beta$-SiC-TiC in a weight ratio of 2:1 containing 5-20 wt% additives ($Al_2O_3$-$Y_2O_3$) were liquid-phase sintered at $1830^{\circ}C$ for 1h by hot-pressing and subsequently annealed at $1950^{\circ}C$ for 6h to enhance grain growth. The annealed specimens revealed a microstructure of \"in situ-toughened composite\" as a result of the $\beta$longrightarrow$\alpha$ phase transformation of SiC during annealing. The increase of the content of additives accelerated the growth of elongated $\alpha$-SiC grains with higher aspect ratio and improved fracture toughness. The fracture toughness of SiC-TiC composite containing 20 wt% additive was 6.2 MPa.$m^{1/2}$.2}$.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.1-33
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• 2000

Silicon carbide ceramics with sintering additives from the system AlN-Y$_2$O$_3$ can be gas-pressure sintered to theoretical density. While commonly a combination of sesquioxides is used such as Al$_2$O$_3$-Y$_2$O$_3$, the oxynitrid additives offer the advantage that only a nitrogen atmosphere is require instead of a powder. By starting form a mixture of ${\beta}$-SiC and ${\alpha}$-SiC, and by performing dedicated heat treatments after densification, anisotropic grain growth is obtained which leads to a platelet microstructure showing enhance fracture toughness. In the present work, recent improvement of the mechanical behaviour of these materials at ambient and high temperatures is reported. By means of a surface oxidation treatment in air it is possible to obtain four-point bending strengths in excess of 1 GPa, and the strength retention at high temperatures is significantly improved.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.923-932
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• 1998

Al2O3/Al composites were produced by displacement reaction method which was carried out by imm-ersing the sintered silica preform which was prepared form fused silica powder in molten aluminu. an ac-tivation energy of 94kJ/mole was calculated from Al-SiO2 reaction data in 1000-130$0^{\circ}C$ temperature range With increase of reaction temperature the alumina particle in the Al2O3/Al composites produced with pur metal Al showed grain growth and the growth of alumina particle in Al2O3/Al composite produced by using of Mg contained Al alloy was inhibited. The flexural strength of Al2O3/Al composites produced at 100$0^{\circ}C$ showed the highest value as 393 MPa. Flexural strength of the composite fabricated at 85$0^{\circ}C$ showed higher deviation than that of the composite produced at above 100$0^{\circ}C$ Low flexural strength of the composite fa-bricated at 120$0^{\circ}C$ due to the growth of pore and alumina particle size. The hardness of composites de-pended on alumina content in Al2O3/Al composite decreased with increasing of aluminium content in case the same alumina content and increased with increasing of silicon content in composite.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.619-625
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• 1997

$Si_3N_4$ powder with 2 wt% $Al_2O_3$ and 6 wt% $Y_2O_3$additives was gas pressure sintered (GPS). Characterization of the mechanical properties was compared with sintering conditions (temperature, pressure, time). Based on experimental result , the optimal condition of gas pressure sintering was found at $1900^{\circ}C$, 3 MPa for 1 hour. It is assumed that mechanical properties were degraded due to the grain coasening effects with increasing temperature or holding time. However, the grain size was decreased with increasing pressure, resulted in better strength, but lower fracture toughness. Present results suggested that optimization of processing parameters was impotant for better mechanical properties of $Si_3N_4$.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1449-1450
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol.%) mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS) under argon atmosphere at 50MPa(P50) and 60MPa(P60) pressure. The relative density, 94.13% of P60 sample was lower than that, 94.75% of P50 sample. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The trend of flexural strength of SiC-$ZrB_2$ composites were in accordance with the relative density. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance in the temperature range from $25^{\circ}C$ to $500^{\circ}C$, and electrical resistivity of P50 and P60 sample were $6.75{\times}10^{-4}$ and $7.22{\times}10^{-4}{\Omega}{\cdot}cm$ at room temperature, respectively.

• Journal of Environmental Science International
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• v.22 no.1
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• pp.83-89
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• 2013

Silicon carbide with aluminium oxide was used to remove the sulphur hexafluoride ($SF_6$) gas using microwave irradiation. The destruction and removal efficiencies (DREs) of $SF_6$ were studies as a function of various decomposition temperatures and microwave powers. The decomposition of $SF_6$ gas was analyzed using GC-TCD. XRD (X-ray powder diffraction) and XRF (X-ray Fluorescence Spectrometer) were used to characterize the properties of aluminum oxide. DREs of $SF_6$ were increased as the microwave powers were increased. Additive aluminium oxide on SiC increased the removal efficiencies and decreased the decomposition temperature. The XRD results show that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ during $SF_6$ decomposition by microwave irradiation. It was found that the best material to control $SF_6$ was SiC with $Al_2O_3$ 30 wt% in consideration of microwave energy consumption and $SF_6$ decomposition rate.