• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.211-214
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• 2009

A new porous silicon (PSi) microcavity sensor for the detection of volatile organic compounds (VOCs) was developed. PSi microcavity sensor exhibiting unique reflectivity was successfully obtained by an electrochemical etching of silicon wafer. When PSi was fabricated into a structure consisting of two high reflectivity muktilayer mirrors separated by an active layer, a microcavity was formed. This PSi microcavity is very sensitive structures. Reflection spectrum of PSi microcavity indicated that the full-width at half-maximum (FWHM) was of 10 nm and much narrower than that of fluorescent organic molecules or quantum dot. The detection of volatile organic compounds (VOCs) using PSi microcavity was achieved. When the vapor of VOCs condensed in the nanopores, the refractive indices of entire particle increased. When PSi microcavity was exposed to acetone, ether, and toluene, PSi microcavity in reflectivity was red shifted by 28 nm, 33 nm, and 20 nm for 2 sec, respectively.

• Journal of Integrative Natural Science
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• v.3 no.4
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• pp.202-205
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• 2010

Nanocrystalline porous silicon surfaces have been used to detect nitroaromatic compounds in vapor phase. The mode of photoluminescence is emphasized as a sensing attitude or detection technique. Quenching of photoluminescence from nanocrystalline porous surfaces as a transduction mode is measured upon the exposure of nitroaromatic compounds. Reversible detection mode for nitroaromatics is, too, observed. To verify the detection afore-mentioned, photoluminescent freshly prepared porous silicons are functionalized with different groups. The mechanism of quenching of photoluminescence is attributed to the electron transfer behaviors of quantum-sized nano-crystallites in the porous silicon matrix to the analytes(nitroaromatics). An attempt has been done to prove that the surface-derivatized photoluminescent porous silicone surfaces can act as versatile substrates for sensing behaviors due to having a large surface area and highly sensitive transduction mode.

• Journal of Integrative Natural Science
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• v.2 no.1
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• pp.37-40
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• 2009

Synthesis and characterization of alkyl-capped nanocrystalline silicon (R-n-Si) have been achieved from the reaction of silicontetrachloride with magnesiumsilicide. Surface of silicon nanocrystal has been derivatized with various alkyl groups (R=methyl, n-butyl, etc.). Silicon nanoparticles have been also obtained by the sonication of luminescent porous silicon. Former exhibits an emission band at 360 nm, but latter exhibits an emission band at 680 nm. In this study very sensitive detection of TNT (2,4,6-trinitrotoluene), DNT (2,4-dinitrotoluene), NB (nitrobenzene), and PA (picric acid) has been achieved in gas phase with porous silicon using photoluminescence quenching of the silicon crystallites as a transduction mode. Porous silicon are electrochemically etched from crystalline silicon wafers in an aqueous solution of hydrofluoric acid. We have characterized these silicon nanoparticles by Luminescence Spectrometer (LS 55).

• Journal of Integrative Natural Science
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• v.2 no.4
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• pp.275-279
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• 2009

Recently, number of studies for porous silicon (PSi) have been investigated by many researchers. Multistructured porous silicon such as a distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by using an electrochemical etch of $P{^+}{^+}$-type silicon wafer with resistivity between 0.1 and $10m{\Omega}cm$. The electrochemical etch with square wave current density results in two different refractive indices in the porous layer. In this work, DBR porous silicon chips for a simple and portable organic vapor-sensing device have fabricated. The optical characteristics of DBR PSi have been investigated. DBR porous silicon have been characterized by FT-IR and Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to organic vapor at room temperature.

• Bulletin of the Korean Chemical Society
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• v.16 no.10
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• pp.905-907
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• 1995

• Archives of Pharmacal Research
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• v.27 no.4
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• pp.371-375
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• 2004

The silicon linker is the foremost traceless linker used in solid-phase reactions. Hydrogen fluo-ride (HF) or trifluoroacetic aicd (TFA) can remove the silicon linker with the silicon atom being replaced by a hydrogen atom. In this experiment, the linkers 1c and 2d, which are the most useful in solid-phase reactions, were synthesized, Linker 1c is composed of seven linearly linked carbons and linker 2d includes an oxygen atom in the linear carbon chain to increase the solvation capacity. The carboxylic acid component of linker 1c and 2d forms an amide or ester bond with resin. The synthesized linkers 1c and 2d could be utilized in constructing a chemical compound library that includes indole, benzodiazepine and phenothiazine (aromatic ring compounds).

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.2
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• pp.248-253
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• 1987

Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1170-1176
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• 1996

Porous silicon was prepared by anodic reaction. The process was controlled by current density and etching time an the thickness change and the room temperature PL was measured. The thickness of porous silicon was increased with etching time and was decreased after critical time. It was the same as increasing current density. It needed only 15 sec to electropolish the surface of porous silicon above current density 70 mA/cm2. We can understand that increasing etching time leads narrow size of Si column by porous silicon formation mechanism. And the sample with narrow Si column revealed PL blue shift. The specimens were heated in the range of 300-1000$^{\circ}C$ in order to see PL changes. The heat treatment was proceeded in H2 atmosphere vacuum system to avoid oxidation. The PL was disappeared above 600$^{\circ}C$. In high temperature some sintered Si columns were observed in SEM photography. There was no difference of -Hx bonds which was suggested as evidence of hydride compounds luminescence between 500$^{\circ}C$ and 600$^{\circ}C$. Thus it is concluded that quantum confinement is major factor of PL of porous silicon.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.2
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• pp.109-115
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• 2022

The demand for metal 3D printing technology is increasing in various industries. The materials commonly used for metal 3D printing include aluminum alloys, titanium alloys, and stainless steel. In particular, for applications in the aviation and defense industry, aluminum alloy 3D printing parts are being produced. To improve the corrosion resistance in the 3D printed aluminum alloy outputs, a post-treatment process, such as chromate coating, should be applied. However, powdered materials, such as AlSi7Mg and AlSi10Mg, used for 3D printing, have a high silicon content; therefore, a suitable pretreatment is required for chromate coating. In the desmut step of the pretreatment process, the chromate coating can be formed only when a smut composed of silicon compounds or oxides is effectively removed. In this study, suitable desmut solutions for 3D printed AlSi7Mg and AlSi10Mg materials with high silicon contents were presented, and the chromate coating properties were studied accordingly. The smut removal effect was confirmed using an aqueous desmut solution composed of sulfuric, nitric, and hydrofluoric acids. Thus, a chromate coating was successfully formed. The surfaces of the aluminum alloys after desmut and chromate coating were analyzed using SEM and EDS.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.