• 제목/요약/키워드: Silicon carbides

검색결과 24건 처리시간 0.028초

아공정(亞共晶)Cr 주철(鑄鐵)의 기지조직(基地組織)에 미치는 Si의 영향(影響) (Study on the effect of silicon content on matrix of hypo-eutectic Cr alloyed cast iron)

  • 김석원;이오연;김동건
    • 한국주조공학회지
    • /
    • 제4권2호
    • /
    • pp.96-101
    • /
    • 1984
  • The morphologies of eutectic cell formed during solidification affect on the mechanical properties in high Cr cast iron. In order to investigate the influence of Si on the structure, five kinds of specimen containing 16.42% Cr with varying amount of Si (0.51%, 1.17%, 2.22%, 2.71%, 3.56%) were poured into shell mould preheated $330^{\circ}C$ at $1510^{\circ}C$. The effect of Si on matrix in hypo-eutctic Cr cast iron (2.48% C, 16.42%) were studied through its mechanical tests and observation of microstructure using of metallurgical microscope, EPMA, SEM and Image analyzer systematically. The results obtained from the above studies are as follows: 1. Because of ${\Delta}T$ decreasing with increasing Si content, the morpologies of colony change into uniform bar-type carbide from plate-type ones, moreover eutectic colony size (Ew) becomes narrow and spacing of carbide wider. 2. As Si content increases, the amount of carbides also increases and most of Cr were dissolved in carbides while Si in matrix. 3. The hardness, tensile strength and wear resistance were increasing while impact value decreased with increasing Si content. 4. In fracture section, small amount of dimple pattern was observed in less than 1.17% Si but more than 2.22% Si river pattern was presented.

  • PDF

Fe-3%C-x%Cr-y%V-w%Mo-z%W 다합금계백주철의 주방상태 및 급냉조직 (As-Cast and Solidification Structures of Fe-3%C-x%Cr-y%V-w%Mo-z%W Multi- Component White Cast Irons)

  • Yu, sung-Kon;Shin, Sang-Woo
    • 한국재료학회지
    • /
    • 제12권5호
    • /
    • pp.414-422
    • /
    • 2002
  • Three different multi-component white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their as-cast and solidification structures. Three combinations of the alloying elements were selected so as to obtain the different types of carbides and matrix structures : 3%C-10%Cr-5%Mo-5%W(alloy No.1), 3%C-10%V-5% Mo-5%W(alloy No. 2) and 3%C-17%Cr-3% V(alloy No.3). The as-cast microstructures were investigated with optical and scanning electron microscopes. There existed two different types of carbides, $M_7C_3$ carbide with rod-like morphology and $M_6C$ carbide with fishbone-like one, and matrix in the alloy No. 1. The alloy No. 2 consisted of MC carbide with chunky and flaky type and needle-like $M_2C$ carbide, and matrix. The chunky type referred to primary MC carbide and the flaky one to eutectic MC carbide. The morphology of the alloy No. 3 represented a typical hypo-eutectic high chromium white cast iron composed of rod-like $M_7C_3$ carbide which is very sensitive to heat flow direction and matrix. To clarify the solidification sequence, each iron(50g) was remelted at 1723K in an alumina crucible using a silicon carbide resistance furnace under argon atmosphere. The molten iron was cooled at the rate of 10K/min and quenched into water at several temperatures during thermal analysis. The solidification structures of the specimen were found to consist of austenite dendrite(${\gamma}$), $ ({\gamma}+ M_7C_3)$ eutectic and $({\gamma}+ M_6C)$ eutectic in the alloy No. 1, proeutectic MC, austenite dendrite(${\gamma}$), (${\gamma}$+MC) eutectic and $({\gamma}+ M_2C)$ eutectic in the alloy No. 2, and proeutectic $M_7C_3$ and $ ({\gamma}+ M_7C_3)$ eutectic in the alloy No 3. respectively.

THE NEW TYPE BROAD BEAM ION SOURCES AND APPLICATIONS

  • You, D.W.;Feng, Y.C.;Wang, Y.;Kuang, Y.Z.
    • 한국진공학회지
    • /
    • 제4권S2호
    • /
    • pp.131-138
    • /
    • 1995
  • The broad beam ion sources of hot filament plasma type have widely used for modifications of materials and thin films, and the new type intensive current broad beam metal ion source including reactive gaseous ion beams is needed for preparing the hard coating films such as DLC, $\beta-C_3N_4$ Carbides, Nitrides, Borides etc. Now a electorn beam evaporation(EBE) broad beam metal ion source has been developed for this purpose in our lab. CN film has been formed by the EBE ion source. Study of the CN film shows that it has high hardness(HK=5800kgf/$\textrm {mm}^2$)and good adhesion. This method can widely changes the ratio of C/N atom's concentrations from 0.14 to 0.6 and has high coating rate. The low energy pocket ion source which was specially designed for surface texturing of medical silicon rubber was also developed. It has high efficiency and large uniform working zone. Both nature texturing and mesh masked texturing of silicon rubbers were performed. The biocompatibility was tested by culture of monocytes, and the results showed improved biocompatibility for the treated silicon rubbers. In addition, the TiB2 film synthesized by IBED is being studied recently in our lab. In this paper, the results which include the hardness, thickness of the films and the AES, XRD analysis as well as the tests of the oxidation of high temperature and erosion will be presented.

  • PDF

Effects of Mixing Ratio of Silicon Carbide Particles on the Etch Characteristics of Reaction-Bonded Silicon Carbide

  • Jung, Youn-Woong;Im, Hangjoon;Kim, Young-Ju;Park, Young-Sik;Song, Jun-Baek;Lee, Ju-Ho
    • 한국세라믹학회지
    • /
    • 제53권3호
    • /
    • pp.349-353
    • /
    • 2016
  • We prepared a number of reaction-bonded silicon carbides (RBSCs) made from various mixing ratios of raw SiC particles, and investigated their microstructure and etch characteristics by Reactive Ion Etch (RIE). Increasing the amount of $9.5{\mu}m$-SiC particles results in a microstructure with relatively coarser Si regions. On the other hand, increasing that of $2.6{\mu}m$-SiC particles produces much finer Si regions. The addition of more than 50 wt% of $2.6{\mu}m$-SiC particles, however, causes the microstructure to become partially coarse. We also evaluated their etching behaviors in terms of surface roughness (Ra), density and weight changes, and microstructure development by employing Confocal Laser Scanning Microscope (CLSM) and Scanning Electron Microscope (SEM) techniques. During the etching process of the prepared samples, we confirmed that the residual Si region was rapidly removed and formed pits isolating SiC particles as islands. This leads to more intensified ion field on the SiC islands, and causes physical corrosion on them. Increased addition of $2.6{\mu}m$-SiC particles produces finer residual Si region, and thus decreases the surface roughness (Ra.) as well as causing weight loss after etching process by following the above etching mechanism.

액상소결 $\alpha$형 탄화규소의 미세구조 변화 (Microstructural evolution in liquid-phase sintered $\alpha$-silicon carbide)

  • 이종국;강현희;박종곤;이은구
    • 한국결정성장학회지
    • /
    • 제8권2호
    • /
    • pp.324-331
    • /
    • 1998
  • 2, 5, 10 mol% YAG(yttrium aluminum garnet) 분말을 액상 소결조제로 $\alpha$상 탄화규소 분말에 첨가한 후 $1850^{\circ}C$에서 소결시간을 달리하여 소결체를 제조한 다음, 소결시 일어나는 미세구조 변화를 첨가된 액상량과 소결시간의 변화에 대하여 고찰하였다. 각 조성중 2시간 소결한 시편에서 가장 높은 밀도를 나타냈으며, 소결시간이 길수록 액상의 기화로 인하여 중량감소량이 점차 증가하였다. 또한 첨가된 YAG 액상량이 증가할 수록 상대밀도(apparent density)와 중량감소량은 증가하였으나 입성장속도는 감소하였다. 액상량이 적은 시편에서는 소결시간이 길수록 일부 6H상의 탄화규소 입자가 4H상 탄화규소 입자로 상전이 되었으며, 이로 인하여 막대상 입자들이 일부 존재하였다.

  • PDF

내마모 CV흑연주철의 공정인화물 형성에 미치는 합금원소 및 냉각속도의 영향 (The Effects of Alloying Elements and Cooling Rates on the Formation of Phosphide Eutectics of Wear Resistance CV Graphite Cast Irons)

  • 박흥일;김명호
    • 한국주조공학회지
    • /
    • 제9권4호
    • /
    • pp.311-319
    • /
    • 1989
  • The effects of the alloying elements and cooling rates on the formation of phosphide eutectics of compacted vermicular graphite cast irons containing copper, tin, molybdenum for producing pearlitic matrix, and also containing phosphorus and boron for increasing wear resistance, were investigated. The liquidus phosphide eutectic was found to solidify as a pseudo-binary phosphide eutectic, but with increasing of the cooling rate non-equlibrium phosphide eutectic with needle type carbide could be formed. However, the liquidus phosphide eutectic containing both phosphorus and carbide-forming boron was found to solidify always as a non-equlibrium phosphide eutectic with coarse carbide, independent from the cooling rate. It was also confirmed that the tiny isolated phase observed by SEM was gamma iron solid solution with phosphorus, silicon, molybdenum and the matrix containing these tiny islands was phosphide phase containing manganese and molybdenum. The addition of copper was found to decrease the tendency of forming ledeburitic carbides in the phosphide eutectic.

  • PDF

Ultra-fine Grained and Dispersion-strengthened Titanium Materials Manufactured by Spark Plasma Sintering

  • Handtrack, Dirk;Sauer, Christa;Kieback, Bernd
    • 한국분말야금학회:학술대회논문집
    • /
    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
    • /
    • pp.725-726
    • /
    • 2006
  • Ultra-fine grained and dispersion-strengthened titanium materials (Ti-Si, Ti-C, Ti-Si-C) have been produced by high energy ball milling and spark plasma sintering (SPS). Silicon or/and carbon were milled together with the titanium powder to form nanometer-sized and homogeneously distributed titanium silicides or/and carbides as dispersoids, that should prevent grain coarsening during the SPS compaction and contribute to strengthening of the material. The microstructures and the mechanical properties showed that strength, hardness and wear resistance of the sintered materials have been significantly improved by the mechanisms of grain refinement and dispersion strengthening. The use of an organic fluid as carrier of the dispersoid forming elements caused a significant increase in ductility.

  • PDF

Effect of Silicon on the Fracture Characteristics of Austempered Ductile Iron

  • Kang, In-Chan
    • 한국주조공학회지
    • /
    • 제12권1호
    • /
    • pp.25-31
    • /
    • 1992
  • The effects of Si and austempering temperature on the fracture characteristics and the microstructures of austempered ductile irons were investigated. As Si content increased from 2.28% to 3.0%, the precipitation of carbides during bainitic transformation and was suppressed the amount of retained austenite increased resulting in the increase in the fracture toughness. It is believed that the high Si limited the formation of martensite in the microstructure and minimized the segregation of the other elements at cell boundaries. But in samples with too high Si content as 3.3%, the formation of islands of free ferrite in the bainitic structures was observed and the fracture toughness was measured to have degraded.

  • PDF

완전 탄소 프리폼으로부터 Si 용융 침투에 의해 제조한 반응 소결 탄화규소의 치밀화에 미치는 Y2O3 첨가량의 영향 (Effect of Y2O3 Additive Amount on Densification of Reaction Bonded Silicon Carbides Prepared by Si Melt Infiltration into All Carbon Preform)

  • 조경식;장민호
    • 한국재료학회지
    • /
    • 제31권5호
    • /
    • pp.301-311
    • /
    • 2021
  • The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y2O3-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y2O3-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y2O3-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y2O3 phases are detected by XRD analysis without the appearance of graphite. As the content of Y2O3 in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y2O3 added has 0.20 % apparent porosity and 96.9 % relative density.

화학기상증착법으로 성장시킨 단결정 6H-SiC 동종박막의 성장 특성 (Growth characteristics of single-crystalline 6H-SiC homoepitaxial layers grown by a thermal CVD)

  • 장성주;설운학
    • 한국결정성장학회지
    • /
    • 제10권1호
    • /
    • pp.5-12
    • /
    • 2000
  • Silicon carbide(SiC)는 뛰어난 전기적, 열적, 물리적 특성 때문에 내환경 전자소자용 반도체 재료로 널리 연구되고 있다. 본 연구에서는 화학기상증착법으로 단결정 6H-SiC 동종박막을 성장시키고 이의 성장 특성을 조사하였다. 특히, 몰리브덴 (Mo)-plate를 이용하여 SiC를 코팅하지 않은 graphite susceptor를 사용한 6H-SiC 동종박막 성장조건을 성공적으로 얻었다. 대기압 상태의 RF-유도가열식 챔버에서 CVD성장을 수행하였고, <1120> 방향으로 $3.5^{\circ}$off-axis된 기판을 사용하였다. 성장 박막의 결정성을 평가하기 위하여 Nomarski 관찰, 투과율 측정 , 라만 분광, XRD, 광발광(PL) 분광, 투과전자현미경(TEM) 측 정 등의 방법을 이용하였다. 이상과 같은 실험을 통하여, 본 연구에서는 성장온도 $1500^{\circ}C$, C/Si flow ratio ($C_3H_8$ 0.2 sccm, $SiH_4$ 0.3 sccm)인 성장조건에서 결정성이 가장 좋은 6H-SiC 동종박막을 얻을 수 있었다.

  • PDF