• Title/Summary/Keyword: Silicon Nitride Ceramic

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Fabrication of a Complex-Shaped Silicon Nitride Part with Aligned Whisker Seeds Using LOM Technique

  • Park, Dong-Soo;Cho, Byung-Wook
    • Journal of the Korean Ceramic Society
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    • v.40 no.10
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    • pp.931-935
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    • 2003
  • A complex-shaped part was successfully fabricated by Laminate Object Manufacturing (LOM) technique using silicon nitride tape with aligned silicon nitride whisker seeds. The ceramic tape was cut using a commercial cutting plotter according to the cross section drafts generated by slicing a 3-D model, and then the tapes were stacked sequentially. In order to improve adhesion between the tapes, stacking was performed under vacuum. After binder burnout, the part was encapsulated using latex emulsion and was cold isostaically pressed under 250 ㎫. It was sintered to 98.5% TD at 2148 K for 4 h under 2 ㎫ nitrogen pressure.

High Thermal Conductivity Silicon Nitride Ceramics

  • Hirao, Kiyoshi;Zhou, You;Hyuga, Hideki;Ohji, Tatsuki;Kusano, Dai
    • Journal of the Korean Ceramic Society
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    • v.49 no.4
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    • pp.380-384
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    • 2012
  • This paper deals with the recent developments of high thermal conductivity silicon nitride ceramics. First, the factors that reduce the thermal conductivity of silicon nitride are clarified and the potential approaches to realize high thermal conductivity are described. Then, the recent achievements on the silicon nitride fabricated through the reaction bonding and post sintering technique are presented. Because of a smaller amount of impurity oxygen, the obtained thermal conductivity is substantially higher, compared to that of the conventional gas-pressure sintered silicon nitride, while the microstructures and bending strengths are similar to each other between these two samples. Moreover, further improvement of the thermal conductivity is possible by increasing ${\beta}/{\alpha}$ phase ratio of the nitrided sample, resulting in a very high thermal conductivity of 177 W/($m{\cdot}K$) as well as a high fracture toughness of 11.2 $MPa{\cdot}m^{1/2}$.

A Study on the Nitridation of $Si-Si_3N_4$ Compacts ($Si-Si_3N_4$ 성형체의 질화반응에 관한연구)

  • 이전국;김종희
    • Journal of the Korean Ceramic Society
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    • v.22 no.1
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    • pp.53-59
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    • 1985
  • Experiments related to nitriding silicon with addition of $Si_3N_4$ have provided information on the effects of such inclusion on the phase relationships of Reaction Bonded Silicon Nitride. In the current work specimens containing 0-25wt% Si3N4 which have 55.5wt% $\alpha$ 4.5wt% $eta$, 40wt% amorphous phase were nitrided for 7-20 hours at 1300-135$0^{\circ}C$ The evaluation of nitridation was per-formed by means of $\alpha$-and $\beta$-phase contents determination in nitrided specimens, In order to observe nitrided region between silicon and silicon nitride scanning electron microscopy was used to study reacted region between silicon and silicon nitride particle. For this purpose semiconductor-grade silicon wafer single crystal was used as a silicon source. The incorporation of small amount of $Si_3N_4$ powder is contributed to enhancing the rate of formation of $\alpha$-phase.

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The Effect of Initial Partial Pressure of Nitrogen on the Manufacturing of Reaction-Bonded Silicon Nitride (반응결합 질화규소의 제조의 있어서 초기 질소분압의 영향)

  • 이근예;이준근;오재희
    • Journal of the Korean Ceramic Society
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    • v.21 no.1
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    • pp.51-59
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    • 1984
  • In this paper mechanical properties of reaction-bonded silicon nitride are studied with the variation of initial nitrogen partial pressure. At 1, 25$0^{\circ}C$ the amount of nitridation and the nucleation of nitride increase linearly with the nitrogen partial pressure increase. After the nitridation is completed the density of nitride and modulus of rupture at room temperature are increased with the amount of nitridation. When the partial pressure of nitrogen is 0.5 atm the specimen show the optimum properties that is the highest density of nitride and modulus of rupture. Also the microstructure of $\alpha$-matte is deveoped very well at that pressure of nitrogen which contributes to the strength development of specimen. It is shown that with proper control of initial partial pressure of nitrogen high strength silicon nitride body can be manufactured for dynamic applications.

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A Propotition of a New Parameter in Ceramic Wear(I) Friction and Wear Characteristics of Silicon Nitride and Zirconia (세라믹 마멸에 있어서의 새로운 파라메터 제안 (I) 질화규소와 지르코니아의 마찰$\cdot$마멸 특성)

  • ;;Hsu, S. M.
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.17 no.6
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    • pp.1441-1455
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    • 1993
  • Under unlubricated condition, the friction and wear tests of silicon nitride and zirconia manufactured by HIP were carried out at room temperature. The wear resistance of silicon nitride was superior to that of zirconia under low load, whereas the wear resistance of zirconia was superior to that of silicon nitride under high load. Wear model of ceramic was suggested by the microscopic SEM observation of worn surfaces and debris. Theoretical analysis and discussions based on linear fracture mechanics were made out about this ceramic wear model. From the theoretical analysis, a new nondimensional parameter, Scf, was introduced to estimate wear rate of ceramics. This new nondimentional parameter consists of contact pressure, surface defect of contact material, frictional coefficient and fracture toughness.

SiAlON Bulk Glasses and Their Role in Silicon Nitride Grain Boundaries: Composition-Structure-Property Relationships

  • Hampshire, Stuart;Pomeroy, Michael J.
    • Journal of the Korean Ceramic Society
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    • v.49 no.4
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    • pp.301-307
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    • 2012
  • SiAlON glasses are silicates or alumino-silicates, containing Mg, Ca, Y or rare earth (RE) ions as modifiers, in which nitrogen atoms substitute for oxygen atoms in the glass network. These glasses are found as intergranular films and at triple point junctions in silicon nitride ceramics and these grain boundary phases affect their fracture behaviour. This paper provides an overview of the preparation of M-SiAlON glasses and outlines the effects of composition on properties. As nitrogen substitutes for oxygen in SiAlON glasses, increases are observed in glass transition temperatures, viscosities, elastic moduli and microhardness. These property changes are compared with known effects of grain boundary glass chemistry in silicon nitride ceramics. Oxide sintering additives provide conditions for liquid phase sintering, reacting with surface silica on the $Si_3N_4$ particles and some of the nitride to form SiAlON liquid phases which on cooling remain as intergranular glasses. Thermal expansion mismatch between the grain boundary glass and the silicon nitride causes residual stresses in the material which can be determined from bulk SiAlON glass properties. The tensile residual stresses in the glass phase increase with increasing Y:Al ratio and this correlates with increasing fracture toughness as a result of easier debonding at the glass/${\beta}-Si_3N_4$ interface.

A Study on Sintering and Mechanical Properties of $Si_3N_4$ (질화규소의 소결 및 기계적 성질에 관한 연구)

  • 이회동;이준근
    • Journal of the Korean Ceramic Society
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    • v.21 no.4
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    • pp.361-365
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    • 1984
  • This study has been carried out to sinter silicon nitride with additives and to show the effect of surface finishments on its strength and Weibull modulus which are two most important factors for its applications into structural ceramics. Silicon nitride was sintered with the additions of $Al_2O_3$ and $Y_2O_3$ under pressureless cond-ition. The optimum properties were obtained by sintering at 1, 75$0^{\circ}C$ for 3hrs under $N_2$ atmosphere and the strength showed 6, 500kg/$cm^2$ at room temperature and 3, 300kg/$cm^2$ at 120$0^{\circ}C$. The effects of surface treatment on the strength of sintered $Si_3N_4$ were studied and the results showed that fine surface treatment increased the strength by up to 50% The Weibull analysis showed that its modulus was increased with increasing fineness of surface finishments. It was concluded that the mechanical properties of sintered silicon nitride could be improved by fine surface grinding which implied the brittle-fracture nature of sintered silicon nitride.

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Bridging Effect and Fatigue Crack Growth of Silicon Nitride (질화규소의 피로균열진전과 입자가교효과)

  • 유성근
    • Journal of the Korean Ceramic Society
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    • v.33 no.11
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    • pp.1203-1208
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    • 1996
  • Crack growth tests on silicon nitride have been made to clarify the crack growth characteristics under static and cyclic loading. Under constant K(K: stress intensity factor) static loading the crack growth rate in silicon nitride decreases with increasing crack extension and is finally arrested. The cack growth resistiance is largely reduced by the application of stress cycling and though the crack growth resistiacne increases with increasing of crack extension the increasing rate is much smaller under cyclic loading than under static loading.

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Injection Molding of Silicon Nitride Powders Treated with Coupling Agents (커플링제로 처리된 질화규소 분말의 사출성형)

  • 송휴섭
    • Journal of the Korean Ceramic Society
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    • v.30 no.2
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    • pp.131-138
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    • 1993
  • The effects of silane coupling agents on the injection molding process were investigated using silicone nitride mixtrues with a binder system containing polypropylene as a major binder (55vol% solid loading). The formation of bonding between silicon nitride powder and coupling agents was confirmed through the analyses of powder surface. The use of coupling agents improved mixing characteristics judged by the torque change during mixing process. the coupling agents also reduced molten viscosity of the mixture considerably, which is a main factor to determine the flow of the mixture. However, the bonding between coupling agents and polymers had a negative effect on the debinding process by retarding the thermal decomposition.

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Anti-reflection Coating of Silicon Nitride Film for Solar Cell by RF Magnetron Sputtering (RF 마그네트론 스퍼터링을 이용한 태양전지용 질화 실리콘 반사방지막)

  • Choi, Kyoon;Choi, Eui-Seok;Hwang, Jin-Ha;Lee, Soo-Hong
    • Journal of the Korean Ceramic Society
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    • v.44 no.10
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    • pp.585-588
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    • 2007
  • Silicon nitride films for an anti-reflection coating were deposited on silicon via RF magnetron sputtering using a $Si_3N4$ target. The best result was obtained at the sputtering condition of 340 W RF power, 5 mtorr Ar atmosphere, $100^{\circ}C$ substrate temperature. The films showed 7.9% reflectance minimum with 2.35 refractive index. 0.21 absorption coefficient at 66.6 nm thickness. The surface morphology showed a smooth and dense film with good adhesion to silicon surface.