• 제목/요약/키워드: Silicon Nanoparticles

검색결과 111건 처리시간 0.025초

하이브리드 플라즈마 입자가속 충격퇴적(Hybrid Plasma - Particle Accelerating Impact Deposition, HP-PAID) 프로세스에 의한 Si 나노구조 코팅층의 제조 및 특성평가 (Synthesis of Nanostructured Si Coatings by Hybrid Plasma-Particle Accelerating Impact Deposition (HP-PAID) and their Characterization)

  • 이형직;권혁병;정해경;장성식;윤상옥;이형복;이홍림
    • 한국세라믹학회지
    • /
    • 제40권12호
    • /
    • pp.1202-1207
    • /
    • 2003
  • 최근 개발된 하이브리드플라즈마 가속입자충격 프로세스를 이용하여 기상의 TEOS(tetraethoxysilane, (C$_2$ $H_{5}$O)$_4$Si)를 Ar-hybrid plasma 환경 하에 분사하는 방법으로 나노구조(nanostructured) Si 코팅 합성에 대해서 연구하였다. 반응가스와 함께 플라즈마제트는 노즐을 통해서 챔버속으로 700 torr정도에서 10 torr정도로 압력 강하를 동반하며 확장되었다. 노즐의 초중단부에서 핵생성 및 입성장한 초미세입자는 노즐의 하단의 자유 제트에서 가속되어 온도조절 기판위에 관성 충격에 의해 퇴적되어 10nm 이하의 비정질 실리콘 코팅층이 형성되었다. 퇴적된 비정질 코팅은 Ar분위기의 tube로에서 열처리 되었는데 90$0^{\circ}C$에서 30분간 열처리하여 결정화가 시작되었고, 이때 시편의 입자크기는 TEM을 통하여 10nm 이하로 유지됨을 알 수 있었다. 또한 라만분광기로 분석한 결과 이동치는 2.39$cm^{-1}$ /이며 반감폭은 5.92$cm^{-1}$ /으로 피크 이동치로 도출한 평균입자크기 7nm값과 일치하였으며, 특히 PL 피크는 398nm에서 강한 피크를 나타내어 3∼4 nm의 극미세 나노입자도 포함하고 있음을 알 수 있었다.

Transparent Nano-floating Gate Memory Using Self-Assembled Bismuth Nanocrystals in $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) Pyrochlore Thin Films

  • 정현준;송현아;양승동;이가원;윤순길
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2011년도 추계학술발표대회
    • /
    • pp.20.1-20.1
    • /
    • 2011
  • The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

  • PDF

금 나노입자 촉매를 이용한 단결정 실리콘의 전기화학적 식각을 통한 무반사 특성 개선 (Improved Antireflection Property of Si by Au Nanoparticle-Assisted Electrochemical Etching)

  • 고영환;주동혁;유재수
    • 한국진공학회지
    • /
    • 제21권2호
    • /
    • pp.99-105
    • /
    • 2012
  • 금 나노입자 촉매를 이용한 전기화학적 식각법에 의해 실리콘 표면에 짧은 시간의 효과적인 텍스쳐링을 통한 나노구조를 제작하여 무반사 특성을 조사하였다. 실험을 위해, 열증발증착법과 급속열처리법을 이용하여 단결정 실리콘 표면에 20 nm에서 150 nm 크기의 금 나노입자를 형성하였고, 습식식각을 위해 금 나노입자가 코팅된 실리콘을 과산화수소와 불화수소가 포함된 식각용액에 1분 동안 담가두었다. 전기화학적 습식식각을 확인하기위해, 금 나노입자가 코팅된 실리콘을 음극으로 각각 -1 V와 -2 V의 전압을 인가하여 식각깊이와 반사율 스펙트럼을 비교하였다. 태양광 스펙트럼(air mass 1.5)을 고려하여 태양가중치 반사율을 계산한 결과, 전압을 인가하지 않고 식각된 실리콘 표면의 반사율이 25.8%인 반면, -2 V의 전압을 인가하여 8.2%로 반사율을 크게 줄일 수 있었다.

Nano-Floating Gate Memory Devices with Metal-Oxide Nanoparticles in Polyimide Dielectrics

  • Kim, Eun-Kyu;Lee, Dong-Uk;Kim, Seon-Pil;Lee, Tae-Hee;Koo, Hyun-Mo;Shin, Jin-Wook;Cho, Won-Ju;Kim, Young-Ho
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제8권1호
    • /
    • pp.21-26
    • /
    • 2008
  • We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.

Interfacial Layer Control in DSSC

  • Lee, Wan-In
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
    • /
    • pp.75-75
    • /
    • 2011
  • Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

  • PDF

Synthesis of Core/Shell Graphene/Semiconductor Nanostructures for Lithium Ion Battery Anodes

  • 신용승;장현식;임재영;임세윤;이종운;이재현;;허근;김태근;황성우;황동목
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
    • /
    • pp.288-288
    • /
    • 2013
  • Lithium-ion battery (LIB) is one of the most important rechargeable battery and portable energy storage for the electric digital devices. In particular, study about the higher energy capacity and longer cycle life is intensively studied because of applications in mobile electronics and electric vehicles. Generally, the LIB's capacity can be improved by replacing anode materials with high capacitance. The graphite, common anode materials, has a good cyclability but shows limitations of capacity (~374 mAh/g). On the contrary, silicon (Si) and germanium(Ge), which is same group elements, are promising candidate for high-performance LIB electrodes because it has a higher theoretical specific capacity. (Si:4200 mAh/g, Ge:1600 mAh/g) However, it is well known that Si volume change by 400% upon full lithiation (lithium insertion into Si), which result in a mechanical pulverization and poor capacity retention during cycling. Therefore, variety of nanostructure group IV elements, including nanoparticles, nanowires, and hollow nanospheres, can be promising solution about the critical issues associated with the large volume change. However, the fundamental research about correlation between the composition and structure for LIB anode is not studied yet. Herein, we successfully synthesized various structure of nanowire such as Si-Ge, Ge-Carbon and Si-graphene core-shell types and analyzed the properties of LIB. Nanowires (NWs) were grown on stainless steel substrates using Au catalyst via VLS (Vapor Liquid Solid) mechanism. And, core-shell NWs were grown by VS (Vapor-Solid) process on the surface of NWs. In order to characterize it, we used FE-SEM, HR-TEM, and Raman spectroscopy. We measured battery property of various nanostructures for checking the capacity and cyclability by cell-tester.

  • PDF

Improvement of Fast-Growing Wood Species Characteristics by MEG and Nano SiO2 Impregnation

  • DIRNA, Fitria Cita;RAHAYU, Istie;ZAINI, Lukmanul Hakim;DARMAWAN, Wayan;PRIHATINI, Esti
    • Journal of the Korean Wood Science and Technology
    • /
    • 제48권1호
    • /
    • pp.41-49
    • /
    • 2020
  • Jabon (Anthocephalus cadamba) is a fast-growing wood species that is widely utilized for light construction and other purposes in Indonesia. The objectives of the current study were to determine the effects of monoethylene glycol (MEG) and SiO2 nanoparticles (nano SiO2) impregnation treatment on the dimensional stability and density of jabon wood and to identify the characteristics of impregnated jabon wood. Wood samples were immersed in water (as untreated), MEG, 0.5% MEGSiO2, then impregnated by applying 0.5 bar of vacuum for 60 min, and then applying 2.5 bar of pressure for 120 min. The results showed that impregnation with MEG and Nano SiO2 had a significant effect on the dimensional stability of jabon wood. Polymers can fill cell walls in wood indicated by increasing weight percentgain, antiswelling efficiency, bulking effect, and density, then decreasing in water uptake value. Jabon wood morphology by using SEM showed that MEGSiO2 polymers can cover part of the pitsin the wood vessel wall of jabon. This finding was reinforced by EDX results showing that the silicon content was increased due to the addition of SiO2 nano. The XRD diffraction pattern indicated that MEGSiO2 treatment increased the degree of crystallinity in wood samples. Overall, treatment with 0.5% MEGSiO2 led to the most improvement in the dimensional stability of 5-year-old jabon wood in this study.

Enhancement of Photoluminescence by Ag Localized Surface Plasmon Resonance for Ultraviolet Detection

  • Lyu, Yanlei;Ruan, Jun;Zhao, Mingwei;Hong, Ruijin;Lin, Hui;Zhang, Dawei;Tao, Chunxian
    • Current Optics and Photonics
    • /
    • 제5권1호
    • /
    • pp.1-7
    • /
    • 2021
  • For higher sensitivity in ultraviolet (UV) and even vacuum ultraviolet (VUV) detection of silicon-based sensors, a sandwich-structured film sensor based on Ag Localized Surface Plasmon Resonance (LSPR) was designed and fabricated. This film sensor was composed of a Ag nanoparticles (NPs) layer, SiO2 buffer and fluorescence layer by physical vapour deposition and thermal annealing. By tuning the annealing temperature and adding the SiO2 layer, the resonance absorption wavelength of Ag NPs matched with the emission wavelength of the fluorescence layer. Due to the strong plasmon resonance coupling and electromagnetic field formed on the surface of Ag NPs, the radiative recombination rate of the luminescent materials and the number of fluorescent molecules in the excited state increased. Therefore, the fluorescent emission intensity of the sandwich-structured film sensor was 1.10-1.58 times at 120-200 nm and 2.17-2.93 times at 240-360 nm that of the single-layer film sensor. A feasible method is provided for improving the detection performance of UV and VUV detectors.

유기박막트랜지스터 응용을 위한 탄소가 도핑된 몰리브덴 박막의 특성 (Characteristics of Carbon-Doped Mo Thin Films for the Application in Organic Thin Film Transistor)

  • 김동현;박용섭
    • 한국전기전자재료학회논문지
    • /
    • 제36권6호
    • /
    • pp.588-593
    • /
    • 2023
  • The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (Ion/Ioff) showed 0.15 cm2/V·s, -5.6 V, and 7.5×104, respectively.

리튬이차전지 양극 분말 소재 위 탄소나노튜브의 직접 성장 거동 고찰 (Investigation of direct growth behavior of carbon nanotubes on cathode powder materials in lithium-ion batteries)

  • 한현호;이종환;정구환
    • 한국표면공학회지
    • /
    • 제57권1호
    • /
    • pp.22-30
    • /
    • 2024
  • This study reports a direct growth of carbon nanotubes (CNTs) on the surface of LiCoO2 (LCO) powders to apply as highly efficient cathode materials in lithium-ion batteries (LIB). The CNT synthesis was performed using a thermal chemical vapor deposition apparatus with temperatures from 575 to 625 ℃. Ferritin molecules as growth catalyst of CNTs were mixed in deionized (DI) water with various concentrations from 0.05 to 1.0 mg/mL. Then, the LCO powders was dissolved in the ferritin solution at a ratio of 1g/mL. To obtain catalytic iron nanoparticles on the LCO surface, the LCO-ferritin suspension was dropped in silicon dioxide substrates and calcined under air at 550℃. Subsequently, the direct growth of CNTs on LCO powders was performed using a mixture of acetylene (10 sccm) and hydrogen (100 sccm) for 10 min. The growth behavior was characterized by scanning and transmission electron microscopy, Raman scattering spectroscopy, X-ray diffraction, and thermogravimetric analysis. The optimized condition yielding high structural quality and amount of CNTs was 600 ℃ and 0.5 mg/mL. The obtained materials will be developed as cathode materials in LIB.