• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.118-119
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• 2009

This paper presents the feature profile evolution silicon deep trench etching, which is very crucial for the commercial wafer process application. The silicon deep trenches were etched with the SF6 gas & Hbr gas based process recipe. The optimized silicon deep trench process resulted in vertical profiles (87o~90o) with loading effect of < 1%. The process recipes were developed for the silicon deep trench etching applications. This scheme provides vertically profiles without notching of top corner was observed. In this study, the production of SF6 gas based silicon deep trench etch process much more strongly than expected on the basis of Hbr gas trench process that have been investigated by scanning electron microscope (SEM). Based on the test results, it is concluded that the silicon deep trench etching shows the sufficient profile for practical MOS FET silicon deep trench technology process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.147-151
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• 2000

This paper presents the electrochemical etch-stop characteristics of single-crystal silicon in a tetramethyl ammonium hyciroxide(TMAH):isopropyl alcohol(IPA):pyrazine solution. Addition of pyrazine to a TMAH:IPA etchant increases the etch-rate of (100) silicon, thus the elapsed time for etch-stop was shortened. The current-voltage(I-V) characteristics of n- and p-type silicon in a TMAH:IPA:pyrazine solution were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type silicon, respectively, were obtained and applied potential was selected between n- and p-type silicon PP. The electrochemical etch-stop is applied to the fabrication of 801 microdiaphragms having $20\;{\mu}m$ thickness on a 5-inch silicon wafer. The averge thicknesses of 801 microdiaphragms fabricated on the one wafer were $20.03\;{\mu}m$ and standard deviation was ${\pm}0.26{\mu}m$. The silicon surface of the etch-stopped microdiaphragm was extremely flat without noticeable taper or other nonuniformities. The benefits of the electrochemical etch-stop in a TMAH:IPA:pyrazine solution become apparent when reproducibility in the microdiaphragm thickness for mass production is considered. These results indicate that the electrochemical etch-stop in a TMAH:IPA:pyrazine solution provides a powerful and versatile alternative process for fabricating high-yield silicon microdiaphragms.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.791-792
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• 2006

In motor design, an important factor is the content of silicon in coss material, which can effect the saturation of magnetic circuit and coss loss. While the content of silicon is high, the core loss will be reduced. At the same time, in order to assure the effective flux, the magnetizing current must be increased and then the copper loss becomes higher. Therefore the material with high content of silicon, which is used in the motor, can not always give the high efficiency. In this paper flux linkage of two different material s10 and s60 is compared according to the operating region and then exciting current to obtain same flux is estimated. By comparing core loss and copper loss between two material with the estimated current and flux linkage, this paper presents a criterion in determining the material for higher efficiency

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.303-307
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• 2007

This paper investigated the effect of the pad buffing process on the material removal characteristics and pad stabilization during silicon chemical mechanical polishing. The pads surface were controlled by the buffing process using a buffer made by the sandpaper. The buffing process is based on abrasive machining by using a high speed sandpaper. The controlled pad by the buffing process show less deformation deviation and stable material removal rate during the CMP process. In addition, the controlled pad ensure better uniformity of removal rate than comparative pads. As a result of monitoring, the controlled pad by the buffing process demonstrated constant and stable friction force signals from initial polishing stage. Therefore, the tufting process could control the pad surface to be uniform and improve the performance of the polishing pad.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.792-796
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• 2002

In this work, porous silicon(PS) layer is used as a sensing material to detect organic gases. To do this, PS sensors with membrane structure are fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon, and PS layer formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured against ethanol (called alcohol), methanol and acetone gases evaporated from 0.1 to 0.5% solution concentrations at $36^{\circ}C$. As the result, all curves showed rectifying behavior due to a diode structure between Si and PS, and the conductance of sensor devices increased largely with the organic solution concentration at high voltage of 5V.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.861-862
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• 2006

The suitable tools for CGI material has not been developed yet because of high hardness, high toughness and very low machininability compared to the grey cast iron. And the tool life has been decreased as the contents of Ti in CGI material. From this research, we were able to do the high speed machining by using high toughness silicon nitride ceramic tools. The silicon nitride ceramic tool grade was specially designed and prepared with microstructure of elongated grains with higher aspect ratio (c/a) than conventional one.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.364-369
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• 2000

Silicon nitride with adding La$_2$O$_3$ was sintered by gas pressure sintering (GPS) technique at $1950^{\circ}C$, in $N_2$ gas at 3 MPa, for 2h. Mechanical properties such as hardness, flexural strength, and fracture toughness were determined as a function of the GPS holding time and the contents of La$_2$O$_3$ in silicon nitride. Also machinability of silicon nitride ball with various GPS holding time and amount of La$_2$O$_3$ was evaluated by magnetic fluid grinding (MFG) method. In this study it was found that machinability was influenced significantly with La$_2$O$_3$ contents. However, the different GPS holding time did not affect the machinability very much.

• Current Photovoltaic Research
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• v.6 no.3
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• pp.86-90
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• 2018

To generate more current in crystalline silicon solar cells, surface texturing is adopted by reducing the surface reflection. Conventionally, random pyramid texturing by the wet chemical process is used for surface texturing in crystalline silicon solar cell. To achieve higher efficiency of solar cells, well ordered inverted pyramid texturing was introduced. Although its complicated process, superior properties such as lower reflectance and recombination velocity can be achieved by optimizing the process. In this study, we investigated optical and passivation properties of inverted pyramid texture. Lifetime, implied-Voc and reflectance were measured with different width and size of the texture. Also, effects of chemical rounding at the valley of the pyramid were observed.

• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.487-492
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• 2021

In this study, the electrochemical properties of pitch coated silicon sheets/graphite anode materials were investigated. Using NaCl as a template, silicon sheets were prepared through the stöber method and the magnesiothermic reduction methode. In order to synthesize the anode composite, the silicon sheets and graphite were combined with SDBS. The pitch coated silicon sheets/graphite was synthesized using THF as a solvent for the anode material composite. The physical properties of the prepared anode composites were analysed by XRD, SEM, EDS and TGA. The electrochemical performances of the prepared anode composites were performed by the current charge/discharge, rate performance, cyclic voltammetry and EIS tests in the electrolyte LiPF₆ dissolved solvents (EC:DMC:EMC=1:1:1 vol%). As the silicon composition of silicon sheets/graphite composite material increased, the discharge capacity also increased, but the cycle stability tended to decrease. The anode material of pitch coated silicon sheets/graphite composite (silicon sheets:graphite=3:7 weight ratio) showed the initial discharge capacity of 1228.8 mAh/g and the capacity retention ratio of 77% after 50 cycles. From these results, it was found that the cycle stability of pitch coated silicon sheets/graphite was improved.