• Journal of the Korean Society for Precision Engineering
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• v.19 no.6
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• pp.176-183
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• 2002

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. The mold for forming the barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing processes such as screen printing, sand-blasting and photosensitive glass methods. The mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper , Stripes of grooves of which width 48$\mu$m, depth 124$\mu$m , pitch 274$\mu$m was acquired by machining of single crystal silicon with dicing saw blade. Maximum roughness of the bottom of the grooves was 59.6 nm Ra in grooving Si. Barrier ribs were farmed with silicone rubber mold, which is transferred from grooved Si forming hard mold. Silicone rubber mold has the elasticity, which enable to accommodate the waviness of lower glass plate of PDP. The methods assisted by the microwave and UV was adopted for reducing the forming time of glass paste.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.135-140
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• 1997

The influences of ZrB$_2$ additions to SiC on microstructural, DDM(Electrical Discharge Machining), mechanical and electrical properties were investigated. composites were prepared by adding 15, 30, 45 vol.% ZrB$_2$particles as a second phase to SiC matrix. SiC-ZrB$_2$ composites obtained by hot pressing for high temperature structural application were fully dense with the relative densities over 99%. The fracture toughness of the composites were increased with the ZrB$_2$contents. In case of composite containing 30vol.% ZrB$_2$, the flexural strength and fracture toughness showed 45% and 60% increase, respectively compared to that of monolithic SiC sample. The electrical resistivities of SiC-ZrB$_2$ composites decreased significantly with the ZrB$_2$ contents. The electrical resistivity of SiC-30vol.% ZrB$_2$ composite showed 6.50$\times$10$^{-4}$ $\Omega$.cm. Cutting velocity of EDM of SiC-ZrB$_2$ composites are directly proportional to duty factor of pulse width. Surface roughness, however, are not all proportional to pulse width. Higher-flexural strength composites show a trend toward smaller crater volumes, leaving a smoother surface; the average surface roughness of the SiC-ZrB$_2$ 15 vol.% composite with the flexural strengthe of 375㎫ was 3.2${\mu}{\textrm}{m}$, whereas the SiC-ZrB$_2$ 30.vol% composite of 457㎫ was 1.35${\mu}{\textrm}{m}$. In the SEM micrographs of the fracture surface of SiC-ZrB$_2$ composites, the SiC-ZrB$_2$ two phases are distinct; the white phase is the ZrB$_2$and the gray phase is the SiC matrix. In the SEM micrographs of the EDM surface, however, these phases are no longer distinct because of thicker recast layer of resolidified-melt-formation droplets present. It is shown that SiC-ZrB$_2$ composites are able to be machined without surface cracking.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.1
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• pp.36-41
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• 2017

In this paper, $Si_3N_4/hBN$ ceramics with various hexagonal boron nitride (hBN) contents (0, 10, 20, or 30 wt%) were fabricated via spark plasma sintering (SPS) at $1500^{\circ}C$, 50MPa, and 10m holding time. The material properties such as the relative density, hardness, and fracture toughness were systematically evaluated according to the hBN content in the $Si_3N_4/hBN$ ceramics. The results show that relative density, hardness, and fracture toughness continuously decreased as the hBN content increased. In addition, peak-step drilling (with tool diameter $500{\mu}m$) was performed to observe the effects of hBN content in micro-hole shape and cutting force. A machined hole diameter of $510{\mu}m$ (entrance) and stable cutting force were obtained at 30 wt% hBN content. Consequently, $Si_3N_4/30wt%$ hBN ceramic is a feasible material upon which to apply semi-conductor components, and this study is very meaningful for determining correlations between material properties and machining performance.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.5
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• pp.171-176
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• 2001

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. Mold for forming barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing process such as screen printing, sand-blasting and photosensitive glass methods. Mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper, Stripes of grooves of which width 48${\mu}{\textrm}{m}$ and 270${\mu}{\textrm}{m}$, depth 124${\mu}{\textrm}{m}$, pitch 274${\mu}{\textrm}{m}$ was acquired by machining hard and brittle materials of WC, Silicon, Alumina with dicing saw blade. Maximum roughness of the bottom and sidewall of the grooves was respectively 120nm, 287nm in grooving WC. Maximum tilt angle caused by difference between upper-most width and lower-most width was 2$^{\circ}$. Maximum Radius of bottom curvatures was 7.75${\mu}{\textrm}{m}$. This results satisfies the specification for barrier ribs of 50 inch XGA PDP if the groove form of mold was fully transferred to the barrier ribs. Barrier ribs were formed with Silicone rubber mold, which is transferred from grooved hard materials. Silicone rubber mold has elasticity accommodating the waveness of lower glass plate of PDP.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.