• 제목/요약/키워드: Silicon Carbide Whiskers

검색결과 13건 처리시간 0.016초

Effect of Silicon Nitride Whisker Content on the Flexural Strength of Silicon Nitride-Boron Nitride-Silicon Carbide Multi-Layer Composites

  • Park, Dong-Soo;Cho, Byung-Wook
    • 한국세라믹학회지
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    • 제40권9호
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    • pp.832-836
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    • 2003
  • Multi-layer ceramic composites were prepared by tape casting followed by hot pressing using silicon nitride layer with silicon nitride whiskers, silicon nitride layer with silicon carbide particles and boron nitride-alumina layer. The whiskers were aligned during the casting. As the whisker content of the silicon nitride layer was increased up to 10 wt%, the flexural strength of the multi-layer composite was increased. However, further increase of the whisker content in the layer resulted in a rapid decrease of the strength of the composite. The results suggest that the strength of multi-layer ceramic composite showing non-catastrophic failure behavior can be significantly improved by incorporating the aligned whiskers in the layers.

폐슬러지 Si 분말을 이용한 SiC 제조 (SiC Synthesis by Using Sludged Si Power)

  • 최미령;김영철;장영철
    • 마이크로전자및패키징학회지
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    • 제10권3호
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    • pp.67-71
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    • 2003
  • 실리콘 주괴(ingot)에서 실리콘 웨이퍼를 제조할 때 사용되는 슬러리는 SiC 연마재와 절삭유를 포함한다. 실리콘 웨이퍼 제조 시 생긴 폐슬러지에서 SiC 연마재와 절삭유는 분리되어 재활용된다. 본 연구는 폐슬러지 Si 분말에 C분말을 혼합하여 SiC를 합성하는 것에 관한 것이다. 다양한 크기의 SiC 분말과 휘스커가 제조되었으며 기존의 휘스커의 크기보다 작은 나노미터 크기의 휘스커도 발생하였다. 일반적으로 휘스커는 금속 불순물을 첨가하여 제조되는데, 본 연구에서 나노미터 크기의 휘스커 발생은 폐슬러지에 첨가되어있는 미세한 크기의 금속불순물의 영향으로 판단된다.

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카올린의 환원 열탄화법에 의한 베타 탄화규소 휘스커의 합성 (Synthesis of $\beta$-SiC Whiskers by the Carbothermal Reduction of Kaolin)

  • 오세정;류종화;조원승;최상욱
    • 한국세라믹학회지
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    • 제35권12호
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    • pp.1249-1256
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    • 1998
  • ${\beta}$-Silicon carbide(${\beta}$-SiC) whiskers could be synthesized by the carbothermal reduction of kaolin at tem-peratures between 1400 and 1500$^{\circ}C$. The whiskers were grown up to about 1150 of aspect ratio by VS mechanism (showing tapering tips) and to about 45 of that by VLS mechanism (showing round droplet tips) respectively. Hydrocarbon like methane in the reaction atmosphere promoted the formation of gaseous il-icon monoxide(SiO) from silicon dioxide(SiO2) and subsequently reacted with it to form whiskers. The for-mation of ${\beta}$-SiC whiskers increased with increasing carbon content(to 30 wt%) and reaction temperatures. The max. yield of ${\beta}$-SiC whiskers was 15% at 1500$^{\circ}C$ under 20%CH4/80%H2.

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탄화규소 휘스커의 (II): 적층결함 (Synthesis of Silicon Carbide Whiskers (II): Stacking Faults)

  • 최헌진;이준근
    • 한국세라믹학회지
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    • 제36권1호
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    • pp.36-42
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    • 1999
  • 2단계 열탄소환원법으로 탄화규소 휘스커를 기상-고상, 2단계, 기상-액상-고상 성장기구로 각각 합성하였다. 그리고 휘스커에 있는 적층결합을 X-ray와 투과전자현미경을 이용하여 분석하였다. 탄화규소 휘스커에 있는 적층결함은 휘스커의 지름과 상관관계가 있는 것으로 나타났다. 즉, 기상-고상, 2단계 성장, 기상-액상-고상 성장기구에 상관없이 지름이 1$\mu\textrm{m}$이하로 작아지는 경우 적층결합이 많아지고, 기상-액상-고상 기구로 성장한 지름이 2$\mu\textrm{m}$보다 큰 경우 적층결함이 거의 없는 것으로 나타났다. 이같은 현상은 휘스커 지름이 작아짐에 따라 휘스커의 비표면적이 증가하는 때문인 것으로 판단되었다.

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에치슨법에 의한 탄화규소 휘스카의 성장과 특성분석 (Formation and Characterization of Silicon Carbide Whiskers by Acheson Method)

  • 주한용;김형준
    • 한국세라믹학회지
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    • 제27권1호
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    • pp.136-146
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    • 1990
  • Whiskers of SiC were grown from the mixture of silica and graphite powders by Acheson method(direct heating method). The structrua, morphological and chemical characterizations have been performed by X-ray diffractometer(XRD), transmission electron microscopy(TEM), optical microscopy(OM), scanning electron microscopy(SEM), X-ray photoelectron spectroscopy(XPS) and energy dispersive spectrometer(EDS). The growth mechanism of SiC whiskers is also discussed.

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Texture Development in Liquid-Phase-Sintered β -SiC by Seeding with β -SiC Whiskers

  • Kim, Won-Joong;Roh, Myong-Hoon
    • 한국세라믹학회지
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    • 제43권3호
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    • pp.152-155
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    • 2006
  • Silicon carbide ceramics seeded with 10-30 wt% SiC whiskers are fabricated by hot pressing and annealing. A quantitative texture analysis including calculation of the Orientation Distribution Function (ODF) is used for obtaining the degrees of preferred orientation of the fabricated samples. The microstructure and crystallographic texture are discussed with respect to the effect of ${\beta}-SiC$ whisker seeds on the resulting fracture toughness values. The SEM microstructures and the texture data reveal a correlation between texture and fracture toughness anisotropy.

Synthesis of Silicon Carbide Nanowhiskers from Coconut Fibres and Sol-Gel Derived Silica

  • Raman, V.;Bhatia, G.;Mishra, A.;Saha, M.;Sengupta, P.R.;Srivastava, A.K.
    • Carbon letters
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    • 제7권3호
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    • pp.166-170
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    • 2006
  • Silicon carbide whiskers ($SiC_w$) having the diameter in the range of 20-80 nm were synthesised from coconut fibres through sol-gel process. The coconut fibres were impregnated with tetraethoxysilane and methyltriethoxysilane derived sol and pyrolyzed at $1400^{\circ}C$ in argon. X-ray of the pyrolyzed samples showed the formation of ${\beta}$-SiC.

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탄화규소 휘스커의 합성(I) : 반응기구의 율속반응 (Synthesis of Silicon Carbide Whiskers (I) : Reaction Mechanism and Rate-Controlling Reaction)

  • 최헌진;이준근
    • 한국세라믹학회지
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    • 제35권12호
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    • pp.1329-1336
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    • 1998
  • A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

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$Zr(SO_4)_2$ 수용액을 이용한 SiC 휘스커의 지르코니아 코팅 (Zirconia Coating of SiC Whiskers Using the Aqueous Solutions of Zr(SO4)2)

  • 김덕준;김환
    • 한국세라믹학회지
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    • 제33권12호
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    • pp.1380-1386
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    • 1996
  • The effects of urea addition and reaction conditions were examined in the prepareation of zirconia coated SiC whiskers through surface precipitation taking place during high-temperature aging of Zr(SO4)2 solutions containing the whiskers. More dense zirconia-hydrate was precipitated on the surfaces of the whiskers in the presence of urea. The ratio of the concentration of Zr(SO4)2 to the amount of added whiskers was the most important factor to confine the precipitation of zirconia-hydrate only at the surfaces of the whiskers The from of the coating layers was unchanged after heat-treatment leading to the dehydration and crystallization of the layers.

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The Effect of Chemical Vapor Infiltrated SiC Whiskers on the Change in the Pore Structure of a Porous SiC Body

  • Joo, Byoung-In;Park, Won-Soon;Choi, Doo-Jin;Kim, Hai-Doo
    • 한국세라믹학회지
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    • 제43권4호
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    • pp.199-202
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    • 2006
  • In this study, SiC whiskers were grown on a porous SiC diesel particulate filter for nanoparticle filtering. To grow the whiskers at the inner pore without closing the pores, we used chemical vapor infiltration with a solution source and a dilute. As the deposition time increased, the whiskers grew and formed a network structure. After 180 min of deposition, the mean diameter of the whiskers was 174 nm and the compressive strength was 58.4 MPa. The pores shrank from $10{\mu}m\;to\;0.4{\mu}m$ and, because the whiskers filed the inner pores, the gradient of permeability decreased as the deposition time increased. However, by using the network structure of whiskers deposited for 120 min and 180 min, we obtained a diesel particulate filter with pores of $0.98{\mu}m\;and\;0.4{\mu}m$, respectively. Furthermore, the filter shows better permeability than a porous body with pores of $1{\mu}m$. In short, by filtering the nanoparticulate materials, the network structure of whiskers improves the strength, reduces the pore size and minimizes the permeability drop.