• Proceedings of the KSME Conference
• /
• 2001.11a
• /
• pp.27-31
• /
• 2001

Hi-Nicalon SiC fiber reinforced SiC composites (SiC/SiC) have been fabricated by the reaction sintering process. Braided Hi-Nicalon SiC fiber with double interphases of BN and SiC was used in this composite system. The microstructures and the mechanical properties of reaction sintered SiC/SiC composites were investigated through means of electron microscopies (SEM, TEM, EDS) and bending tests. The matrix morphology of reaction sintered SiC/SiC composites was composed of the SiC phases that the composition of the silicon and the carbon is different. The TEM analysis showed that the residual silicon and the unreacted carbon were finely distributed in the matrix region of reaction sintered SiC/SiC composites. Reaction sintered SiC/SiC composites also represented proper flexural strength and fracture energy, accompanying the noncatastrophic failure behavior.

• Journal of Industrial Technology
• /
• v.5
• /
• pp.73-79
• /
• 1985

Thermodynamic calculation for the CVD of SiC from methyltrichlorosilane(MTS) was done in some range of deposition condition to identify optimum condition. The results show that the most considerable chemical species are chloride and chlorosilane for silicon source and methane and acetylene for carbon source. In order to yield single phase ${\beta}$-SiC it is believed that optimum temperature range is between 1500 and $1700^{\circ}k$. With increasing temperature, stable phase is changed from Si+SiC phase to C+SiC phase. It is believed because equilibrium concentration of silicon source decrease and equilibrium concentration of carbon source increases with increasing temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.3
• /
• pp.120-125
• /
• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.273-275
• /
• 1997

We fabricated the conventional silicon tips coated with a diamond-like carbon (DLC) film. The DLC films are prepared by the filtered cathodic vacuum arc (FCVA) technique. With increasing nitrogen content in DLC film, the work function($\phi$) and the turn-on voltage decrease and the emission current increases. This phenomenon is due to the fact that the Fermi-level moves to the conduction band by increasing nitrogen doping concentration. We have tested on the stability of the DLC film coated silicon tip during 2 hours at 500V.

• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.683-687
• /
• 1997

The purpose of this work is to develop a highly reliable solar cell based on the diamond-like carbon(DLC)/silicon heterojunction. Thin films of DLC have been deposited by employing both filtered cathodic vacuum arc(FCVA) and magnetron plasma-enhanced chemical vapor deposition(m-PECVD) systems. Structural, electrical, and optical properties of DLC films deposited are systematically analyzed as a function of deposition conditions, such as magnetic field, substrate bias voltage, gas pressure, and nitrogen content. The I-V measurement has been used to elucidate the mechanism responsible for the conduction process in the DLC/Si junction. Photoresponse characteristics of the junction are measured and its reliability against temperature and light stresses is also analyzed.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.145-152
• /
• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• Journal of the Korean Ceramic Society
• /
• v.24 no.2
• /
• pp.147-154
• /
• 1987

Silicon nitride powders were prepared by the simultaneous reduction and nitridation from powder mixtures of Kim cheon quartzite and carbon (graphite or carbon black) at1400$^{\circ}C$ for 10 hours in nitrogen atmosphere. The effects of the reaction variables on the yield of products and on the ${\alpha}$/${\beta}$ ratio were examined. The average particle size, density, and the ${\alpha}$/${\beta}$ ratio of the obtained si3N4 were 1.0$\mu\textrm{m}$, 3.10g/㎤ and 90/10, respectively. It was found that the Si3N4 powders obtained in this work were comparable to the foreign commercial products.

• Journal of the Korean institute of surface engineering
• /
• v.43 no.1
• /
• pp.36-40
• /
• 2010

The SiO vapor that was generated from a mixture of Si and $SiO_2$ was reacted at $1350^{\circ}C$ for 2 h under vacuum with carbon nanofibers to produce SiC nanofibers having an average diameter of 100~200 nm. In order to understand the gas corrosion behavior, SiC nanofibers were exposed to air up to $1000^{\circ}C$. SiC oxidized to amorphous $SiO_2$, but its oxidation resistance was inferior unlike bulk SiC, because of high surface area of nanofibers. When SiC nanofibers were exposed to Ar-1% $SO_2$ atmosphere, SiC oxidized to amorphous $SiO_2$, without forming $SiS_2$, owing to the thermodynamic stability of $SiO_2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.109-110
• /
• 2013

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1%Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small a mount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1%Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$ however decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• Journal of the Korean Ceramic Society
• /
• v.28 no.8
• /
• pp.577-584
• /
• 1991

Among various forming techniques for ceramics, we have studied the slip casting method for the binary system of SiC and carbon. The stability of the slip of silicon carbide and carbon were investigated by measurements of zeta potential, viscosity, sedimentation height, and also studied as functions of PH and amounts of dispersants. A preform of SiC and C was prepared by slip casting and heat treatment at 400∼600$^{\circ}C$ under N2 gas. The preform was reacted with Si metal at 1550$^{\circ}C$, 10-1 mmHg to give rise a reaction bonded SiC with a density of 3.0g/㎤ and a bending strength of 580 MPa.