• Journal of the Optical Society of Korea
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• v.19 no.5
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• pp.449-455
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• 2015

In this study we propose a new photonic crystal fiber (PCF) design that simultaneously offers broadband single-mode operation, high birefringence, and large normal dispersion in the optical-communication wavelength regime. The waveguide is based on a hybrid square-lattice PCF (HS-PCF) that has circular air holes of two different diameters alternating in the cladding, plus a pure silica defect at the center. The optical properties of the guided modes are analyzed numerically by the finite-element method (FEM) with a perfectly matched layer as the boundary condition. The optimized HS-PCF has a dispersion coefficient of $-601.67\;ps\;nm^{-1}\;km^{-1}$ and a high birefringence of $1.025{\times}10^{-2}$ at $1.55{\mu}m$. In addition, over the S+C+L+U wavelength bands the proposed HS-PCF with ultraflat birefringence with a slope on the order of $10^{-5}$.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.479-483
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• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.20-25
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• 2010

An integrated Mach-Zehnder interferometric sensor operating at 632.8 nm was designed and fabricated by the technology of planar rib waveguides. Rib waveguide based on silica system ($SiO_2-SiO_xN_y-SiO_2$) was geometrically designed to have single mode operation and high sensitivity. It was structured by semiconductor fabrication processes such as thin film deposition, photolithography, and RIE (Reactive Ion Etching). With the power observation, propagation loss measurement by cut-back method showed about 4.82 dB/cm for rib waveguides. Additionally the chromium mask process for an etch stop was employed to solve the core damaging problem in patterning the sensing zone on the chip. Refractive index measurement of water/ethanol mixture with this device finally showed a sensitivity of about $\pi$/($4.04{\times}10^{-3}$).

• Korean Journal of Optics and Photonics
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• v.15 no.6
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• pp.490-494
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• 2004

Bragg gratings were fabricated in Ge-doped silica planar lightwave circuits (PLC) for different writing conditions to study the growth characteristics. The refractive index modulation of the gratings grew in the PLC with total fluence F according to the power law $\Delta$n=A $F^{B}$. The characteristics of the PLC gratings formed for external cavity lasers match closely to those predicted by the power law. The oscillation spectra of the FP-LD with a Bragg grating grown in the PLC waveguide were also presented.d.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.28-29
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• 2000

Optical power splitters and/or couplers are important components for optical signal distribution between channels both in wavelength division multiplexing(WDM) systems and photonic integrated circuits(PICs). Since polarization is usually not known after propagation in an optical fiber, passive WDM components have to be polarization insensitivity, Compared to alternatives such as directional couplers or Y-junction splitters, splitters based on multimode interference(MMI) have found a growing interest in recent yens because of their desirable characteristics, such as compact size, low excess loss, wide bandwidth, polarization independence, and relaxed fabrication tolerances$^{(1)}$ . These devices have been fabricated in polymers, silica, or III-V semiconductor materials. A1 $\times$ 4 MMI power splitter on InP materials that were suitable for application in the 1.55-${\mu}{\textrm}{m}$ region$^{(2)}$ . However, the fabrication process of the structure is too complicated and the photolithography tolerance is very tight. Also, a 1 $\times$ 16 InGaAsP/InP MMI power splitter with an excess loss of 2.2dB and a splitting ratio of 1.5dB was demonstrated by using deep etching$^{(3)}$ . The deep etching of the sidewalls through the entire guide layer of the slab waveguide resulted in a number of drawbacks$^{(4)}$ . (omitted)