• Journal of Korea Society of Digital Industry and Information Management
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• v.10 no.1
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• pp.55-60
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• 2014

Today, there is increasing the elderly population in rural community, and people of returning from the urban to the rural community are demand to be of high value-added agriculture. In this time, there are required to regularization, standardization, automation, for getting of production of high value crops. In this paper, we are study for automation cultivation control system design for produce high-value crops. this system were designed of two parts that one part is measure and control unit, another part is server part for database and server side control. the main controller for measurement and control is used MC9S08AW60, server for Database and server-side control was using MySQL with CentOS. The source code of control program was coding C and compile with GCC. the functions of measurement and control unit are digital input and output each 8channels and can be scan-able of 20 Bit with 2CH/Sec. Analog Output were designed that can be output of 4-20mA or 0-5V on 4channel. The Digital input and output part were designed 8-channel, and using the high speed photo coupler and relays. We showed that system is possible to measure a 20bit data width, 2Ch/sec as 8 channel analog signals.

• The Journal of the Acoustical Society of Korea
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• v.36 no.1
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• pp.64-69
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• 2017

In this paper, we propose a single-channel speech enhancement method based on restoration of both spectral amplitudes and phases for PTT (Push-To-Talk) communication. The proposed method combines the spectral amplitude and phase enhancement to provide high-quality speech unlike other single-channel speech enhancement methods which only use spectral amplitudes. We carried out side-by-side comparison experiment in various non-stationary noise environments in order to evaluate the performance of the proposed method. The experimental results show that the proposed method provides high quality speech better than other methods under different noise conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.33-33
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• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• Proceedings of the Korean DIstribution Association Conference
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• 1999.11a
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• pp.161-177
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• 1999

Marketing channels have been characterized as social systems by the recent channel literatures. Under this assumption, many channel behavioral theories were developed by examining hypothetical relationships among several channel variables. Among them, interrelationship of channel cooperation with other variables has been one of major concerns to channel managers. From this point of view, the objective of this paper is to examine the role of cooperation in the franchise system of garments goods. In order to achieve our goal, data was collected from garment retailers and a simple random sample of 150 dealers was drawn and tested. Major findings through the data analysis are as follows : 1. Higher levels of dependence lead to higher levels of cooperation. 2. Noncoercive sources of power tends to increase intrachannel cooperation. However, the hypothesis that higher levels of coercive sources of power will lead to lower levels of cooperation was not statistically supported. 3. Another hypothesis that higher levels of conflict will lead to lower levels of cooperation was partially supported. 4. Higher levels of cooperation lead to higher levels of cooperation. In this study, data was gathered from the retail side of the franchise channel dyad for garments goods. Therefore, future research are suggested to investigate respondents of both sides(franchiser and franchisee) of the channel dyad.

• Journal of Korea Foundry Society
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• v.32 no.2
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• pp.65-74
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• 2012

In this paper, we present the results of our studies on optimal die design towards development of a vacuum die casting process to fabricate fuel cell bipolar plate with micro-channel array. Cavity and overflow shape is designed by computational filling analysis of MAGMA soft. Optimal die design consists of seven overflows at the end of cavity and three overflows at each side wall of cavity. The molten metal that passed the gate and reached the side wall flowed into the side overflow, no turbulent flow occurred, and the filling behavior and velocity distribution were uniform. In addition, partially solidified molten metal passing through the channel was perfectly eliminated by overflow without back-flow. When vacuum pressure, injection speed of low and high region was 300 mbar, 0.3 m/s and 2.5 m/s respectively with Silafont 36 die casting alloy, sound sample without casting defects was obtained. The experimental results are nearly consistent with simulation results.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.884-886
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• 2005

In this paper, we have investigated characteristics of current-voltage for double gate MOSFET with main gate and side gate. Investigated current-voltage characteristics of channel length changed len호 of channel from 1${\mu}$m to 3${\mu}$m. Also, compare and analyzed characteristics of changed of operation temperature changing current that is dignity. gate voltage could know 2V that is superior than device characteristics of current voltage characteristic in 77K acts in room temperature when approved.

• Journal of the Korean Society of Mechanical Technology
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• v.13 no.1
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• pp.105-112
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• 2011

Increasing needs for light weight and high safety in modern automobiles induced the wide application of high strength steels in automotive body structures- The main difficulty in the forming of sheet metal parts with high strength steel is the large amount of springback including sidewall curl and twist in channel shaped member parts- Among these shape defects, twist occurs frequently and requires numerous reworks on the dies to compensate the shape deviation- But until now, it seems to be no effective method to reduce the twist in the forming processes- In this study, a new forming process to reduce the twist deformation during the forming of automotive structural member was suggested- This method consists of forming and restriking of embosses on the sidewall around the stretch flanging area of the part- and was applied in the forming process design of an automotive front side inner member with high strength steel- To evaluate the effectiveness of the method, springback analysis using $Pamstampa^{tm}$ was done- Through the analysis results, the suggested method was proven to be effective in twist reduction of channel shaped parts with stretch flanging area.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2000.11c
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• pp.551-559
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• 2000

An integrated on-line inspection system was constructed with seven cameras, half mirrors to split images, 720 nm and 970 nm band pass filters, illumination chamber having several tungsten-halogen lamps, one main computer, one color frame grabber, two 4-channel multiplexors, and flat plate conveyer, etc., so that a total of seven images, that is, one color image from the top side of an apple and two B/W images from each side (top, right and left) could be captured and displayed on a computer monitor through the multiplexor. One of the two B/W images captured from each side is 720nm filter image and the other is 970nm. With this system an on-line grading software was developed to evaluate appearance quality. On-line test results to the Fuji apples that were manually fed on the conveyer showed that grading accuracies of the color, defective and shape were 95.3%, 86% and 91%, respectively. Grading time was 0.35 sec per apple on an average. Therefore, this on-line grading system could be used for inspection of the final products produced from an apple sorting system.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.335-340
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• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.