• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.328-332
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• 2012

Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.158-163
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• 2000

Six different SiC ceramics with SiO2-Re2O3 (Re=Yb, Er, Y, Dy, Gd, Sm) as sintering additives have been fabricated by hot-pressing the SiC-Re2Si2O7 compositions at 1850$^{\circ}C$ for 2 hr under a pressure of 25 MPa. The room temperature strneth and the fracture toughness of the hot-pressed ceramics were characterized and compared with those of the ceramics sintered with YAG (Y3Al5O12). Five SiC ceramics (Re=Yb, Er, Y, Dy, Gd) investigated herein showed sintered densities higher than 94% of theoretical. Tthe SiC-Re2Si2O7 compositions showed lower strength and comparable toughness to those from SiC-YAG composition, owing to the chemical reaction between SiO2 and SiC during sintering. SiC ceramics fabricated from a SiC-Y2Si2O7 composition showed the best mechanical properties of 490 MPa and 4.8 MPa$.$m1/2 among the compositions investigated herein.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.405-413
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• 1994

초고진공에서 기판 Si(111)-7$\times$7 위에 Ti:Si 또는 1:2의 조성비로 Ti와 Si을 동시증착한 후 in situ 열처리하여 TiSi2 박막을 에피택셜 성장시켰다 XRD와 XPS 분석결과 동시증착된 혼합 층에서 C49-TiSi2 박막의 성장은 핵형성에 의함을 확인하였으며 양질의 C49-TiSi2 박막은 Ti를 증착한후 Ti와 Si를 동시 증착한 (Ti+2Si)/(Ti)/Si(111)-7$\times$7구조의 시료를 초고진공에서 50$0^{\circ}C$에서 열처리하여 얻을수 있었다. 형성된 C49-TiSi2/Si(111)의 계면은 깨끗하였고 HRTEM 분석 결과 C49-TiSi2\ulcornerSi(111)의 계면은 약 10。 의 편의를 가지면서 TiSi2[211]∥Si[110] TiSi2(031)/Si(111) 의 정합성을 가졌으며 시료의 전 영 역에 에피택셜 성장되었다.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2003.05a
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• pp.294-299
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• 2003

The efficiency of complex slurry preparation route for the development of high performance RS-SiCf/SiC composites has been investigated. The green bodies for RS-SiC and RS-SiCf/SiC composite materials prior to the infiltration of molten silicon were prepared with various C/SiC complex matrix slurries, which associated with both different sizes of starting SiC particles and blending ratios of starting SiC and carbon particles. The reinforcing materials in the composite system were uncoated and C coated Tyranno SA SiC fiber. The characterization of RS-SiC and RS-SiCf/SiC composite materials was examined by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, process optimization methodology is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Journal of Powder Materials
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• v.21 no.6
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• pp.460-466
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• 2014

Al-Si-SiC composite powders with intra-granular SiC particles were prepared by a gas atomization process. The composite powders were mixed with Al-Zn-Mg alloy powders as a function of weight percent. Those mixture powders were compacted with the pressure of 700 MPa and then sintered at the temperature of $565-585^{\circ}C$. T6 heat treatment was conducted to increase their mechanical properties by solid-solution precipitates. Each relative density according to the optimized sintering temperature of those powders were determined as 96% at $580^{\circ}C$ for Al-Zn-Mg powders (composition A), 97.9% at $575^{\circ}C$ for Al-Zn-Mg powders with 5 wt.% of Al-Si-SiC powders (composition B), and 98.2% at $570^{\circ}C$ for Al-Zn-Mg powders with 10 wt.% of Al-Si-SiC powders (composition C), respectively. Each hardness, tensile strength, and wear resistance test of those sintered samples was conducted. As the content of Al-Si-SiC powders increased, both hardness and tensile strength were decreased. However, wear resistance was increased by the increase of Al-Si-SiC powders. From these results, it was confirmed that Al-Si-SiC/Al-Zn-Mg composite could be highly densified by the sintering process, and thus the composite could have high wear resistance and tensile strength when the content of Al-Si-SiC composite powders were optimized.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.509-514
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• 2006

In this study, chopped Hi-Nicalon SiC fiber Reinforced Porous Reaction Bonded SiC (RBSC) composites and it fabrication process were developed by using Si melt infiltration process. The porosity and average pore size in fabricated chopped SiC fiber reinforced porous RBSC composites were in the range of $30{\sim}40%$ and $40-90{\mu}m$, which mainly determined by the SiC powder size used as starting material and amount of residual Si in porous composites. The maximum flexural strength of chopped SiC fiber reinforced porous RBSC composite was as high as 80 MPa. The delayed fracture behavior was observed in chopped SiC fiber reinforced porous RBSC composites upon 3-point bending strength test.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.177-182
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• 2005

Large amounts of the waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of the single silicon crystal ingots. The waste SiC sludge was purified by the washing process and the purified SiC powders were used to fabricate continuously porous $SiC-Si_3N_4$ composites using a fibrous monolithic process, in which carbon, $6wt\%\;Y_2O_3-2\;wt\%\;A1_2O_3$ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives, and binder, respectively. In the burning-out process, carbon was fully removed and continuously porous $SiC-Si_3N_4$ composites were successfully fabricated. The green bodies containing SiC, Si particles and sintering additives were nitrided at $1410^{\circ}C$ in a flowing $N_2+10\%\;H_2$ gas mixture. Continuously porous composites were combined with SiC, ${\alpha}Si_3N_4,\;\beta-Si_3N_4$ and a few $\%$ of Fe phases. The pore size of the 2nd and the 3rd passed $SiC-Si_3N_4$ composites was $260\;{\mu}m$ and $35\;{\mu}m$ in diameter, respectively.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.199-207
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• 1997

$Al_2O_3$/SiC particulate composites were fabircated by pressureless sintering. The dispersed phase was SiC of which the content was varied from 1.0 to 10 vol%. Three SiC powders having different median diameters from 0.28 $\mu\textrm{m}$ to 1.9 $\mu\textrm{m}$ were used. The microstructure became finer and more uniform as the SiC content increased except the 10 vol% specimens, which were sintered at a higher temperature. Under the same sintering condition, densification as well as grain growth was retarded more severly when the SiC content was higher or the SiC particle size was smaller. The highest flexural strength obtained at 5.0 vol% SiC regardless of the SiC particle size seemed to be owing to the finer and more uniform microstructures of the specimens. Annealing of the specimens at $1300^{\circ}C$ improved the strength in general and this annealing effect was good for the specimens containing as low as 1.0 vol% of SiC. Fracture toughness did not change appreciably with the SiC content but, for the composites containing 10 vol% SiC, a significantly higher toughness was obtained with the specimen containing 1.9$\mu\textrm{m}$ SiC particles.