• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.582-588
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• 1997

Synthetic reaction of TAME, ETBE, and MTBE compounds used largely for gasoline octane number enhancer to prevent air pollution was investigated using heteropolyacid catalyst in a fixed bed flow reactor. In the synthetic reaction of TAME, ETBE and MTBE, after hetero atom being replaced with poly atom, the activity of the catalyst, $H_4SiW_{12}O_{40}$ with coordinated bond with W and an hetero atom of Si was the highest among the catalysts tested. Also the activity depended upon the metals replaced which are related to the catalyst acidity. $FeHPW_{12}O_{40}$ and $K_3PM_{o12}O_{40}$ catalysts showed high activity in TAME synthesis, while they were not effective in ETBE and MTBE synthesis. In this study catalysts showing high activity were selected and mixed with equal weight combination of $H_4SiW_{12}O_{40}$ and $Sr_2SiW_{12}O_{40}$ ;$H_4SiW_{12}O_{40}$ and $NaH_2PW_{12}O_{40}$ ; $Fe_{1.5}PW_{12}O_{40}$ and $Mg_2SiW_{12}O_{40}$ ; $Mg_2SiW_{12}O_{40}$ and $Ba_2SiW_{12}O_{40}$. The mixed heteropolyacid catalysts showed higher TBA conversion rate and better selectivity of ETBE and MTBE than the single catalysts.

• The Korean Journal of Malacology
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• v.30 no.4
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• pp.321-331
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• 2014

Patinopecten yessoensis is known to be farmed only in the northern part of the East Sea today. In an attempt to extend its production area, we have conducted experiments both in the northern and southern parts of the East Sea and studied on their growth in an aim to use the results for increasing overall productivity of the species. Early juvenile scallops producted in February 2014 showed an average shell length of $0.23{\pm}0.002$. The high growth group showed an average shell length and shell height of $4.11{\pm}0.08mm$ and $4.28{\pm}0.09mm$, respectively, in June while they were $23.63{\pm}3.4mm$ and $24.19{\pm}4.5mm$ in October. The low growth group showed an average shell length and shell height of $2.23{\pm}0.7mm$ and $1.99{\pm}0.9mm$, respectively, in June while they were $1.99{\pm}0.9mm$ and $17.59{\pm}4.5mm$ in October. The daily growth rate of the high growth group was 0.037 mm/day and 0.027 mm/day for the low growth group. In August, we measured the shell length of Patinopecten yessoensis from Yangyang-gun, Gangneung-si, Yeongdeok-gun, and Pohang-si. Patinopecten yessoensis from Pohang-si showed the best growth performance with its shell length of $26.90{\pm}3.6mm$. Patinopecten yessoensis from Yeongdeok was the second largest with its shell length of $23.56{\pm}3.4mm$. We presume that optimal water temperature and phytoplankton abundance of the two regions have contributed to the good growth performance of the species.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.452-455
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.30-34
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Journal of Life Science
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• v.29 no.6
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• pp.653-661
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• 2019

The first small interfering RNA (siRNA) therapeutics have recently been approved by the Food and Drug Administration in the U.S., and the demand for a new RNA therapeutics bioanalysis method-which is essential for pharmacokinetics, including the absorption, distribution, metabolism, and excretion of siRNA therapeutics-is rapidly increasing. The stem-loop real-time qPCR (RT-qPCR) assay is a useful molecular technique for the identification and quantification of small RNA (e.g., micro RNA and siRNA) and can be applied for the bioanalysis of siRNA therapeutics. When the anti-HPV E6/E7 siRNA therapeutic was used in preclinical trials, the established stem-loop RT-qPCR assay was validated. The limit of detection was sensitive up to 10 fM and the lower limit of quantification up to 100 fM. In fact, the reliability of the established test method was further validated in three intra assays. Here, the correlation coefficient of $R^2$>0.99, the slope of -3.10 ~ -3.40, and the recovery rate within ${\pm}20%$ of the siRNA standard curve confirm its excellent robustness. Finally, the circulation profiles of siRNAs were demonstrated in rat serum, and the pharmacokinetic properties of the anti-HPV E6/E7 siRNA therapeutic were characterized using a stem-loop RT-qPCR assay. Therefore, the stemloop RT-qPCR assay enables accurate, precise, and sensitive siRNA duplex quantification and is suitable for the quantification of small RNA therapeutics using small volumes of biological samples.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.102-102
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• 1999

Visible photoluminescence(PL) in si-implanted SiO2 films on crystaline silicon were observed. Thermal oxide films of 1 ${\mu}{\textrm}{m}$ thickness on P-type crystal silicon were made and si+ ions were implanted with 200keV acceleration voltage on ti. Argon laser (wavelength 488nm) and PM tube were used for PL measurements. As annealing time increased at low temperature, the visible PL intensity are increased and the peak positions are changed. On the other hand, with increasing annealing time at high temperature, the visible PL intensity are disappeared. From the PL peaks and intensity changes, XRD results, and TEM observations, we will discuss the origin of PL in Si+-implanted SiO2 films with oxygen righ defects and silicon rich defects.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.115-121
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• 1995

A mask for x-ray lithography is fabricated with SiN membrane and WTi absorber. SiN membrane is deposited by plasma enhanced chemical vapor deposition, and the stress of SiN membrane is controlled to be less than 100 MPa by rapid thermal annealing. WTi absorber is reactively deposited by DC-magnetron type sputter, and the working gases are argon and nitrogen. Added nitrogen is contributed to the stress of WTi absorber. The stress of WTi absorber is controlled to be less than $\pm$ 100 MPa by controlling the deposition pressure. 10$\mu$m WTi pattern is delineated on SiN membrane by dry etching technique.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.75-76
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• 2006

New PM route via bulk mechanical alloying is developed to fabricate the solid solution semi-conductive materials with $Mg_2Si_{1-x}Ge_x$ and $Mg_2Si_{1-y}Sn_y$ for 0 < x, y < 1 and to investigate their thermoelectric materials. Since $Mg_2Si$ is n-type and both $Mg_2Ge$ and $Mg_2Sn$ are p-type, pn-transition takes place at the specified range of germanium content, x, and tin content, y. Through optimization of chemical composition, solid-solution type thermoelectric semi-conductive materials are designed both for n-and p-type materials.