• Title/Summary/Keyword: SiPM

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Current Crowding Effects and Electromigration in Al-1%Si Thin Finlm Metallizations (Al-1%Si 박막금속배선에서 전류 크라우딩 효과 및 Electromigration)

  • 조형원;김대일;김진영
    • Journal of the Korean Vacuum Society
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    • v.3 no.1
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    • pp.65-70
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    • 1994
  • 본 논문에서는 Al-1%Si 박막금속배선에서 국부적 전류 크라우딩 효과 및 박막금속배선의 길이 에 따른 수명의 변화, 그리고 이층금속배선에서의 전계효과를 연구하였다. 전류 크라우딩 효과에 으한 박막금속 배선의 수명감소를 관찰하기 위해 넓은 도선과 좁은 도선이 반복적으로 연결되어 있는 구조의 금속배선과 톱니 형태의 금속배선을 제작하였다. 길이에 따른 박막금속배선의 수명변화를 연구하기 위 해 100, 400, 800, 1200 그리고 $1600mu$m의 길이를 갖는$ 3\mu$m 선폭의 박막금속배선을 각각 제작하였다. Al-1%Si 박막금속배선에 인가된 전류밀도는 3.5~4.5x106 A/cm2이었다. 이층금속배선에서 전계에 의한 수명의 변화를 살펴보기 위해 두 금속 배선 사이에 0, $\pm$30, $\pm$60V의 전계를 인가하고 상층 금속배선에 1.75x106 A/cm2 전류 밀도를 조사하였으며 발생한 결함 현상에 대한 분석은 광학현미경과 주사전자현미 경으로 관찰하였다. 주요 결론으로는 박막금속배선에서 전류 크라우딩 효과는 수명의 감소를 초래하며 박막금속배선의 길이가 증가함에 따라 수명은 급격하게 감소하다가 포화된다. 중첩된 이층금속배선에서 는 전계효과에 의한 금속배선의 수명감소현상이 가속된다.

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Fabrication of a Silicon Hall Sensor for High-temperature Applications (고온용 실리콘 홀 센서의 제작)

  • 정귀상;류지구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.514-519
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    • 2000
  • This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

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Fabrication of a Silicon Hall Sensor for High-temperature Applications (고온용 실리콘 홀 센서의 제작)

  • Chung, Gwiy-Sang;Ryu, Ji-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.29-33
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    • 2000
  • This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

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Development of the S-band receiver for LEO satellite (저궤도 위성용 S대역 수신기의 개발)

  • Park, In-Yong;Jin, Hyun-Peel;Lee, Soon-Cheon;Sirl, Young-wook
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.44 no.3
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    • pp.212-217
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    • 2016
  • The S-band receiver for Low Earth Orbit satellite is designed and fabricated as engineering model. Demodulator is implemented by using FPGA for extension of demodulator method. The receiver consists of RF Block, Digital demodulator and Power stage and has a Doppler tracking function to compensate a frequency shift that occur on the operation. The measured results of fabricated receiver show BER of less than $1.0{\times}10^{-6}$ at -110dBm RF input power and equipped a frequency tracking of ${\pm}100KHz$ relative to the center frequency. TID test was satisfied with the results of the test criterion is 10krad.

Raman Spectroscopic Deconvolution of Strain and Charge Doping Effects in Graphene on SiO2/Si Substrate

  • Lee, Ji-Eun;Kim, Seon-Ho;Gang, Seong-Gyu;Yang, Seong-Ik;Lee, Yeong-Sik;Ryu, Sun-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.155-155
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    • 2011
  • 그래핀(graphene)은 모든 탄소 원자가 표면에 존재하는 이차원 결정이기 때문에 다른 고체 표면에 고착될 때 인장 및 압축 변형(tensile & compressive strain)과 전하 도핑(charge doping)에 취약하다고 알려져 있다. 본 연구에서는 산화실리콘(SiO2/Si) 기판 위에 기계적으로 박리된 그래핀에 혼재되어 나타나는 기계적 변형과 전하 도핑 현상을 분석할 수 있는 라만 분광법 기술을 개발하고자 하였다. 대부분의 시료에서 기계적 변형으로 인해 라만 G-band와 2D-band의 진동수(${\omega}$)가 특별한 상관관계(${\Delta}{\omega}2D/{\Delta}{\omega}G$ = 2.0 ${\pm}$ 0.2)를 가진다는 사실을 확인하였다. 전자 친화도가 큰 F4-TCNQ (tetrafluorotetracianoquinodimethane)를 증착하여 화학적으로 p-형 전하 도핑을 유도한 그래핀에서는 기계적 변형과는 분명히 구별되는 상관관계(${\Delta}{\omega}2D/{\Delta}{\omega}G$ = 1.0 ${\pm}$ 0.3)가 관찰되었다. 본 연구는 라만 분광법을 통해 그래핀의 기계적 변형과 전하 도핑 정도를 정량적으로 분리해서 분석할 수 있는 방법을 제시해 준다.

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Development of an Electromagnetic Actuator for Probe-based Data using Si Storage by Process and Cu Electroplating (실리콘 공정 및 동 도금 기술을 이용한 탐침형 정보저장장치의 전자기력 미디어 구동기 제작)

  • 조진우;이경일;김성현;최영진
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.4
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    • pp.225-230
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    • 2004
  • An electromagnetic actuator has been designed and fabricated for Probe-based data storage applications. The actuator consists of permanent magnets(SmCo) housing and a media Platform which is connected to the Si frame by four couples of Si leaf springs. In order to generate electromagnetic force, Cu coils were electroplated under the media platform. The magnetic field distribution was calculated with 3D Finite Element Method of Maxwell 3D program. The field strength felt by Cu coils was estimated to be about 0.33T when the distance between the media platform and permanent magnets is $200\mu\textrm{m}$. The static and dynamic motions of the actuator were analyzed by FEM method with ANSYS 5.3. The measured displacements of the actuator were about $\pm$$92\mu\textrm{m}$ for input current of $\pm$40㎃ and the resonance frequency was 100Hz. The proposed electromagnetic actuator can be utilized for media driver of probe-based data storage system.

A prototype of the SiPM readout scintillator neutron detector for the engineering material diffractometer of CSNS

  • Yu, Qian;Tang, Bin;Huang, Chang;Wei, Yadong;Chen, Shaojia;Qiu, Lin;Wang, Xiuku;Xu, Hong;Sun, Zhijia;Wei, Guangyou;Tang, Mengjiao
    • Nuclear Engineering and Technology
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    • v.54 no.3
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    • pp.1030-1036
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    • 2022
  • A high detection efficiency thermal neutron detector based on the 6LiF/ZnS(Ag) scintillation screens, wavelength-shifting fibers (WLSF) and Silicon photomultiplier (SiPM) readout is under development at China Spallation Neutron Source (CSNS) for the Engineering Material Diffractometer (EMD).A prototype with a sensitive volume of 180mm×192mm has been built. Signals from SiPMs are processed by the self-design Application Specific Integrated Circuit (ASIC). The performances of this detector prototype are as follows: neutron detection efficiency could reach 50.5% at 1 Å, position resolution of 3, the dark count rate <0.1Hz, the maximum count rate >200KHz. Such detector prototype could be an elementary unit for applications in the EMD detector arrays.

A Clinical Study on the Effects of Acupuncture at Sang-Baek for Patients with Sprain of the Wrist Joint (양계혈(陽谿穴) 부위 통증을 호소하는 수근관절 염좌 환자에 대한 상백혈(上白穴) 자침(刺鍼) 효과에 대한 임상적 연구)

  • Kang, Mi-Suk;Song, Ho-Sueb;Lee, Kwang-Ho
    • Journal of Acupuncture Research
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    • v.22 no.6
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    • pp.211-217
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    • 2005
  • Objectives : This study was to evaluate the effects of acupuncture at Sang-Baek, Dong-Si acupuncture point, for the patients with sprain of the wrist pain(snuffbox region). Methods : To randomize, We tossed a coin, so 36 patients were divided into two. Group A of 19 persons was treated with common acupuncture treatment, and Group B of 17 persons was treated with acupuncture of Sang-Baek. We evaluated the treatment effect of each group by Visual Analogue Scale and Modified Mayo Wrist Score. Results : After 7days from the baseline, in VAS, Group A is $4.84{\pm}1.80$ and Group B is $3.35{\pm}2.06(P=0.038)$. In Wrist Score, Group A is $26.47{\pm}18.70$ and Group B is $44.64{\pm}27.76(P=0.034)$ Conclusion : We knew that acupuncture of Sang-Baek is more effective.

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A Study on the PM Competencies for Successful Completion of IT Project (성공적인 IT프로젝트 수행을 위한 PM 역량에 관한 연구)

  • Kim, Dong-Wook;Lee, Won-Young
    • Journal of Information Technology Services
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    • v.16 no.2
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    • pp.85-96
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    • 2017
  • The revised "Software Industry Promotion Law" has been effective from 2013. This law is to be basis of the domestic public information sector and increases the opportunities for small and medium-sized firms in participating the public IT projects. The shortcomings of this law may be the increase of the risk and the decrease of quality of projects. These suggest that the competencies of project manager (PM) s are critical. Also, in general, an SI (System Integration) project is a one that provides a customer with a customer-tailored system for system integration. Particularly, in an SI project involved in a public institution or a large corporation, the ripple effect of success or failure of a project is becoming greater as the system requires higher cost and more time due to high complexity and large scale. One of the solutions to address these problems is to investigate the competencies of a PM. Thus, in this paper, we derived the major competencies using the RGT (Repertory Grid Technique) and categorized the resultant constructs using the content analysis. In addition, we analyzed the level of importance of competencies by applying the AHP (Analytic Hierarchy Process). The conclusion was that Problem-solving Skill and Leadership were the most important competencies of a project manager.

Improved measurement uncertainty of photon detection efficiency for single pixel Silicon photomultiplier

  • Yang, Seul Ki;Lee, Hye-Young;Jeon, Jina;Kim, Sug-Whan;Lee, Jik;Park, Il H.
    • The Bulletin of The Korean Astronomical Society
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    • v.37 no.2
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    • pp.210.1-210.1
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    • 2012
  • We report technique used for improved measurement uncertainties for Photon detection efficiency(PDE) of $1mm^2$ single pixel SiPM. It consists of 470nm LED light source, two 2-inch integrating sphere and two NIST calibrated silicon photodiodes that have ${\pm}2.4%$ calibration error. With raytracing simulation of our experimental setup, we predict number of photon into SiPM and measurement uncertainty. For MPPC, Hamamatsu suggested PDE(1600 micro pixel) including crosstalk and afterpulse is 23.5% at 470 nm. By using new low calibration error photodiode and raytracing simulation, our simulation result has ${\pm}3%$ measurement uncertainty. The technical detail of measurement, simulation are presented with the results and implication.

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