• Title/Summary/Keyword: SiOG process

Search Result 7, Processing Time 0.032 seconds

A High Yield Rate MEMS Gyroscope with a Packaged SiOG Process (SiOG 공정을 이용한 고 신뢰성 MEMS 자이로스코프)

  • Lee Moon Chul;Kang Seok Jin;Jung Kyu Dong;Choa Sung-Hoon;Cho Yang Chul
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.12 no.3 s.36
    • /
    • pp.187-196
    • /
    • 2005
  • MEMS devices such as a vibratory gyroscope often suffer from a lower yield rate due to fabrication errors and the external stress. In the decoupled vibratory gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, fabricated with SOI (Silicon-On-Insulator) wafer and packaged using the anodic bonding, has a large wafer bowing caused by thermal expansion mismatch as well as non-uniform surfaces of the structures caused by the notching effect. These effects result in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) technology. It uses a silicon wafer and two glass wafers to minimize the wafer bowing and a metallic membrane to avoid the notching. In the packaged SiOG gyroscope, the notching effect is eliminated and the warpage of the wafer is greatly reduced. Consequently the frequency difference is more uniformly distributed and its variation is greatly improved. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

  • PDF

Effects of Package Induced Stress on MEMS Device and Its Improvements (패키징으로 인한 응력이 MEMS 소자에 미치는 영향 분석 및 개선)

  • Choa Sung-Hoon;Cho Yong Chul;Lee Moon Chul
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.22 no.11 s.176
    • /
    • pp.165-172
    • /
    • 2005
  • In MEMS (Micro-Electro-Mechanical System), packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. In the decoupled vibratory MEMS gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. This effect results in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) process technology. It uses a silicon wafer and two glass wafers to minimize the wafer warpage. Thus the warpage of the wafer is greatly reduced and the frequency difference is more uniformly distributed. In addition. in order to increase robustness of the structure against deformation caused by EMC molding, a 'crab-leg' type spring is replaced with a semi-folded spring. The results show that the frequency shift is greatly reduced after applying the semi-folded spring. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

Fabrication Process and Mechanical Properties of High Volume Fraction SiC Particle Preform (고부피분율 SiC분말 예비성형체의 제조공정과 기계적특성)

  • 전경윤
    • Journal of Powder Materials
    • /
    • v.7 no.1
    • /
    • pp.27-34
    • /
    • 2000
  • The fabrication process and mechanical properties of SiC particle prefrrms with high volume fraction ranged 50∼71% were investigated to make metal matrix composites for possible applications as heat sinks in electronic packares. The SiC particle preforms with 50∼71vol% of reinforcement were fabricated by a new modified process named ball milling and pressing method. The SiC particle performs were fabricated by ball milling of SiC particles with single sized of 48${\mu}$m in diameter or two different size of 8${\mu}$m and 48${\mu}$min diameter, with collodal SiO2 as inorgnic binder in distilled water, and the mixed slurries were cold pressed for consolidation into final prefom. The compressive strengths og calcined SiC particle prefoms increased from 20MPa to 155MPa with increasing the content of inorganis binder, temperature and time for calcination. The increase of compressive strength of SiC particle bridge the interfaces of two neighboring SiC particles.

  • PDF

A Study on the Energy Saving through Pollutant removal of Intake gate (취수구 스크린 협잡물 제거를 통한 에너지 절감효과 분석)

  • Kim, Byeong-Kakg;Park, Inn;You, Si-Og;Jang, Seung-Don
    • Proceedings of the KIEE Conference
    • /
    • 2011.07a
    • /
    • pp.930-931
    • /
    • 2011
  • As the upsurge in oil prices and global warming, Energy saving is needed to overall industry. If The head of Intake gate screen is high. The pumping process involves a loss of energy and results in high emissions of greenhouse gases. Therefore, blockages in intake gate should be free. Another advantage of cleaning is stabilizing pumping system. Because vibration and cavitation decreases when loss of head is low.

  • PDF

Fabrication and Characterization of Single Crystalline Silicon (SCS) RF MEMS Switch (단결정 실리콘 RF MEMS 스위치의 제작 및 특성 평가)

  • Kim Jong-Man;Lee Sang-Hyo;Baek Chang-Wook;Kwon Young-Woo;Kim Yong-Kweon
    • 한국정보통신설비학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.67-70
    • /
    • 2006
  • This paper deals with a single crystalline silicon (SCS) RF MEMS switch for telecommunication system applications. The proposed SCS switch was fabricated using a silicon-on-glass (SiOG) process and its performances in terms of RF responses, switching time, lifetime were characterized. The proposed SCS switch consists of movable plates, mechanical spring structures, which are composed of robust SCS, resulting in mechanically good stability, The measured actuation voltage was 30 V, and with this applied voltage, the insertion loss and isolation characteristics were measured to be 0.05 and 44.6 dB at 2 GHz respectively. The measured switch ON and OFF time were 13 and $9{\mu}s$, respectively. The lifetime of the fabricated switch was tested. Even after over 1 billion cycles repeated ON/OFF actuations, the switch maintained its own characteristics.

  • PDF

Design, Fabrication and Performance Test of A Non-Vacuum Packaged Single Crystalline Silicon MEMS Gyroscope (대기압형 단결정 실리콘 MEMS 각속도계의 설계, 제작 및 성능 측정)

  • Jung, Hyoung-Kyoon;Hwang, Young-Seok;Sung, Woon-Tahk;Chang, Hyun-Kee;Lee, Jang-Gyu;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
    • /
    • 2006.07c
    • /
    • pp.1635-1636
    • /
    • 2006
  • In this paper, a non-vacuum packaged single crystalline silicon MEMS gyroscope is designed, fabricated and tested. To reduce air damping of the gyroscope structure for non-vacuum packaging, air damping model is used and damping is minimized by analysis. The inner and outer spring length is optimized by ANSYS simulation for rigid body motion. The gyroscope is fabricated by SiOG(Silicon On Glass) process. The performance of the gyroscope is measured to evaluate the characteristic of the gyroscope. The sensitivity, non-linearity, noise density and the bias stability are measured to 9.7693 mV/deg/s, 04265 %, 2.3 mdeg/s/rtHz and 16.1014 deg/s, respectively.

  • PDF

A study on frequency response of two-mass system for gyroscope applications (각속도계 적용을 위한 이중 질량 시스템의 주파수 응답에 관한 연구)

  • Hwang, Young-Suk;Jung, Hyoung-Kyoon;Song, Eun-Seok;Baek, Chang-Wook;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
    • /
    • 2007.11a
    • /
    • pp.154-155
    • /
    • 2007
  • This paper describes frequency response of two-mass system for gyroscope applications. The two-mass system of the proposed device is adapted to the sensing part of the gyroscope in this research. Two-mass system has two resonant peaks and wide flat region between two resonant peaks. The resonant frequency of driving part is in this flat region. Therefore, frequency tuning is not necessary for mode matching. In the proposed device, resonant frequency is designed as 7183 Hz in driving part. Mass ratio of two masses in sensing part is 0.1 and device size is 6 mm $\times$ 6 mm. The device is fabricated by SiOG process. The fabricated spring width is increased from $4{\mu}m$ to $4.5{\sim}4.7{\mu}m$, and the measured resonant frequency is 8392 Hz in driving mode. We operated the sensing part using parallel plate of proof mass to verify the sensing part. It is confirmed the device has a wide fiat region in frequency response curve and the resonant frequency of the driving part is in the wide flat region of sensing mode.

  • PDF