• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.553-559
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• 1990

The nonuniform shrinkage has been investigaed in pressureless sintering of $\alpha$-SiC, where born carbide and phenolic resin as a carbon source are used as densification aids. Compacted specimens, prepared from the granulated powder, were sintered at 215$0^{\circ}C$ for 30min in Ar atmosphere. Using the fresh and unseasoned graphite crucible, the upwarped specimens were obtained, while specimens were uniformly shrunk in the seasoned crucible. This effect is mainly due to the nonuniform distributjion of boron carbide during heatig, which originates in the reaction of boron carbide with CO gas, providing from the result of SiO2 reduction with carbon during heating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.225-228
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• 2000

Addition effects of metal oxide on the characteristics of infrared radiator of porous cordierite have been investigated. The porosity was increased with adding the graphite for 2MgO $.$ 2A1$_2$O$_3$$.$5SiO$_2$. The microstructure and the spectral emissivity were investigated as a function of metal oxide additives. The prosity and the emissivity were decreased with increasing amounts of CuO additives. The prosity and the emissivity were increased with increasing amounts of CoO, MnO$_2$ additives. The infrared radiator of cordierite system which spectral emissivity was 0.927 and 0.928 at from 5$\mu\textrm{m}$ to 20$\mu\textrm{m}$ wavelength as a 9wt% of CoO and MnO$_2$ additives.

• Economic and Environmental Geology
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• v.30 no.1
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• pp.35-49
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• 1997

The coal formation of the Deokpyeong area are interbedded along metapelites of the Ogcheon Supergroup, which are composed mainly of graphite, quartz, muscovite and associated with small amounts of biotite, chlorite, pyrite and barite. The ratios of $SiO_2/Al_2O_3$, $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ of the coaly metapelite are variable and wide range from 1.80 to 10.21, from 27.8 to 388.8 and from 7.6 to 61.8, respectively. These coal formation were deposited in basin of marine environments, and the REE of these rocks are not influenced with metamorphism and hydrothermal alterations on the basis of $Al_2O_3$ versus La, La against Ce, the ratios of La/Ce (0.19 to 0.99) and Th/U (0.02 to 4.75). These rocks also show much variation in $La_N/Yb_N$ (1.19 to 22.89), Th/Yb (0.14 to 21.43) and La/Th (0.44 to 13.67), and their origin is explained by derivation from a mixture of sedimentary and igneous rocks. The wide range in trace and REE element characteristics as Co/Th (0.12 to 2.78), La/Sc (0.33 to 10.18), Sc/Th (0.57 to 5.73), V/Ni (8 to 2347), Cr/V (0.02 to 0.67) and Ni/Co (1.56 to 32.95) of these coaly metapelites argues for inefficient mixing of the various source lithologies during sedimentation. Deep to pale green barium-vanadium muscovites (vanadium-oellacherite) have been found in this coal formations. Modes of occurrence and grain size of muscovite are heterogeneous, but most of the barium and vanadium-bearing muscovites occur along the boundaries between graphite and quartz grains, ranging from 200 to $350{\mu}m$ in length and from 40 to $60{\mu}m$ in width. Results of X-ray diffraction data of the minerals characterized to be monoclinic system with $a=5.249{\AA}$, $b=8.939{\AA}$, $c=20.924{\AA}$ and ${\beta}=95.894^{\circ}$. Representative chemical formula of the muscovite was $(Na_{0.09}K_{1.44}Ba_{0.46})(Al_{2.75}Ti_{0.07}V_{0.56}Fe_{0.08}Mg_{0.50})(Si_{6.12}Al_{1.88})O_{22}$. The V possibly substitute octahedral Al, and the Ba is coupled substitution of $K^+Si^{4+}=Ba^{2+}Na^+Ca^{2+}$, which compositional ranges of V and Ba are from 0.42 to 0.69 and from 0.34 to 0.56 based on $O_{22}$, respectively. Formation mechanism of the barium-vanadium muscovites in the coaly metapelite is shown that the formed by high pressure and temperature from regional metamorphism origanated during diagenesis at the interface between a basinal brine and organic matter.

• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.25-30
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• 1991

The evaporation characteristics of Ag, Al, Au, Cr. Cu, In, Mg, Mn, Pb, Pd, Si, SiO, Sn, Ti and Zn with the various resistive heating sources have been studied. The employed sources are refractory metal (Mo, Ta and W) boats, W-wire, ceramic (usually Al2O3)-coated and -barriered refractory metal boats, and special boats such as baffled boats and intermetallic boats (nitride compound and graphite). We investigated the melting mode, evaporation rate at a specific power, and lifetime of the sources. A special boat holder is also discussed which is needed to cool the sources at a large heat capacity.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.117-126
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• 2001

Tribological properties of high temperature fade were investigated by changing relative amounts of ingredients in the brake friction material. Based on a simple experimental formulation containing 10 ingredients, friction materials were tested using a pad-on-disk type friction tester. Twenty-five friction material specimens with different relative amounts of the ingredients were manufactured according to the constrained mixture design .The difference ($\Delta$${\mu}$=${\mu}$$\sub$max/. -${\mu}$$\sub$min/. ) of friction coefficients was measured to represent the high temperature fade. Results from elevated temperature tests showed that five ingredients including cashew, graphite, Sb$_2$S$_3$, ZrSiO$_4$, and Cu fibers played important roles on $\Delta$${\mu}$. In order to find relative importance on fade phenomena among these ingredients, ANOVA(analysis of variance) was performed in this investigation. Thirty-two friction material specimens by changing ${\pm}$50vol.％ of these five ingredients were tested to examine the relative importance. Results showed that cashew, graphite '||'&'||' Sb$_2$S$_3$, and cashew '||'&'||' graphite aggravated the fade behavior and Cu fibers improved on fade resistance.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.531-540
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• 1991

In this study, high quality machinable ceramics was prepared from the K2O-MgO-Al2O3-SiO2-B2O3-F glass system using domestic pyrophyllite. The mixture of pyrophyllite and additives was melted at 1450$^{\circ}C$ for 1 hour and formed in a graphite mold. The base glass was heat-treated at 600$^{\circ}C$ to 1200$^{\circ}C$ with interval of 50$^{\circ}C$ for 3 hours identified by XRD. Crystalline phase were confirmed by XRD and their microstructure was observed by SEM. The glass ceramics which was prepared by heat treatment of base glass at 1150$^{\circ}C$ for short time has good physical, mechanical, thermal, chemical properties and machinability.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

• Journal of the Korean Ceramic Society
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• v.43 no.10 s.293
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• pp.646-652
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• 2006

Several oxynitride glasses were fabricated by means of adding $Si_3N_4$ powders as nitrogen source to Ca-Al-Si-O-N (CAS) and Mg-Al-Si-O-N (MAS) glass powders, and heat-treated in graphite crucible at 1600$^{\circ}C$ for 1 h. The physical and mechanical properties as well as impact resistance were generally increased and compared with each other. The impact resistance properties of those manufactured glasses were evaluated by DOP (depth of penetration) method which is a way to analyze armor materials. There were two means to be used herein; the copper jet impacted at hyper velocity by exploding K2l5 warhead and tungsten heavy alloy (WHA) impact bar at high velocity by firing in 30 mm solid propellent gun. The impact resistance properties against copper jet were increased and then decreased with increasing nitrogen content, while those against WHA bar were not changed apparently with nitrogen content.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.49-53
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• 2011

Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.