• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.37-41
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• 2012

A lithium ion conducting borosilicate glass was fabricated by a conventional melt quenching technique from a mixture of Li2CO3, B2O3 and SiO2 powders. The Li ion conductivity of the lithium borosilicate glasses was evaluated in terms of the SiO2/B2O3 ratio. In the Li2O-B2O3-SiO2 ternary glass, the glass forming region decreases with an increasing Li2O content. At the same Li2O, the crystallization tendency of the glass samples increases with the SiO2/B2O3 ratio, resulting in a reduced glass forming region in the Li2O-B2O3-SiO2 ternary glass. The electrical conductivity moderately depends on the SiO2/B2O3 ratio in the Li2O-B2O3-SiO2 ternary glass. The conductivity of the glasses slightly increases with the SiO2/B2O3 ratio. The observed phenomenon can be explained by the modification of the glass structure as a function of the SiO2 content.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• Membrane Journal
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• v.25 no.2
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• pp.115-122
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• 2015

$SiO_2{\cdot}B_2O_3$ was prepared by trimethylborate (TMB)/tetraethylorthosilicate (TEOS) mole ratio 0.01 at $800^{\circ}C$. PDMS[poly(dimethysiloxane)]-$SiO_2{\cdot}B_2O_3$ composite membranes were prepared by adding porous $SiO_2{\cdot}B_2O_3$ to PDMS. To investigate the characteristics of PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane, we observed PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane using TG-DTA, FT-IR, BET, X-ray, and SEM. PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was studied on the permeabilities of $H_2$ and $N_2$ and the selectivity ($H_2/N_2$). Following the results of TG-DTA, BET, X-ray, FT-IR, $SiO_2{\cdot}B_2O_3$ was the amorphous porous $SiO_2{\cdot}B_2O_3$ with $247.6868m^2/g$ surface area and $37.7821{\AA}$ the mean of pore diameter. According to the TGA measurements, the thermal stability of PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was enhanced by inserting $SiO_2{\cdot}B_2O_3$. SEM observation showed that the size of dispersed $SiO_2{\cdot}B_2O_3$ in the PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was about $1{\mu}m$. The increasing of $SiO_2{\cdot}B_2O_3$ content in PDMS leaded the following results in the gas permeation experiment: the permeability of both $H_2$ and $N_2$ was increased, and the permeability of $H_2$ was higher than $N_2$, but the selectivity($H_2/N_2$) was decreased.

• Membrane Journal
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• v.14 no.4
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• pp.312-319
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• 2004

The porous SiO$_2$-B$_2$O$_3$ membrane was prepared from Si(OC$_2$$H_5$)$_4$-($CH_3$O)$_3$B-C$_2$$H_5$OH-$H_2O$ system by sol-gel method. In order to investigate the characteristics of this membrane, we examined that using BET, IR spectrophotometer, X-ray diffractometer, SEM and TEM. At $700^{\circ}C$, the surface area of SiO$_2$-B$_2$O$_3$ membrane was 354.398 $m^2$/, the median pore diameter was 0.0048 ${\mu}{\textrm}{m}$, and the particle size of SiO$_2$-B$_2$O$_3$ membrane was 7 nm. The separation properties of the gas mixture ($H_2$/$N_2$) through the SiO$_2$-B$_2$O$_3$ membrane was studied as a function of pressure. The real separation factor($\alpha$) of SiO$_2$-B$_2$O$_3$ membrane for $H_2$/$N_2$ gas mixture was 4.68 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$) and tail separation factor((equation omitted)) were increased as the pressure of permeation cell increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.272-273
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• 2006

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 4 종류의 borosilicate계 glass를 선정하고 filler로 $Al_2O_3$ ceramics를 filler 사용하여 30~50 vol% glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 $SiO_2$와 $B_2O_3$ 함량비를 고정한 후 R(CaO, BaO, ZnO, $Bi_2O_3$)에 따라 유리 연화온도(Ts)와 함량이 소결에 미치는 영향 및 유전 특성 변화를 고찰한 결과, CaO-$B_2O_3-SiO_2$ glass의 경우 다량의 2 차상이 형성되었고, 이에 $900^{\circ}C$ 이하에서 완전 소결이 이루어지지 않았으며, BaO-$B_2O_3-SiO_2$ glass는 celsian($BaAl_2Si_2O_8$) 결정이 형성되면서 소결성의 저하를 갖고 왔으며, ZnO-$B_2O_3-SiO_2$ glass는 소결이 진행됨에 따라 주상이 $Al_2O_3$에서 gahnite($ZnAl_2O_4$) 결정이 형성되면서 품질계수가 크게 증가하였으며, $Bi_2O_3-B_2O_3-SiO_2$ glass는 45 vol%일 때 $900^{\circ}C$에서부터 일정한 선수축율 특성을 나타내었지만, 다량의 액상으로 인하여 유전 특성의 저하를 나타내었다.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.845-850
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• 1997

수직형 FHD증착법을 사용하여 SiO$_{2}$, SiO$_{2}$-P$_{2}$O$_{5}$, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 실리카 유리미립자를 형성하였으며, SEM, ICP-AES, XRD, TGA-DSC을 사용하여 그 특성을 분석하였다. XRD측정을 통해, 미립자 형성시 사용된 화염온도(130$0^{\circ}C$-150$0^{\circ}C$)와 기판온도(-20$0^{\circ}C$)가 SiO$_{2}$-P$_{2}$O$_{5}$계 미립자를 비정질상태로 형성하였으며, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$와 SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 미립자에서는 B$_{2}$O$_{3}$, BPO$_{4}$, GeO$_{2}$의 결정성피크들을 관찰하였다. TGA-DSC 열분석을 통해, SiO$_{2}$와 SiO$_{2}$-P$_{2}$O$_{5}$는 온도변화에 따른 질량변화가 없었으며, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계의 경우 질량감소를 동반한 유리전이에 따른 분자이완현상 및 결정화나 회복반응을 나타내고 있다. 질량감소는 미립자가 결정상태일때 가속되는 경향을 나타냈으며, DSC열분석을 통해 SiO$_{2}$, SiO$_{2}$-P$_{2}$O$_{5}$, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 유리미립자들의 고밀화가 시작되는 온도를 각각 1224$^{\circ}C$, 1151$^{\circ}C$, 953$^{\circ}C$, 113$0^{\circ}C$에서 관찰하였다.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.19-25
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• 2002

Ternary $xSrO-yB_2O_3-0.1Al_2O_3$ and $xSrO-yB_2O_3-0.1SiO_2$ glasses were prepared as a function of R(${\equiv}x/y$). The fraction of four-coordinated brans ($N_4$), symmetric three-coordinated barons ($N_{3S}$), and asymmetric three-coordinated barons ($N_{3A}$) were determined quantitatively to study the structures of these glasses by $^{11}B$ NMR. The values of $Q_{cc}$ and ${\eta}$ for $BO_3$ unit in the glasses were 2.74MHz and 0.22, those for $BO_3{^-}$ unit were 2.54MHz and 0.55, and those for $BO_4$ unit 0.60~0.75MHz and 0.00, respectively. The structure of SrBAl glass at $R_{1st}$ consisted of tetraborate ($[B_8O_{13}]^{-2}$) units and 1st-modified diborate ($[B_2Al_2O_7]^{-2}$) units, and those for the glass at $R_{max}$consisted of diborate ($[B_4O_7]^{-2}$) units, metaborate ($[BO_2^{-1}]$), 1st-modified diborate units, and 2nd-modified diborate ($[B_2Al_2O_8]^{-4}$) units. Due to the oxygens introduced from the strontium oxide. $AlO_4$ units were preferably formed rather than $BO_4$ units. And, the structure of SrBSi glasses in the region $R{\leq}0.5$ could be viewed as binary $SrO-B_2O_3$ glasses structure diluted by silicate oxide: therefore, the Si atoms of the glasses did not contributed to the change the configuration around the boron atoms. The silicate oxide was formed the $SiO_4{^-}$ units rather than the $BO_3{^-}$ units by the oxygens introduced from the storntium oxide in the region of $R{\geq}R_{max}$, and structure of those glass at $R_{max}$ consisted of diborate units, metaborate units loose $BO_4([BO_2]^{-1})$, and $SiO_4{^-}([SiO_{2.5}]^{-1})$ units.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.27-31
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• 2002

Quarternary $Li_2O-B_2O_3-Al_2O_3-SiO_2$ glasses were fabricated by the function of $R({\equiv}Li_2Omole%/B_2O_3mole%)$ and $K({\equiv}(Al_2O_3mole%+SiO_2mole%/B_2O_3mole%)$. The structures of these glasses were investigated through refractive index and Vicker's hardness. The refractive index increased as the increase of the polarizability in the glass network. In the region of low $Li_2O$ content, the refractive index increased due to the increase of the polarizability in the glass network but, in the region of high $Li_2O$ content, the rate of increase of the refractive index decreased due to the increase of the molar volume caused by the formation of $BO_3{^-}$ units with relatively high molar volume. And, the refractive index decreased as the increase of $Al_2O_3+SiO_2$ content with the molar volume in the glass network. The increase and decrease of vicker's hardness values for those glasses depended on the fraction of tetrahedral $BO_4$ units and it of triangle $BO_3{^-}$ units with non-bridging oxygen, respectively.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.615-622
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• 1993

In order to increase chemical durability of thin films in binary system B2O3-SiO2 and Al2O3-SiO2 on the slide glass by the dip-coating technique from TEOS(Tetraethyl Orthosilicate) and boric acid or aluminum nitrate, phosphoric acid(5~20mol%) was added, respectively. Corrosion of acid and alkali of samples treated with 1N, HCl, NaOH and distilled water at 10$0^{\circ}C$ for 15 minute, were measured IR transmittance and variance of transmittance at visible range. Surface structure of thin film was investigated with SEM and formation of crystal phase according to additiion of phosphoric acid was measrued with XRD. In Al2O3-SiO2 system, change of remarkable characteristic was not obtained at the addition of P2O5 but transmittance of thin film was decreased with addition of P2O5 in B2O3-SiO2 system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.75-78
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• 2009

Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.