• Title/Summary/Keyword: SiNc

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Deposition of Si film and properties of interface for HIT cell by hyperthermal neutral beam (Hyperthermal 중성빔을 이용한 HIT cell용 Si 박막 형성 및 계면특성)

  • Oh, Kyoung-Suk;Choi, Sung-Woong;Kim, Dae-Chul;Kim, Jong-Sik;Kim, Young-Woo;Yoo, Suk-Jae;Hong, Mun-Pyo;Park, Young-Chun;Lee, Bon-Ju
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.394-396
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    • 2008
  • 기존의 PECVD에서 문제시 되고 있는 플라즈마에 의한 박막손상과 $300^{\circ}C$ 이상의 증착온도 등의 단점을 보완한 증착 기술로 중성입자 빔 (Hyper-thermal neutral beam ; HNB)을 이용한 저온 증착방법에 대한 연구를 진행하였다. 중성빔을 이용하여 HNB sputtering 방법과 $SiH_4$와 Ar, $H_2$ 가스를 이용한 HNB CVD 방법으로 a-Si 박막 제작에 대한 연구를 진행하였고, HIT(heterojunction with Intrinsic Thin layer) cell 태양전지를 만들고자 기본적인 박막 증착과 박막 특성 및 계면특성 등의 분석을 실시하였다. 유리기판과 p-type Si 기판 위에 a-Si 및 nc-Si 박막을 증착하였으며, TEM, FTIR, Raman, IV 측정 등을 통해 그 특성을 분석하여 HNB의 특성 및 효과를 규명하였다.

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Thin Film Amorphous/Bulk Crystalline Silicon Tandem Solar Cells with Doped nc-Si:H Tunneling Junction Layers

  • Lee, Seon-Hwa;Lee, Jun-Sin;Jeong, Chae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.257.2-257.2
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    • 2015
  • In this paper, we report on the 10.33% efficient thin film/bulk tandem solar cells with the top cell made of amorphous silicon thin film and p-type bulk crystalline silicon bottom cell. The tunneling junction layers were used the doped nanocrystalline Si layers. It has to allow an ohmic and low resistive connection. For player and n-layer, crystalline volume fraction is ~86%, ~88% and dark conductivity is $3.28{\times}10-2S/cm$, $3.03{\times}10-1S/cm$, respectively. Optimization of the tunneling junction results in fill factor of 66.16 % and open circuit voltage of 1.39 V. The open circuit voltage was closed to the sum of those of the sub-cells. This tandem structure could enable the effective development of a new concept of high-efficiency and low cost cells.

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Mechanical behavior of stud shear connectors embedded in HFRC

  • He, Yu-Liang;Wu, Xu-Dong;Xiang, Yi-Qiang;Wang, Yu-Hang;Liu, Li-Si;He, Zhi-Hai
    • Steel and Composite Structures
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    • v.24 no.2
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    • pp.177-189
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    • 2017
  • Hybrid-fiber reinforced concrete (HFRC) may provide much higher tensile and flexural strengths, tensile ductility, and flexural toughness than normal concrete (NC). HFRC slab has outstanding advantages for use as a composite bridge potential deck slab owing to higher tensile strength, ductility and crack resistance. However, there is little information on shear connector associated with HFRC slabs. To investigate the mechanical behavior of the stud shear connectors embedded in HFRC slab, 14 push-out tests (five batches) in HFRC and NC were conducted. It was found that the stud shear connector embedded in HFRC had a better ductility, higher stiffness and a slightly larger shear bearing capacity than those in NC. The experimentally obtained ultimate resistances of the stud shear connectors were also compared against the equations provided by GB50017 2003, ACI 318-112011, AISC 2011, AASHTO LRFD 2010, PCI 2004, and EN 1994-1-1 (2004), and an empirical equation to predict the ultimate shear connector resistance considering the effect of the HFRC slabs was proposed and validated by the experimental data. Curve fitting was performed to find fitting parameters for all tested specimens and idealized load-slip models were obtained for the specimens with HFRC slabs.

characteristics of Magnesia Dam Block for Tundish Vessel in Steel Making Process (턴디쉬용 마그네시아질 댐블록의 제조와 그특성)

  • 정두화;김상모;이석근
    • Journal of the Korean Ceramic Society
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    • v.36 no.8
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    • pp.876-885
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    • 1999
  • In order to develop high performance basic dam block for tundish vessel in steel-making binders and additives on hydration and thermal characteristics of magnesiz castable refractories were studied. Crack initiation and propagation in cement bonded magnesia castables due to slaking of magnesia clinker at drying process were suppressed by using spinel clinker instead of magnesia powder. In case of Na2O$.$2CaO$.$P2O5(NC2P) bonded castable crack initiation due to slaking of magnesia clinker did not occur but bending strength at high temperature was low. Mechanical properties of NC2P bonded castable refractories at high temperature were improved by using magnesia clinker that contains low SiO2 contents.

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Effects of Oral Intake of Gromwell Water Fraction on Ceramides Content and the Development of Atopic Dermatitis in NC/Nga Mice (자초 추출물 극성 성분의 피부 보습 증진 및 아토피 피부염 호전 효과)

  • Kim, Young-Ran;Cho, Si-Young;Seo, Dae-Bang;Kim, Sung-Han;Lee, Sang-Jun;Cho, Yun-Hi
    • Korean Journal of Food Science and Technology
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    • v.41 no.5
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    • pp.547-551
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    • 2009
  • Gromwell (LE, Lithospermum erythrorhizon), a perennial herbal plant, has been used for the treatment of various problems associated with atopic dermatitis of the skin, such as water loss, epidermal hyperproliferation, and severe inflammation. Previously, it was shown that oral supplementation with a 70% ethanol extract of gromwell prevented the development of atopic dermatitis in NC/Nga mice. In this study, in order to identify the fraction that mediates gromwell's efficacy, the dietary effects of water and ethyl acetate fractions from the ethanol extract of gromwell were assessed in the development of dermatitis using NC/Nga mice. Dietary supplementation of the hot water fraction significantly reduced scores for epidermal hyperproliferation in parallel with a marked increase of ceramides. Supplementation of the gromwell hot water fraction also decreased scratching behavior, which was accompanied by a decrease in plasma levels of IgE. These results showed that the hot water fraction of the gromwell ethanolic extract prevented the development of atopic dermatitis by increasing ceramides in NC/Nga mice.

Study of the optical switching properties in waveguide type Au/$SiO_2$ nanocomposite film using prism coupler (프리즘 커플러를 이용한 도파로형 Au/$SiO_2$ 나노 혼합박막의 광 스위칭 특성 연구)

  • Cho, Sung-Hun;Lee, Soon-Il;Lee, Taek-Sung;Kim, Won-Mok;Lee, Kyeong-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.76-76
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    • 2008
  • The resonance properties due to the surface plasmon(SP) excitation of metal nanoparticles make the nanocomposite films promising for various applications such as optical switching devices. In spite of the well-known ultra-sensitive operation of optical switches based on a guided wave, the application of nanocomposite film(NC) has inherent limitation originating from the excessive optical loss related with the surface plasmon resonance(SPR). In this study, we addressed this problem and present the experimental and theoretical analysis on the pump-probe optical switching in prism-coupled Au(1 vol.%):$SiO_2$ nanocomposite waveguide film. The guided mode was successfully generated using a near infrared probe beam of 1550 nm and modulated with an external pump beam of 532 nm close to the SPR wavelength. We extend our approach to ultra-fast operation using a pulsed laser with 5 ns pulse width. To improve the switching speed through the reduction in thermal loading effect accompanied by the resonant absorption of pump beam light, we adopted a metallic film as a coupling layer instead of low-index dielectric layer between the high-index SF10 prism and NC slab waveguide. We observed great enhancement in switching speed for the case of using metallic coupling layer, and founded a distinct difference in origin of optical nonlinearities induced during switching operation using cw and ns laser.

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Electrical Characteristics of Si-O Superlattice Diode (Si-O 초격자 다이오드의 전기적 특성)

  • Park, Sung-Woo;Seo, Yong-Jin;Jeong, So-Young;Park, Chang-Jun;Kim, Ki-Wook;Kim, Sang-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.175-177
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    • 2002
  • Electrical characteristics of the Si-O superlattice diode as a function of annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice diode with multilayer Si-O structure showed the stable and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator (SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.

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Non volatile memory device using mobile proton in gate insulator by hydrogen neutral beam treatment

  • Yun, Jang-Won;Jang, Jin-Nyeong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.192.1-192.1
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    • 2015
  • We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

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ICPCVD를 이용하여 저온 증착된 나노 결정질 실리콘 기반 박막트랜지스터의 전기적 특성 향상을 위한 플라즈마 처리

  • Choe, U-Jin;Jang, Gyeong-Su;Baek, Gyeong-Hyeon;An, Si-Hyeon;Park, Cheol-Min;Jo, Jae-Hyeon;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.343-343
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    • 2011
  • 저온에서의 Thin Film Transistor (TFT) 혹은 Nonvolatile memory (NVM) 등의 MOS 구조 소자들의 높은 전기적 특성에 관한 연구들이 진행 되면서 mobility와 stability 그리고 구조화의 용이성에 대한 연구가 진행됨에 따라 amorphous silicon의 결정화를 통해 전기적 특성을 향상 시킨 Nanocrystalline silicon (nc-Si)/Microcrystalline silicon (${\mu}c$-Si)에 대한 연구가 관심을 받고 있다. 본 논문에서는 ${\leq}300^{\circ}C$에서 Inductively coupled plasma chemical vapor deposition를 이용한 TFT을 제작하였다. 가스비, 온도, 두께에 따른 결정화 정도를 Raman spectra를 통해 확인한 후 Bottom gate와 Top gate 구조의 TFT를 제작 하고 결정화에 따른 전기적 특성 향상과 그의 덧붙여 플라즈마 처리를 통한 특성 향상을 확인 하였다.

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Formation mechanism of silicon nanocrystals fabricated by pulsed laser deposition (펄스레이저 증착법에 의한 실리콘 나노결정 형성 메커니즘)

  • Kim, Jong-Hoon;Jeon, Kyeong-Ah;Kim, Gun-Hee;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.162-164
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    • 2004
  • Nanocrystalline silicon(nc-Si) thin films on the silicon substrates have been prepared by pulsed laser deposition(PLD). The optical and structural properties of films have been investigated depending on deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence(PL) intensity abruptly decreased and peaks showed red shift. Annealing process could reduce the number of defect centers. Oxidation had a considerable effect upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained by three steps of growth, passivating defect centers, and isolation, sequentially.

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