• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
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• pp.126-126
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.192-192
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• 2003

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.231.2-231
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• 2003

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2005년도 제36차 춘계학술대회 및 제3회 HVEM 이용자 워크샵
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• pp.98-99
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• 2005

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.142.2-142
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.306-306
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• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

• Clinical and Experimental Pediatrics
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• 제53권7호
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• pp.753-758
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• 2010

Purpose: It has been suggested that p16 has a role in glucocorticoid (GC)-related apoptosis in leukemic cells, but the exact mechanisms have yet to be clarified. We evaluated the relationship between the GC response and p16 expression in a lymphoma cell line. Methods: We used p16 siRNA transfection to construct p16-inactivated cells by using the B-cell lymphoblast cell line NC-37. We compared glucocorticoid receptor (GR) expression, apoptosis, and cell viability between control (p16+NC-37) and p16 siRNA-transfected (p16-NC-37) cells after a single dose of dexamethasone (DX). Results: In both groups, there was a significant increase in cytoplasmic GR expression, which tended to be higher for p16+NC-37 cells than for p16- NC37 cells at all times, and the difference at 18 h was significant (P<0.05). Similar patterns of early apoptosis were observed in both groups, and late apoptosis occurred at higher levels at 18 h when the GR had already been downregulated ($P$<0.05). Cell viability decreased in both groups but the degree of reduction was more severe in p16+NC-37 cells after 18 h ($P$<0.05). Conclusion: These results suggest a relationship between GR expression and cell cycle inhibition, in which the absence of p16 leads to reduced cell sensitivity to DX.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.68-69
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• 1998

Nano-crystalline silicon(nc-Si) thin films were directly depposited by ion beam assisted electron beam depposition (IBAED) method. The visibe luminescence in IBAED sampples were originated from not an oxygen bond but Si nano-crystallites. And we can conclude that the ion beam would be contribute to the suppression of the Si-O bond formation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.117-117
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• 2012

Si:Ge alloy semiconductor nanocrystals (NCs) offer challenging opportunities for integrated optoelectronics/optoplasmonics, since they potentially allow unprecedentedly strong light-matter interaction in the wavelength range of the optical communication. In this talk, we discuss the recent research efforts of my laboratory to develop optoelectronic components based on individual group IV NCs. We present experimental demonstration of the individual NC optoelectronic devices, including broadband Si:Ge nanowire (NW) photodetectors, intra NW p-n diodes, Ge NC electrooptical modulators and near-field plasmonic NW detectors, where the unique size effects at the nanometer scales commonly manifest themselves. In particular, we demonstrated a scanning photocurrent imaging technique to investigate dynamics of photocarriers in individual Si:Ge NWs, which provides spatially and spectrally resolved local information without ensemble average. Our observations represent inherent size-effects of internal gain in semiconductor NCs, thereby provide a new insight into nano optoplasmonics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.