• Journal of Integrative Natural Science
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• v.3 no.1
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• pp.1-6
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• 2010

Bis(silyl)alkylbenzenes such as bis(1-sila-sec-butyl)benzene (1) and 2-phenyl-1,3-disilapropane (2) were synthesized in high yields by the reduction of the corresponding chlorosilanes with $LiAlH_4$ in diethyl ether. The dehydrocoupling of 1 and 2 was performed using group IV metallocene complexes generated in situ from $Cp_2MCl_2$/Red-Al and $Cp_2MCl_2$/n-BuLi (M = Ti, Hf), producing two phases of polymers. The TGA residue yields of the insoluble polymers were in the range of 64-74%. The molecular weights of the soluble polymers produced ranged from 700 to 5000 ($M_w$ vs polystyrene using GPC) and from 500 to 900 ($M_w$ vs polystyrene using GPC). The dehydropolymerization of 1 and 2 seemed to initially produce a low-molecular-weight polymer, which then underwent an extensive cross-linking reaction of backbone Si-H bonds, leading to an insoluble network polymer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.16-19
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• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1844-1846
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• 2005

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.177-177
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• 2010

고효율 비정질 실리콘 박막 태양전지 제작을 위해서는 광파장대에서 optical confinement 능력을 최대화할 수 있는 기술이 필수적이다. 효율적인 photon trapping을 위해서는 back reflector를 사용하거나 전면전극인 투명전도성막의 표면에 요철을 형성하여 포획된 태양광의 내부 반사를 증가시키거나 전면 투명전극에서 반사를 감소시켜 태양광의 travel length를 증가시키는 방법이 일반적이며, 이를 통해 흡수층의 효율을 최대화할 수 있다. 이 중 전면전극으로 사용되는 투명전도성막은 불소가 도핑된 tin-oxide가 주로 사용되었으나, 최근 들어 Al이 도핑된 산화아연막을 이용한 비정질 실리콘 박막 태양전지 개발에 대한 연구도 활발히 진행되고 있다. 투명전극 증착후 표면의 유효면적을 증가시키기 위해 염산 용액을 이용하여 표면 텍스쳐링을 수행한다. 그후 흡수층인 p-i-n 층을 플라즈마 화학기상증착법을 이용하여 형성하는 것이 일반적이다. 이때 표면처리 된 투명전극은 수소플라즈마에 대해 특성이 변하지 않아야 고효율 비정질 실리콘 박막 태양전지 제조에 적용될 수 있다. 본 연구에서는 표면처리 된 AZO 투명전극의 수소플라즈마에 의한 특성 변화에 대해 고찰하였다. 먼저 AZO 투명전극은 스퍼터링 공정을 적용하여 $1\;{\mu}m$두께로 증착하였고, 0.5 wt%의 HCl 용액을 이용하여 습식 식각을 수행하였다. 수소플라즈마 처리 조건은 $H_2$ flow rate 30 sccm, working pressure 20 mtorr, RF power 300 W, Temp $60^{\circ}C$ 이며 3분간 진행하였다. 표면형상은 수소플라즈마 전 후에는 큰 차이를 보이지 않았으며 AZO의 grain size는 각각 220 nm, 210 nm로 관찰되었다. 투명전극의 가장 중요한 특성인 가시광선 영역에서의 투과도는 수소플라즈마 처리전에는 90 % 이상의 투과도를 보였으나, 수소플라즈마 처리 후에는 85 %로 약간 저하된 특성을 보였다. 그러나 이는 박막 태양전지용 전면전극으로 사용하기 위한 투과도인 80 % 이상을 만족하는 결과로, 비정질 박막 실리콘 태양전지 제작에 사용될 수 있다. 또 하나의 중요한 특성인 Haze factor 역시 수소플라즈마 처리 전 후 모두 10 이상의 값을 나타냈다. 하지만 고효율 실리콘 박막 태양전지에 적용하기 위해서는 Haze factor를 증가시키는 공정 개발에 대한 추가 연구가 필요하다.

• International Journal of Computer Science & Network Security
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• v.24 no.6
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• pp.200-206
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• 2024

Laser induced breakdown spectroscopy (LIBS) technique has been used for the elemental composition of the soils. In this technique, a high energy laser pulse is focused on a sample to produce plasma. From the spectroscopic analysis of such plasma plume, we have determined the different elements present in the soil. This technique is effective and rapid for the qualitative and quantitative analysis of all type of samples. In this work a Q-switched Nd: YAG laser operating with its fundamental mode (1064 nm laser wavelength), 5 nanosecond pulse width, and 10 Hz repetition rate was focused on soil samples using 10 cm quartz lens. The emission spectra of soil consist of Iron (Fe), Calcium (Ca), Titanium (Ti), Silicon (Si), Aluminum (Al), Magnesium (Mg), Manganese (Mn), Potassium (K), Nickel (Ni), Chromium (Cr), Copper (Cu), Mercury (Hg), Barium (Ba), Vanadium (V), Lead (Pb), Nitrogen (N), Scandium (Sc), Hydrogen (H), Strontium (Sr), and Lithium (Li) with different finger-prints of the transition lines. The maximum intensity of the transition lines was observed close to the surface of the sample and it was decreased along the axial direction of the plasma expansion due to the thermalization and the recombination process. We have also determined the plasma parameters such as electron temperature and the electron number density of the plasma using Boltzmann's plot method as well as the Stark broadening of the transition lines respectively. The electron temperature is estimated at 14611 °K, whereas the electron number density i.e. 4.1 × 10¹⁶ cm^-3 lies close to the surface.

• Korean Journal of Plant Resources
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• v.26 no.2
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• pp.248-270
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• 2013

The purpose of this study is to collect the raw data for conservation of plant ecosystem by surveying and analysing the flora of Mt. Geumgok located in Gyeongju-si, Gyeongsangbuk-do, Korea. The flora were summarized as 453 taxa including 91 families, 298 genera, 397 species, 4 subspecies, 46 varieties and 6 forms. The rare plants designated by Korea Forest Service were 3 taxa such as Eranthis byunsanensis B.Y.Sun, Potentilla discolor Bunge and Iris odaesanensis Y.N.Lee. The Korean endemic plants were 6 taxa such as Carpinus laxiflora (Siebold & Zucc.) Blume, Eranthis byunsanensis B.Y.Sun, Philadelphus schrenkii Rupr., Lespedeza maritima Nakai, Vicia chosenensis Ohwi and Weigela subsessilis (Nakai) L.H.Bailey. The specific plants by floristic region were 36 taxa such as Pinus koraiensis Siebold & Zucc., Salix chaenomeloides Kimura, Anemone raddeana Regel, Chloranthus japonicus Siebold, Euphorbia pekinensis Rupr., Ilex macropoda Miq., Ajuga multiflora Bunge, Saussurea odontolepis Sch.Bip. ex Herd, Viola orientalis (Maxim.) W.Becker, Betula davurica Pall., Vitex negundo var. incisa (Lam.) C.B.Clarke and Cimicifuga heracleifolia Kom.. The naturalized plants were 36 taxa such as Fallopia dumetorum (L.) Holub, Lepidium apetalum Willd., Robinia pseudoacacia L., Trifolium repens L., Euphorbia supina Raf., Ipomoea purpurea Roth, Veronica persica Poir., Bidens pilosa L., Carduus crispus L., Xanthium canadense Mill., Bromus unioloides H.B.K. and Festuca arundinacea Schreb.. The invasive alien plants were 2 taxa such as Ambrosia artemisiifolia L. and Aster pilosus Willd.. The ratios of the urbanized index(UI), the naturalized index(NI) and the disturbed index(DI) were 11.2%, 7.9% and 18.2% each.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.721-727
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• 2002

In order to overcome trade-off among compositions, process and properties of the glasses with high PbO-base composition for PDP Rib, we studied glass crystallization and crystallization kinetics by Differential Thermal Analysis(DTA). Glass powder was obtained through melting/cooling/grinding, with 3 wt%TiO2 addition for the crystal nucleation and growth in $62PbO-19B_2O_3-10SiO_2-9(Al_2O_3-K_2O-BaO-ZnO)$(in wt%) composition glass. This powder was heat-treated for 1 to 10 h at $445^{\circ}C$ for nucleation. DTA measurements were performed to obtain the crystallization peak with $5∼25^{\circ}C/min$ heating rates. DTA crystallization peak temperature increased with increasing the heating rate and decreased with increasing the heating time. Because the Avrami parameter (n) was approximately 1, the surface crystallization occurred. The maximum nucleation time was 2 h.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

• Solar Energy
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• v.17 no.4
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• pp.3-11
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• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.833-840
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• 1996

Diamond thin films were deposited on p-type (100) Si wafers using MPECVD. Prior to deposition, ultrasonic striking was done to improve density of nucleation sites with dimond powder of 40~$60\mu$m size. Then diamond thin films were deposited at $^900{\circ}C$, 40Torr and 1000W microwave power using ${CH}_{4}$ and ${H}_{2}$ gases. The purity, the morphology and the microstructur'e and microdefects of diamond thin films were characterized by Raman spectroscopy, SEM and TEM, repectively. In Raman spectroscopy the peaks of non-diamond phase increased as ${CH}_{4}$, concentration increased. In SEM, the morphology of diamond thin films varied from crystalline to cauliflower as ${CH}_{4}$, concentration increased. As ${CH}_{4}$ con centration increased, the density of defects increased, with most defects being {III} twin. ${MTP}_{5}$, were formed with five (II]) planes. As these (Ill) Planes were twinned, ${MTP}_{5}$, represented five-fold symmetry. ]n the interfaces, defects in diamond thin films fanned out from small regions implying nucleation sites.