• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.64.1-64.1
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• 2011

다중접합 태양전지는 흡수대역이 다른 juntion으로 구성되어, 각각의 태양전지 간의 전류정합(current matching)이 효율 향상에 중요하다. 본 실험에서는 Top cell에 i-a-Si:H(Thinckness:100nm), Middle cell에는 i-a-SiGe:H(Thickness:800nm)을 적용하였고, bottom cell에는 i-${\mu}c$-Si:H(Thickness:1800nm), 수광부의 p-layer에 에 SiOx을 이용하여 triple juntion amorphous silicon solar cell(삼중접합태양전지)을 구현하였다. 이를 최적화 시키기 위해 ASA simulation을 이용하여 각 Cell의 intrinsic layer의 밴드갭을 가변하였다. 가변 결과 i-a-Si:H : 1.85 eV, i-a-SiGe:H: 1.6 eV, i-${\mu}c$-Si:H: 1.4 eV에서 태양전지 효율 14.5 %을 기록 하였다. 본 연구를 통해 Triple juntion cell에서의 intrinsic layer의 밴드갭 최적화를 구현해 볼 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권12호
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• pp.573-577
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• 2005

[$TiO_2$] sol and $SiO_2$ sol were prepared using sol-gel method. As $H_{2}O$/Alkoxide ratios increased, sol had cluster structure and as $H_{2}O$/Alkoxide ratios decreased, sol had linear structure. Gelation time of $TiO_2$ sol was faster than that of $SiO_2$ sol according to the time. In comparison with initial viscosity between $TiO_2$ sol and $SiO_2$ sol, $TiO_2$ sol was highest at $H_{2}O/Ti(OC_{3}H_{7})_{4}=5$, $SiO_2$ sol was almost constant according to $H_{2}O/Si(OC_{2}H_{5})_{4}$ ratios.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.471-475
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• 2000

P-type (100) Si wafer patterned with 1000$\AA$ SiO$_2$island was used as substrate and the Si films were deposited under low pressure using Si$_2$H$_{6}$-H$_2$gas mixture where the total gas flow rate and deposition pressure were 16.6sccm and 3.5mtorr, respectively. In this condition, we selectively obtained high-quality epitaxial Si layer of the 350~1050$\AA$ thickness. In order to extend the incubation period, we kept high pressure H$_2$ environment without Si$_2$H$_{6}$ gas for few minutes after first incubation period and then we conformed the existence of second incubation period.iod.

• E2M - 전기 전자와 첨단 소재
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• 제9권1호
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• 대한화학회지
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• 제38권1호
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• pp.55-60
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• 1994

유기규소 중합반응에서 나타나는 중간체 $Cp_2TiSiHPh(1),\;[Cp_2Ti]_2[{\mu}-HSi(HPh)][{\mu}-H]$ (2) 그리고 $[Cp_2TiSiH_2Ph]_2$ (3)화합물들의 전자구조를 EHT방법으로 연구하였다. 1 화합물의 안정한 구조는 Cs로 변형된 형태이고 $SiH_2$의 회전에너지는 약 14 kcal/mol로 나타났다. 전자결핍분자인 2와 3 화합물의 결합특성을 전자구조를 통하여 규명하였다. 또한 Ti금속이 Si-H의 $\sigma$ 결합과 작용할 가능성을 설명하였다.

• 천문학회보
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• 제36권2호
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• pp.145.2-145.2
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• 2011

We present the results of simultaneous observations of SiO v = 1, 2, J = 1-0, $^{29}SiO$ v = 0, J = 1-0, and $H_2O$ $6_{16}-5_{23}$ maser lines toward 152 known $H_2O$-only maser sources (the sources which are previously detected only in the 22 GHz $H_2O$ maser emission) using Yonsei and Tamna 21-m radio telescopes of the Korean VLBI Network from 2009 June to 2011 January. Both SiO and $H_2O$ maser emission were detected from 62 sources giving a detection rate of 40.8 %. SiO-only maser emission was detected from 27 sources, while $H_2O$-only maser was detected from 22 sources. We have identified 19 new detections of SiO maser emission for previous non-detection sources and 51 new detections of SiO maser for previously not observed sources. Characteristics of all observed sources in the IRAS two-color diagram is investigated including their evolutionary sequence and mutual relations between SiO and $H_2O$ maser emission. These observational results will be useful for statistical study of asymptotic giant branch (AGB) stars and future VLBI observation.

• 전기학회논문지P
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• 제55권2호
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• pp.57-61
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• 2006

This paper calculates and gives the analysis of mean energy in pure $SiH_4,\;Ar-SiH_4$ mixture gases ($SiH_4-0.5[%],\;5[%]$) over the range of $E/N =0.01{\sim}300[Td]$, p = 0.1, 1, 5.0 [Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $SiH_4$ and Ar, were used. The differences of the transport coefficients of electrons in $SiH_4$, mixtures of $SiH_4$ and Ar, have been explained by the deduced energy distribution functions for electrons and the complete collision cross-sections for electrons. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.145-148
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• 2006

The protocrystalline silicon (pc-Si:H) multilayer solar cell is very promising owing to its fast stabilization with low degradation against light irradiation. However, the pc-Si:H multi layers have not extensively been investigated in detail on its material characteristics yet. We present the material characteristics of pc-Si:H multilayer using a transmission electron microscopy(TEM), and Raman spectroscopy. In addition, we present the superior light-soaking behavior of the pc-Si:H mutt i layer solar cell. A TEM micrograph shows that a pc-Si:H multilayer has a repeatedly layered structure and crystalline-like objects in a-Si:H matrix. A Raman spectra introduces improved short-range-order and medium-range-order in pc-Si:H multilayer. As a result the excellent metastability of the pc-Si:H multilayer solar cell is primarily due to the repeatedly layered structure that improves a structural order in absorber layer.

• 한국결정학회지
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• 제3권2호
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• pp.98-110
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• 1992

Si(100) 기판위에 화학 기 장 증착법으로 상압에서 베타 탄화규소(β-SiC) 박막을 성장시키고 증착 조건이 박막의 물성 특히,기판 방향으로의 배향성과 결 정성에 미치는 영향에 대하여 고찰하여 보았다. 원료 가스로 SiH4와 CH4, 전달 가스로 H2를 사용하였다. 성장 온도, 원료 가스의 조성비,전달 가스에 대한 전 체 원료 가스의 비를 변화시키면서,이들 증착조건이 성장된 박막의 물성에 미치는 영향을 SEM, a-step, XRD, Raman Sepctroscopy, TEM 등을 이용하여 분석하였다. Chemical conversion과정을 통하여 SiC 버퍼층을 형성시킬 때 양질의 박막을 얻을 수 있었으며, CH4가SiH4에 대해 과량일때와 온도가 1150℃ 이상 일때 결정성이 좋아짐을 알 수 있었다. 또한, 결정성 이 좋아질수록 기판 방향으로의 배향성이 좋아짐도 관찰되었다. 결정성이 좋은 박막의 TEM분석 결과 성장 초기에 비해 표면으로 갈수록 결정이 커지는 것을 알 수 있었으며, 적층결함 및 쌍정 등의 분포정도는 원료 가스의 조성비와 무관하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.97.2-97.2
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• 2010

유리기판을 이용하여 제조되는 미세 결정질 실리콘 박막 태양전지에서 진성 반도체층(i ${\mu}c$-Si:H layer, i층)은 태양전지의 광 흡수층으로 사용되기 때문에 그 특성은 매우 중요하다. 특히, i층의 결정분율 변화는 태양광의 흡수파장 및 효율을 결정하여 준다. 본 연구에서는 i층 증착시 $SiH_4$ 가스의 농도 변화 및 $SiH_4$ 가스 profiling을 통하여 i층의 결정분율을 변화하였으며, 이에 따른 i층 단위박막과 미세결정질 태양전지 특성변화를 분석 하였다. i층의 $SiH_4$ 가스 농도가 증가함에 따라 i층 단위박막의 결정분율은 증가하였으며, 전기 전도도는 감소하였다. 또한, i층의 $SiH_4$ 가스 농도를 점차 증가하며 profiling 하여 증착한 박막은 동일 가스 농도로 증착한 박막보다 전기 전도도가 감소하였고, 증착속도는 증가하였다. 이와 같은 다양한 i층들은 'Raman spectroscopy'를 통하여 결정분율 변화를 측정하였다. 또한, 이 박막들을 광 흡수층으로 사용하는 미세결정질 태양전지를 제조하고, 태양전지의 효율, 양자효율, 암전류 특성들을 단위박막 특성과 연계하여 분석하였다.