A Study on Selective Epitaxial Growth using Disilane and Hydrogen gas in Low Pressure chemical vapor deposition

$Si_{2}H_{6}$ 와 $H_2$ Gas를 이용한 LPCVD 내에서의 선택적 Epitaxy 성장에 관한 연구

P-type (100) Si wafer patterned with 1000$\AA$ SiO$_2$island was used as substrate and the Si films were deposited under low pressure using Si$_2$H$_{6}$-H$_2$gas mixture where the total gas flow rate and deposition pressure were 16.6sccm and 3.5mtorr, respectively. In this condition, we selectively obtained high-quality epitaxial Si layer of the 350~1050$\AA$ thickness. In order to extend the incubation period, we kept high pressure H$_2$ environment without Si$_2$H$_{6}$ gas for few minutes after first incubation period and then we conformed the existence of second incubation period.iod.