• 한국세라믹학회지
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• 제51권5호
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• pp.459-465
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• 2014

In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.

• 한국결정성장학회지
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• 제9권6호
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• pp.563-569
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• 1999

수평형 반응로에서 $TMS[Si(CH_3)_4]-H_2$ 와 H$_2$가스를 이용하여 SiC 초미분말 합성시 최적 공정 조건을 알아보기 위하여 수치모사방법을 이용하였다. 이론적인 해석 결과, 반응온도가 증가함에 따라 TMS의 전환률은 증가하였지만, 수소유량이 증가함에 따라서는 TMS 전환률이 감소하였다. 또한 반응온도가 높을수록 기상의 충돌확률이 증가하여 최종 생성된 SiC 입자농도는 감소하였지만, 수소유량과 TMS 농도가 증가하는 경우에서는 생성된 입자농도가 증가하였다. 한편 입자크기는 반응온도와 초기 TMS 농도가 증가함에 따라 증가하였지만 수소유량이 증가하는 결향을 나타내었다. 이러한 반응온도, 수소유량 및 TMS 농도에 따른 입자크기 변화는 실제 실한 결과와 이론적으로 고찰한 결과가 일치하였다.

• 한국재료학회지
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• 제21권6호
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• pp.352-356
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• 2011

[ $Zn_{2(1-x)}Mn_xSiO_4$ ]$0.07{\leq}x{\leq}0.15$) green phosphor was prepared by solid state reaction. The first heating was at $900^{\circ}C-1250^{\circ}C$ in air for 3 hours and the second heating was at $900^{\circ}C$ in $N_2/H_2$(95%/5%) for 2 hours. The size effect of $SiO_2$ in forming $Zn_2SiO_4$ was investigated. The temperature for obtaining single phase $Zn_2SiO_4$ was lowered from $1100^{\circ}C$ to $1000^{\circ}C$ by decreasing the $SiO_2$ particle size from micro size to submicro size. The effect of the activators for the Photoluminescence (PL) intensity of $Zn_2SiO_4:Mn^{2+}$ was also investigated. The PL intensity properties of the phosphors were investigated under vacuum ultraviolet excitation (147 nm). The emission spectrum peak was between 520 nm and 530 nm, which was involved in green emission area. $MnCl_2{\cdot}4H_2O$, the activator source, was more effective in providing high emission intensity than $MnCO_3$. The optimum conditions for the best optical properties of $Zn_2SiO_4:Mn^{2+}$ were at x = 0.11 and $1100^{\circ}C$. In these conditions, the phosphor particle shape was well dispersed spherical and its size was 200 nm.

• 한국주조공학회지
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• 제13권4호
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• pp.350-358
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• 1993

Aluminum base composites reinforced with various amount of SiC particles and Mg contents have been investigated by different fabrication method for twenty-years. In this paper, how the decomposition and dissolution behaviors of $SiCp(20{\mu}m)$ in the melt of Al composites arised was studied. As the results, the decomposition and dissolution of SiCp into the melt of Al composites increased with increase of the temperature above $720^{\circ}C$, and holding time at a given melting temperature. Because SiC is thermodynamically unstable in this Al-SiCp composite at temperature above the liquidus, SiCp dissolves and reacts with Al in matrix to form $Al_4C_3$ according to following chemical equation $4Al+3SiC{\rightarrow}Al_4C_3+3Si$, Si decomposed and dissolved from SiCp increases Si content of matrix, while liquidus temperature of matrix decrease with increase of SiC content in matrix. The hardness of SiCp decreased with increase of the melting temperature, the hardness of the matrix /particle interface increased with increase of the melting temperature due to increase of the $Mg_2Si$ and $Al_4C_3$ intermetallic compounds, etc.

• 자원리싸이클링
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• 제19권5호
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• pp.31-43
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• 2010

석탄가스화 복합발전 시스템의 집진설비용 다공성 탄화수소 캔들 필터 제조를 위해 래밍성형과 진공 압출성형 공정에 외해 캔들필터 성형체를 제조하였다. 다양한 입도를 갖는 탄화규소 분말을 출발원료로 하였으며, 비점토계 무기 소결조제로 뮬라이트와 칼슘 카보네이트 분말을 사용하였다. 래밍성형과 진공 압출성형에 의한 캔들 필터 성형체들은 대기 분위기 $1400^{\circ}C$에서 2시간 소성하여 제조하였다. 캔들 필터 성형공정과 출발원료 입도가 소결된 다공성 캔들 필터 지지층의 기공율, 밀도, 강도 (굽힘강도, 압축강도)와 미세구조에 미치는 영향을 조사하였다. 래밍성형 공정에 외한 제조원 다공성 탄화규소 캔들 필터 소결체가 압출성형된 필터에 비해 높은 밀도 및 강도를 나타내고 있었으며, 그 최고 값은 각각 $2.0\;g/cm^3$과 45 MPa이었다. 한편 캔들 필터 지지층의 장기 내식성 평가 예측을 위하여 소결된 시편에 대해 석탄가스화 복합발전 $600^{\circ}C$의 모사 합성가스 분위기에서 2400시간 부식실험을 수행하였다.

• 한국세라믹학회지
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• 제26권4호
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• pp.583-587
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• 1989

Various $\alpha$-silicon carbied and colloidal graphite particles were sintered at 155$0^{\circ}C$ in vacuum atmosphere by reaction bonding sintering method, and the physical properties and microstructural analysis of specimen were investigated. With decreasing particle size, sintered density and 3-point bending strength of materials were increased and 3.2${\mu}{\textrm}{m}$ specimen showed high density and strength, 3.05g/㎤, 40kg/$\textrm{mm}^2$, respectively. The results of X-ray diffractometer and optical micrographs analysis showed that graphite and silicon melt reacted to convert to fine $\beta$-SiC particle and the body was changed to dense material.

• 한국세라믹학회지
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• 제34권12호
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• 에너지공학
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• 제2권2호
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• pp.187-193
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• 1993

인산형 연료전시에서의 인산 전해질을 지지하기 위한 다공성 메트릭스의 제조는 결합제인 PTFE와 각종입자의 크기를 갖는 SiC분말 또는 whisker를 혼합 사용하여 제작하였다. 메트릭스로서 갖추어야 될 기본조건중에 bubble pressure와 인산 전해질의 함침량은 전지운영시 전극성능에 가장 큰 영향을 미칠것이라 보아 다공성 전극의 pore size보다 작은 pore size를 가지는 메트릭스를 제작하였다. 각종 SiC입자 크기와 PTFE함량에 따라 제작된 matrix의 bubble pressure와 함침량을 측정하였으며 porosimeter를 이용하여 측정된 메트릭스의 다공도와 비교하여 인산형 연료전지에 사용할 수 있는 최적의 메트릭스 조건을 결정하였다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 춘계학술강연 및 발표대회
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• pp.11-11
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• 2002

Plastic deformation was observed by TEM around the intragranular SiC particles in the $Al_2O_3$ matrix for $Al_2O_3/SiC$ nanocomposite system. The dislocations are generated at selected planes and there is a tendency for the dislocations to form a subgrain boundary structure with low-angel grain boundaries and networks. In this study, dislocation generated in the $Al_2O_3$ matrix during cooling down from sintering temperatures by the highly localized thermal stresses within and/or around SiC particles caused from the thermal expansion mismatch between $Al_2O_3$ matrix and SiC particle was observed. In monolithic $Al_2O_3$ and $Al_2O_3/SiC$ microcomposite system. These phenomena is closely related to the plastic relaxation of the elastic stress and strain energy associated with both thermal misfitting inclusions and creep behaviors. The plastic relaxation behavior was explained by combination of yield stress and internal stress.

• 한국세라믹학회지
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• 제43권7호
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• pp.427-432
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• 2006

The preparation of SiC powder by SHS in the system of $SiO_2-Mg-C$ was investigated in this study. The effects of various processing parameters such as the initial pressure of inert gas in reactor, the content of Mg and C in mixture and the size of $SiO_2$ particles on the synthesis of SiC by SHS methode were investigated. The minimum initial pressure of inert gas in reactor for SHS reaction in this system was 5 atm, and as the pressure increased, and the concentration of unreacted Mg decreased. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure SiC was $SiO_2+2.5Mg+1.2C$. SiC powder synthesized in this condition had a mixture of ${\alpha}-SiC\;and\;{\beta}-SiC$ with an irregular shape and the particle size of $0.5{\sim}0.8{\mu}m$.