• 비파괴검사학회지
• /
• 제26권2호
• /
• pp.69-76
• /
• 2006

차세대 원자로로 부각되고 있는 고온가스로에서는 윈자로에서는 고온 안정성 및 핵분열생성물 차단 성능이 우수한 TRISO(tri-isotropic) 핵연료를 사용하고 있다. TRISO 핵연료 입자는 직경이 약 1mm인 구 형태로 입자의 중심에는 직경 0.5mm의 핵연료 커널(kernel)이 포함되며 커널 외곽을 코팅 층이 에워싸고 있다. 이 코팅 층은 완충(buffer) PyC(pyrolytic carbon)층, 내부 PyC층, SiC층, 그리고 외부 PyC층으로 구성되어 있다. 각 코팅 층의 두께는 수십-백${\mu}m$ 범위이고 사양으로 정해져 있으며, 본 연구에서는 각 코팅 층의 두께를 비파괴적으로 측정하기 위하여 마이크로포커스 X-선 발생장치와 고해상도 X-선 평판(flat panel) 검출기초 구성된 정밀한 X-선 래디오그래피 장치를 개발하였다. 개발된 마이크로 X-선 래디오그래피 장치를 이용하여 $UO_2$ 핵물질 $ZrO_2$를 커널로 사용한 모의 TRISO 핵연료 입사에 대한 투과 영상을 획득한 후 디지털 영상처리 기술을 이용하여 코팅 층 사이의 경계선이 구분 가능하도록 영상을 개선하고 디지털 영상처리 알고리듬을 개발하여 코팅 층의 두께를 파동으로 측정하였다.

• 한국세라믹학회지
• /
• 제42권3호
• /
• pp.150-154
• /
• 2005

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},\;Sm_{5}(O^{i}Pr)_{13},\;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{\circ}C$ were $19.48{\mu}C/cm^2$ and 3.40 V, respectively.

• 대한전기학회논문지
• /
• 제44권7호
• /
• pp.914-918
• /
• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1994년도 추계학술대회 논문집
• /
• pp.168-170
• /
• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 하계학술대회 논문집 C
• /
• pp.1454-1456
• /
• 1994

$Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were formed by spin coating method on $Pt/SiO_2/Si$ substrate at 3000rpm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500 - $800[^{\circ}C]$ for 1 hour. The final thickness of the thin films were about 4800[A]. The 100% ferroelectric perovskite phases precipitated under the heat treated at $700[^{\circ}C]$ for 1 hour. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films heat-treated at $700[^{\circ}C]$ for 1 hour showed good dielectric constant (812) property.

• 한국재료학회지
• /
• 제7권5호
• /
• pp.423-430
• /
• 1997

졸-겔 dip coating법에 의해 제조한 바륨페라이트 박막의 미세구조와 결정학적인 구조 특성에 관해 조사하였다. 기판에 형성된 바륨페라이트 입자는 침상 형태의 입자들로 구성되어 있었으며, C축은 장축 방향이었고, 막 두께가 증가함에 따라 침상형 입자들은 기판에 평행하게 배향하는 경향을 나타내었다. 박막은 바륨페라이트층, Ba, Fe, SiO$_{2}$로 구성되어 있는 중간층, 그리고 기판층인 SiO$_{2}$층으로 구성되어 있었으며, 중간층과 SiO$_{2}$층간의 계면은 Ba 와 SiO$_{2}$간의 화합물로 구성되어 있었다. 침상 형태의 입자는 95$0^{\circ}C$에서 3시간 열처리하므로써 완전히 소실하였고, 130$0^{\circ}C$에서 3시간 열처리하므로써 c면이 기판에 평행하게 위치하는 완전한 육각판상 형태의 입자로 변화되었다.

• 한국안전학회지
• /
• 제31권3호
• /
• pp.16-21
• /
• 2016

Carbon Fiber Reinforced Plastic(CFRP) composite with a higher specific strength and rigidity is more excellent than conventional metallic materials or other organic polymer of FRP. It has been widely used in vehicles, aerospaces and high technology industries which are associated with nuclear power fields. However, CFRP laminated composite has several disadvantages as like a delamination, matrix brittleness and anisotropic fibers that are the weak points of the crack initiation. In this present work, the reinforced silicon carbide(SiC) particles were added to the interlayer of CFRP laminates in order to mitigate the physical vulnerability affecting the cracking and breaking of the matrix in the CFRP laminated composite because of excellent specific strength and thermal shock resistance characteristics of SiC. The 1wt% of SiC particles were spread into the CFRP prepreg by using a spray coating method. After that, CFRP prepregs were laminated for the specimen. Also, the twill woven type CFRP prepreg was used because it has excellent workability. Thus the mechanical and fracture behaviors of the twill woven CFRP laminated composite reinforced with SiC particles were investigated with the acoustic emission(AE) method under a fracture test. The results show that the SiC particles enhance the mechanical and fracture characteristics of the twill CFRP laminate composite.

• 한국표면공학회지
• /
• 제22권2호
• /
• pp.69-77
• /
• 1989

Codeposion of inert particles particles in a metallic mateix by electroless plating process involves two phenomena. Firstly, the adsorption of inercles and secondly, the adsorption of inert particles on the cathode. In the present paper the first adsorption phenomenon and in the next paper the second ane are studied in greaterdetail for the Ni-SiCc, Ni-Al2AO3 and Ni-WC systems. Measurements of the Zeta potentials for the SiC and Al2AO3 particles have been in different electrolyte solutions and the ionic species adsorbed on the Particles studied. The addition of sodium acetate, trisodium citrate and sodium phosphinate to nikel sulface sruomotes the zeta potential of SiC and Al2O3 particles, but zeta phosphinate to nickel is more positive than Al2O3 particles although the amount of nickel ion adsorbrd on the Al2O3 particles become greater than that of SiC particles. It is suggested that this is due to adsortion of Na ion onto the surface SiC particles.

• 한국세라믹학회지
• /
• 제52권4호
• /
• pp.234-236
• /
• 2015

$Y_2O_3$-SiC composite membrane was dip-coated using $Y_2O_3$ sol solution; this membrane was compared with a non- coated one. Each membrane was characterized by XRD, FE-SEM and BET techniques. Hydrogen and CO permeation were tested with self-manufactured Sievert's type equipment. $Y_2O_3$ coating was enhanced for the selectivity of the membrane ($H_2$ versus CO). The hydrogen permeation was measured at 1 bar with increasing temperatures. In case of the coated membrane, hydrogen permeation was found to be $1.24{\times}10^{-7}mol/m^2sPa$ with perm-selectivity of 4.26 at 323 K.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.582-585
• /
• 2004

Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.