• 제목/요약/키워드: SiC boundary

검색결과 159건 처리시간 0.02초

부산 다대포 지역 해안 단구 제1면의 구정선 고도와 형성 시기 (The Elevation of Paleo-shoreline and Formation Age of the 1st Marine Terrace in Dadaepo, Busan, South Korea)

  • 신재열;홍영민;홍성찬
    • 한국지형학회지
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    • 제26권4호
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    • pp.67-79
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    • 2019
  • This study documents the level of paleo-shoreline and the timing of formation of the lowest marine terrace (1st terrace) distributed in Dadaepo, Busan, South Korea. In the study area, the elevation of paleo-shoreline of the 1st terrace is clearly identified as 5 meters above mean high tide based on the elevation of wave-cut platforms and the elevation of boundary between marine and terrestial sediments. This is well consistent with the fact that are found along the Southern coast of the Korean Peninsula including Daepo-dong, Sacheon-si. The timing of formation of the 1st terrace in Dadaepo is confirmed to have been deposited around 70,000~80,000 years BP (MIS 5a) according to OSL and IRSL dating ages. However, because the formation age of the 1st terrace in Sacheon-si Daepo-dong (Southerm coast) and Pohang-si Umok-ri (Eastern coast) previously identified as about 90,000~100,000 years BP (MIS 5c), further discussion of what is needed. Possibly, it can be interpreted that the sub-interglacial (MIS 5a and 5c) sea-level records during the last interglacial period are likely to be selective on land depending on regions.

저온 다결정 실리콘 박막 트랜지스터의 비정상적인 Hump 현상 분석 (Analysis of An Anomalous Hump Phenomenon in Low-temperature Poly-Si Thin Film Transistors)

  • 김유미;정광석;윤호진;양승동;이상율;이희덕;이가원
    • 한국전기전자재료학회논문지
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    • 제24권11호
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    • pp.900-904
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    • 2011
  • In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

Ta 확산 방지막 특성에 미치는 기판 바이어스에 관한 연구 (Study on diffusion barrier properties of Tantalum films deposited by substrate bias voltage)

  • 임재원;배준우
    • 한국진공학회지
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    • 제12권3호
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    • pp.174-181
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    • 2003
  • 본 논문은 탄탈 확산 방지막의 증착시 음의 기판 바이어스에 의한 탄탈막의 특성변화와 열적 안정성에 대해서 고찰하였다. 기판 바이어스를 걸지 않은 경우, 탄탈막은 원주형 모양의 결정 성장을 보이는 주상구조와 250 $\mu\Omega$cm의 높은 비저항값을 보였으나, 기판 바이어스를 걸어줌에 파라서 주상구조가 아닌 치밀한 미세구조와 표면이 평탄한 막이 형성되었고 비저항값도 현저히 감소되었으며, 특히 -125 V에서 증착된 탄탈막은 비저항값이 약 40 $\mu\Omega$cm로 이는 탄탈 벌크의 저항값 (13 $\mu\Omega$cm)에 근접한 값임을 알 수 있었다. 또한, 탄탈 확산 방지막의 열적 안정성에 대해서도, 기판 바이어스를 걸지 않은 탄탈막의 경우 $400^{\circ}C$에서 구리와 실리콘의 반응에 의해 비저항 값이 크게 증가한 결과에 비해, 기판 바이어스에 의해 증착된 탄탈막의 경우 $600^{\circ}C$까지 확산 방지막의 효과를 유지하고 있는 것으로 관찰되었다.

$Nb_2O_5$ 첨가제가 PTCR의 전기적 특성에 미치는 영향 (Effect of additives on the PTCR Electrical Properties with $Nb_2O_5$ addition)

  • 최경철;이능헌;박성현;김응혁;추순남;이덕출
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1885-1887
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    • 1999
  • 본 연구에서는 $BaTiO_3$를 기본조성으로하는 반도성 세라믹스인 PTC 써미스터에 $Nb_2O_5$을 미량 첨가하여 미세구조 및 PTCR의 전기적 특성에 대해서 연구하였다. 또한 복소 임피던스 측정을 통하여 $Nb_2O_5$ 첨가에 따른 grain, grain boundary 저항변화에 대해서도 고찰하였다. $(Ba_{0.9}Sr_{0.05}Ca_{0.05})TiO_3-0.01SiO_2-0.001MnCO_3$를 기본조성으로 하여 $Nb_2O_5$ 첨가량을 $0.15{\sim}0.2mol%$까지 변화시켰으며 소결조건은 소결온도 $1350^{\circ}C$, 2h 유지하였으며 냉각속도는 $100^{\circ}C/h$로 하였다 첨가된 Nb의 양이 증가할수록 grain의 크기는 점차로 작아졌으며 상온저항과 peak 저항이 함께 증가하였다. 0.15mol% 첨가된 시편의 경우 상온저항은 $19[\Omega]$이었으며 peak 저항은 $5{\times}10^6[{\Omega}]$정도가 되었다.

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Simulation of the Digital Image Processing Algorithm for the Coating Thickness Automatic Measurement of the TRISO-coated Fuel Particle

  • Kim, Woong-Ki;Lee, Young-Woo;Ra, Sung-Woong
    • Journal of Information Processing Systems
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    • 제1권1호
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    • pp.36-40
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    • 2005
  • TRISO (Tri-Isotropic)-coated fuel particle is widely applied due to its higher stability at high temperature and its efficient retention capability for fission products in the HTGR (high temperature gas-cooled reactor), one of the highly efficient Generation IV reactors. The typical ball-type TRISO-coated fuel particle with a diameter of about 1 mm is composed of a nuclear fuel particle as a kernel and of outer coating layers. The coating layers consist of a buffer PyC, inner PyC, SiC, and outer PyC layer. In this study, a digital image processing algorithm is proposed to automatically measure the thickness of the coating layers. An FBP (filtered backprojection) algorithm was applied to reconstruct the CT image using virtual X-ray radiographic images for a simulated TRISO-coated fuel particle. The automatic measurement algorithm was developed to measure the coating thickness for the reconstructed image with noises. The boundary lines were automatically detected, then the coating thickness was circularly by the algorithm. The simulation result showed that the measurement error rate was less than 1.4%.

ULSI용 Electroplating Cu 박막의 미세조직 연구 (Microstructural investigation of the electroplating Cu thin films for ULSI application)

  • 박윤창;송세안;윤중림;김영욱
    • 한국진공학회지
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    • 제9권3호
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    • pp.267-272
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    • 2000
  • electroplating(EP)법을 이용하여 ULSI용 Cu 박막을 제조하였다. seed Cu는 sputtering으로 증착하였으며, 확산방지막으로 TaN를 사용하였다. 제작된 EP Cu 박막은 seed Cu의 영향으로 열처리 조건에 관계없이 Cu(111)방향으로 강하게 우선 배향 하였다. 열처리 온도와 시간이 증가함에 따라 Cu박막의 미세조직이 non-columnar structure에서 약 2배 이상 결정립 성장하여 columnar structure로 바뀌었으며, 또한 as-deposit시 관찰되었던 stacking fault, twin, dislocation들이 상당히 줄어드는 것이 관찰되었다. Cu의 확산에 의하여 생기는 copper-silicide는 관찰할 수 없었으며, 이것은 두께 45nm의 TaN막이 $450^{\circ}C$, 30분 열처리시 확산방지막으로 충분한 역할을 한 것으로 판단된다. Cu(111)우선 배향과 열처리에 의한 결정립 성장 및 defect감소는 Cu 박막의 결정립계에서 발생하는 electromigration 현상을 상당히 줄일 수 있을 것으로 판단된다.

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다이아몬드 후막의 Erosion 특성 (Erosion of Free Standing CVD Diamond Film)

  • Kim, Jong-Hoon;Lim, Dae-Soon
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 1998년도 제28회 추계학술대회
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    • pp.67-74
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    • 1998
  • Two kinds of polished and unpolished freestanding films prepared by DC plasma CVD method were impacted by SiC particles to understand erosion mechanism. Erosion damage caused by solid impact was characterized by surface profilometer, scanning electron microscopy and Raman spectroscopy. Gradually decrease of surface roughness and sharp reduction of crystallinity for unpolished CVD films were observed with increasing erosion time. It was found that smaller grains of the diamond were removed in early stage of erosion process and larger grains were eroded with further impingement. By introduction of re-growth method on polished diamond, further understanding of erosion mechanism was achieved. Most of the surface fractures were initiated at the grain boundary.

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고온 필라멘트 다이아몬드 CVD에서 기체유동변수가 결정성장에 미치는 영향 (Effects of Gas Flow Variables on the Crystal Growth of Diamond in Hot Filament-Assisted CVD)

  • 서문규;이지화
    • 한국세라믹학회지
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    • 제31권1호
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    • pp.88-96
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    • 1994
  • Hot filament-assisted CVD was carried out to deposit diamond films on Si(100) substrate at 90$0^{\circ}C$ using a 1% CH4-H2 mixture gas. Deposition was made at various conditions of mass flow rate of the feed gas (30~1000 sccm), pressure (2.5~300 Torr), and filament-substrate distance (4~15 mm), and the deposited films were characterized by SEM, XRD, and Raman spectroscopy. As the flow rate increases, the growth rate also increased but the crystallinity of the film was degraded. A longer filament-substrate distance simply caused both the growth rate and the crystallinity to become poorer. On the other hand, the pressure variation resulted in a maximum growth rate of 2.6 ${\mu}{\textrm}{m}$/hr at 10 Torr and the best film quality around 50 Torr, exhibiting an optimum condition. The observed trends were interpreted in terms of the flow velocity-dependent pyrolysis reaction efficiency and mass transport through the boundary layer.

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전산기(電算機)를 이용(利用)한 주물(鑄物)의 응고해석(凝固解析)에 관하여 (A Analysis of Solidification of Castings by Computer)

  • 윤의박;조순형
    • 한국주조공학회지
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    • 제3권2호
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    • pp.83-91
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    • 1983
  • In this paper analytical and numerical methods fur analysis of solidification of castings are described, and the matrix method, one of numerical method, where the nodal point is designated on the element boundary was adapted. The cooling curve obtained by experimental values, when cast steel (0.29%C. 0.62%Si) was poured into $CO_2$ mold, is compared with that of computed values by exploiting computer (V77-600 Data Proceeding System, UNIVAC). The computed value is nearly approximation to the experimental. But the computed value shows a tendency that is a little higher than the experimental in solid-liquid coexisting temperature ranges and much lower than the experimental after solidification. It is considered to result from the lacks and difficulties of ultimately appropriate adaptation of various physical properties and also air cap between castings and mold.

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Aluminoborate계 유리질을 사용한 $\textrm{ZrO}_2$/Na $\beta$"-알루미나 복합재와 $\alpha$-알루미나간의 접합 (Joining of $\textrm{ZrO}_2$/Na $\beta$"-Alumina to $\alpha$-Alumina using Aluminoborate Glass Sealant)

  • 박상면;최기용;박정용;김경흠
    • 한국재료학회지
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    • 제9권1호
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    • pp.35-41
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    • 1999
  • In this study we investigated the effects of process variables on the bond strength, and its dependency upon the interfacial chemistry when the joined $ZrO_2$ toughened $Na\beta$"-alumina to $\alpha$-alumina using B$_2$$O_3$-$SiO_2$-Al$_2$$O_3$-CaO glass sealant. We observed that bond strength is mainly determined by the strength of the glass, which, in turn, depends on the glass composition established after joining reaction. Joining at $950^{\circ}C$ for 15min yielded the highest average bond strength of 66MPa. Different types of interfacial reaction seem to occur at each interface. After joining at $950^{\circ}C$ for 15min we found that Ca and Si diffuse much deeper(~15$\mu\textrm{m}$) into the $\beta$"-alumina composite than into the $\alpha$-alumina(<1$\mu\textrm{m}$) as a result of ion exchange reaction and more effective grain boundary diffusion. Thermal expansion coefficient of the glass was found to have changed more closely to those of the $\beta$"-alumina composite and $\alpha$-alumina, which put the glass under a slight compressive stress.ressive stress.

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