• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.232-233
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• 2008

The 4H-SiC schottky diodes treated by the various dry etch methods were fabricated and electrically characterized. The post etch process including an Inductively Coupled Plasma(ICP) etch and a Neutron Beam Etch(NBE) was performed after a high-temperature activation annealing without graphite cap in order to eliminate the damaged surface generated during the activation annealing. The reverse leakage current of diode treated by ICP was 1/35 times lower than that of the diode without any post etch at the anode bias of -100V, while the reverse leakage current of diode treated by NBE was 1/44 times lower at the same bias.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Nuclear Engineering and Technology
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• v.55 no.1
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• pp.201-208
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• 2023

The dependence of the electrical characteristics on the fast neutron fluence of an epitaxial 4H-SiC Schottky barrier diode (SBD) was investigated. The 30 MeV cyclotron was used for fast neutron irradiation. The neutron fluences evaluated through Monte Carlo simulation were in the 2.7 × 10¹¹ to 1.45 × 10¹³ neutrons/cm² range. Current-voltage and capacitance-voltage measurements were performed to characterize the samples by extracting the parameters of the irradiated SBDs. Neutron-induced defects in the epitaxial layer were identified and quantified using a deep-level transient spectroscopy measurement system developed at the Korea Atomic Energy Research Institute. As the neutron fluence increased from 2.7 × 10¹¹ to 1.45 × 10¹³ neutrons/cm², the concentration of the Z_1/2 defects increased by approximately 20 times. The maximum defect concentration was estimated as 1.5 × 10¹⁴ cm^-3 at a neutron fluence of 1.45 × 10¹³ neutrons/cm².

• JOURNAL OF ELECTRICAL WORLD
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• s.297
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• pp.66-72
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• 2001

1957년에 사이리스터가 발표된 이래 파워반도체디바이스(이하 ''파워디바이스''라 한다)의 발전과 더불어 이것을 사용하여 전력변환$\cdot$제어와 이를 응용한 파워일렉트로닉스 산업도 현저한 발전을 이루어 왔다. 21세기를 맞이하여 지구의 유한성을 강하게 인식하고 자원과 에너지를 고도이용하는 순환형 사회에로의 전환을 도모하는 기술혁신과 IT(정보기술)를 구사한 기술보급의 움직임이 활발해지고, 파워일렉트로닉스와 그 키파트인 파워디바이스가 수행하여야 할 역할은 점점 더 중요해지고 있다. 이와 같은 배경 하에서 파워디바이스는 인버터제어를 주목적으로 사이리스터, GTO(Gate Turn-off Thyristor), 바이폴라트랜지스터, MOSFET(Metal Oxide Silicon Field Effect Transistor)에서 IGBT(Insulated Gate Bipolar Transistor)에로 진전되고, 그 응용분야도 가전제품에서 OA, 산업, 의료, 전기자동차, 전철, 전력에 이르는 폭넓은 분야로 확대되었다. 현재 파워디바이스를 취급하는 전력의 범위는 수W의 스위칭 전원에서 GW급의 직류송전까지 9단위까지에 이르러 광범위한 전력 제어가 가능하게 되었다. 한편 응용의 중심이 되는 IGBT는, 고속화와 저손실화 및 파괴 내량의 향상을 지향한 개량을 거듭하여 제5세대제품이 나타나기 시작하였다. 또한 IGBT에 구동$\cdot$보호$\cdot$진단 회로 등을 넣어 모듈화한 IPM(Intelligent Power Module)이 그 편리성과 소형화를 특징으로 파워디바이스의 주역의 자리에 정착하였다. 가전$\cdot$산업$\cdot$자동차$\cdot$전철의 각 분야에서는 시장 니즈에 최적 설계된 IPM이 개발되게 되어 보다 더한 시장확대가 기대되고 있다. 또한 종래의 Si(실리콘)에 대신하는 반도체 재료로서 SiC(실리콘 카바이드 : 탄화규소)에 대한 기대가 크고 MOSFET나 SBD 등의 파워디바이스의 조기실용화에의 대처노력도 주목할 만하다.