• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.446-461
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• 2005

본 연구에서는 반응소결 탄화규소 다공질 지지체 개발을 위하여 SiC/C로 이루어진 성형체를 사용한 Si melt infiltration 공정 및 SiC/C/Si으로 이루어진 성형체를 사용하는 Si embedding 공정 개발이 이루어졌다. 개발된 반응소결 탄화규소 다공질 지지체의 기공률은 38% 이상이었으며 평균기공은 130 ${\mu}m$ 크기이었다. Si melt infiltration 방법으로 제조된 반응소결 탄화규소 다공질 지지체의 파괴강도는 상용 반응소결 탄화규소 지지체의 파괴강도보다 최대 200% 이상 높게 나타났다. 본 연구에서는 용융 Si의 침윤공정을 이용하여 반응소결 탄화규소 여과층을 갖는 반응소결 탄화규소 필터 및 그 제조공정이 개발되었다. 개발된 반응소결 탄화규소 필터의 필터 특성은 상용 탄화규소 필터의 필터 특성과 대체적으로 대등한 것으로 조사되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.214-217
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• 2004

숭화법을 이용한 탄화규소(Silicon carbide) 단결정 성장시 사용되는 원료의 상(phase)이 단결정 성장에 미치는 영향을 알아보기 위해 알파형 탄화규소 분말(${\alpha}-SiC$ powder)과 베타형 탄화규소 분말(${\beta}-SiC$ powder)을 각각 사용하였다. 알파형 탄화규소 분말을 사용한 경우에 단결정(single-crystal)을 성장할 수 있었으나, 베타형 탄화규소 분말을 사용하였을 때에는 다결정(poly-crystal)이 성장되었다. 다결정 형성요인에 관한 EPMA 분석결과, 베타형 탄화규소 분말의 탄소에 대한 실리콘의 원소조성비$(N_{Si}/N_C\;=\;1.57)$가 알파형 탄화규소 분말의 경우보다$(N_{Si}/N_C\;=\;0.81)$ 높음을 확인하였다. 따라서 흑연도가니(crucible) 내부의 실리콘 원자가 알파형 탄화규소 분말을 사용하는 경우보다 높은 과포화상태가 되어 종자정 표면에 미세한 실리콘 액적(droplet)이 중착되고 이것으로부터 일정하지 않은 방향성(random orientation)을 갖는 탄화규소 다결정(다양한 방향성을 갖는 다형 포함)이 성장한 것으로 실리콘과 탄소 원소에 대한 EPMA 지도(map) 결과를 통해 확인할 수 있었다.

• Resources Recycling
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• v.12 no.3
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• pp.25-30
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• 2003

The synthesis of SiC used for the parts of the gas turbine and the heat exchanger, was carried out. In this study, wire cutting slurry of silicon wafer and the graphite rod of spent zinc-carbon battery were applied to the starting materials for the synthesis. The powders of Si or Si+SiC were obtained from the waste material by filtration, gravity separation and magnetic separation. Graphite powder was produced by dismantling, grinding and gravity separation from spent zinc-carbon battery. The synthesis of SiC could be completed from the mixture powders of Si and C or Si+SiC and C at the condition of equivalent ratio of Si and C, atmosphere of Ar or vacuum, temperature of above 1$600^{\circ}C$ and 2 hours reactions. The purity of synthesized Si-C was above 99%.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05c
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• pp.225-230
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• 1996

탄화규소(SiC)가 도포된 핵연료 제조를 위해 고온 연소 합성법(Self-propagating High Temperature Synthesis, SHS)이 적용되었으며, 반응물로 규소(Si) 분말, 규소 박막 (Si-thin film), 흑연 분말과 카본(C) 화이버가 사용되었다. 규소 박막은 프라즈마가 강화된 화학증착법(a microwave pulsed electron cyclotron resonance plasma enhanced chemical vapor deposition)으로 준비되었다. 그 결과 규소와 탄소의 고온 연소 합성반응 생성물은 반응물이 분말이거나 박막에 관계없이. 탄화규소(SiC)가 합성되었으며, 생성물의 형상(morphology)은 초기 탄소의 형상에 의존하였다. 본 연구를 통해 고온 연소 합성법이 탄화규소와 탄소가 도포된 핵연료 제조에 적용 가능함을 알 수 있었다.

• Resources Recycling
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• v.31 no.6
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• pp.60-65
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• 2022

This study presents the carburization process for recycling sludge, which was formed during silicon wafer machining. The sludge used in the carburization process is a mixture of silicon and silicon carbide (SiC) with iron as an impurity, which originates from the machine. Additionally, the sludge contains cutting oil, a fluid with high viscosity. Therefore, the sludge was dried before carburization to remove organic matter. The dried sludge was washed by acid cleaning to remove the iron impurity and subsequently carburized by heat treatment under vacuum to form the SiC powder. The ratio of silicon to SiC in the sludge was varied depending on the sources and thus carbon content was adjusted by the ratio. With increasing SiC content, the carbon content required for SiC formation increased. It was demonstrated that substoichiometric SiC_x (x<1) was easily formed when the carbon content was insufficient. Therefore, excess carbon is required to obtain a pure SiC phase. Moreover, size reduction by high-energy milling had a beneficial effect on the suppression of SiC_x, forming the pure SiC phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.212-217
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• 2022

Large thermal stress due to the difference between silicon carbide and graphite's coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.891-896
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• 2003

Novel fabrication technique was developed for high strength Reaction-Bonded SiC (RBSC) hot gas filter for use in IGCC (Integrated Gasification Combined Cycle) system. The room and high temperature fracture strengths for Si-melt infiltrated reaction-bonded SiC were 50-123, and 60-66 MPa, respectively. The average pore size was 60-70 $\mu\textrm{m}$ and the porosity was about 34 vol％. RBSC infiltrated with molten silicon showed improved fracture strength at high temperature, as compared to that of clay-bonded SiC, due to SiC/Si phase present within SiC phase. The thickness for SiC/Si phase was increased with increasing powder particle size of SiC from 10 to 34 $\mu\textrm{m}$. Pressure drop with dust particles showed similar response as compared to that for Schumacher type 20 filter. The filter fabricated in the present study showed good performance in that the filtered powder size was reduced drastically to below 1 $\mu\textrm{m}$ within 4 min.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.948-954
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• 2002

Porous reaction bonded SiC with high fracture strength was developed using Si melt infiltration method for use of the support layer in high temperature gas filter that is essential to develop the next generation power system such as integrated gasification combined cycle system. The porosity and pore size of porous RBSC developed in this study were in the range of 32∼36% and 37∼90 ${\mu}m$ respectively and the maximum fracture strength of porous RBSC fabricated was 120 MPa. The fracture strength and thermal shock resistance of porous RBSC fabricated by Si melt infiltration were much improved compared to those of commercially available porous clay bonded SiC due to the formation of the strong SiC/Si interface between SiC particles. The characteristics of pore structure of porous RBSC was varied depending on the amounts of residual Si as Well as the size of SiC particle used in green body.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.6
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• pp.271-276
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• 2020

In this study, an amorphous SiC block was manufactured using polycarbosilane (PCS), an organosilicon polymer. The dense SiC blocks were easily fabricated in various shapes via pyrolysis at 1100℃, 1200℃, 1300℃, 1400℃ after manufacturing a PCS molded body using cured PCS powder. Physical and chemical properties were analyzed using a thermogravimetric analyzer (TGA), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and universal testing machine (UTM). The prepared SiC block was decomposed into SiO and CO gas as the temperature increased, and β-SiC crystal grains were grown in an amorphous structure. In addition, the density and flexural strength were the highest at 1.9038 g/㎤ and 6.189 MPa of SiC prepared at 1100℃. The manufactured amorphous silicon carbide block is expected to be applicable to other fields, such as the previously reported microwave assisted heating element.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.15-21
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• 2008

SiC has an excellent resistance to oxidation and corrosion, high temperature strength and good thermal conductivity. However, it is difficult to density because of its highly covalent bonding characteristics. Hot-press sintering process was applied to fabricate fully densified SiC ceramics with carbon and boron addition as a sintering additive. The addition of carbon improved the mechanical properties of SiC because it could induce a fine and homogeneous microstructure by the suppression of abnormal growth of SiC grain. Also, the addition of carbon could control the phase transformation of SiC. The phase transformation of 6H to 4H increased with sintering temperature but the addition of carbon decreased that kind of phase transformation.