• 한국산업융합학회 논문집
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• 제26권6_2호
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• pp.1019-1024
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• 2023

Ceramic materials have excellent material properties such as stability at high temperatures, chemical stability, corrosion resistance, and wear resistance, so they are applicable even in extreme environments of high temperature and pressure. In particular, silicon carbide can be applied in the field of structural ceramics due to its characteristics of high strength, hardness, corrosion resistance, and heat resistance even at high temperatures. In this study, considering the application of silicon carbide materials to next-generation turbines, silicon carbide materials were manufactured using a liquid phase sintering method. When manufacturing liquid phase sintered silicon carbide, sintering additives were added to lower the sintering temperature and densify the material. In Al₂O₃-SiO₂, it was confirmed that the secondary product of the sintering additive was observed as a slightly dark area and was evenly distributed overall, and the fracture surface of Al₂O₃-SiO₂ was in the form of transgranular fracture in which cracks progressed along the crystal plane, and the flexural strength for Al₂O₃-SiO₂ was about 445.6 MPa.

• 전자통신동향분석
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• 제33권6호
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• pp.1-11
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• 2018

Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.

• 한국세라믹학회지
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• 제47권6호
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• pp.491-497
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• 2010

In this paper, we employed the classical molecular dynamics simulations using Tersoff's potential to calculate the elastic constants of the silicon carbide (SiC) crystal at high temperature. The elastic constants of the SiC crystal were calculated based on the stress-strain characteristics, which were drawn by the simulation using LAMMPS software. At the same time, the elastic constants of the SiC ceramics were measured at different temperatures by impulse excitation testing (IET) method. Based on the simulated stress-strain results, the SiC crystal showed the elastic deformation characteristics at the low temperature region, while a slight plastic deformation behavior was observed at high strain over $1,000^{\circ}C$ temperature. The elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa by increasing the temperature from RT to $1,250^{\circ}C$. When compared to the experimental values of the SiC ceramics, the simulation results, which are unable to obtain by experiments, are found to be very useful to predict the stress-strain behaviors and the elastic constant of the ceramics at high temperature.

• 한국결정성장학회지
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• 제24권6호
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• pp.242-245
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• 2014

탄화규소의 화학기상증착 중에 두께 균일성을 향상시키기 위하여 평행하게 회전하는 3단 서셉터를 포함하는 CVD 장치에 대하여 전산유체역학(CFD) 시뮬레이션을 수행하였다. 실제 증착 실험에서는 단 간의 두께 균일성은 상당히 만족스러웠으나 같은 단 위에서는 위치에 따라 두께가 균일하지 못한 3C-SiC 상이 얻어지는 것을 확인하였다. 불균일의 원인으로는 서셉터의 회전 속도에 따른 영향으로 판단되었다. CFD 결과로부터 단 간의 균일성을 향상시키기 위해서는 120도 분기 노즐을 주입구에 설치하는 것이 바람직할 것으로 판단되었으며 단 내의 균일도 향상은 회전 속도를 줄임으로써 가능할 것으로 생각된다. 이렇게 제작된 탄화규소가 증착된 흑연 부품은 고경도, 내산화성 및 분진 억제 특성을 갖고 있어서 반도체용 부품으로 사용될 수 있다.

• 한국세라믹학회지
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• 제43권3호
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• pp.152-155
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• 2006

Silicon carbide ceramics seeded with 10-30 wt% SiC whiskers are fabricated by hot pressing and annealing. A quantitative texture analysis including calculation of the Orientation Distribution Function (ODF) is used for obtaining the degrees of preferred orientation of the fabricated samples. The microstructure and crystallographic texture are discussed with respect to the effect of ${\beta}-SiC$ whisker seeds on the resulting fracture toughness values. The SEM microstructures and the texture data reveal a correlation between texture and fracture toughness anisotropy.

• 한국세라믹학회지
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• 제49권6호
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• pp.625-630
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• 2012

Highly porous silicon carbide (SiC) ceramics were fabricated from polysiloxane, SiC and carbon black fillers, AlN-$Y_2O_3$ additives, and poly (ether-co-octene) (PEOc) and expandable microsphere templates. Powder mixtures with a fixed PEOc content (30 wt%) and varying SiC filler contents from 0-21 wt% were compression-molded. During the pyrolysis process, the polysiloxane was converted to SiOC, the PEOc generated a considerable degree of interconnected porosity, and the expandable microspheres generated fine cells. The polysiloxane-derived SiOC and carbon black reacted and synthesized nano-sized SiC with a carbothermal reduction during a heat-treatment. Subsequent sintering of the compacts in a nitrogen atmosphere produced highly porous SiC ceramics with porosities ranging from 78 % to 82 % and a flexura lstrength of up to ~7 MPa.

• 한국광학회지
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• 제27권3호
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• pp.106-113
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• 2016

본 논문에서는 37채널을 갖는 적응광학계용 SiC(Silicon Carbide) 변형거울의 파면 보상 성능 검증에 관한 내용을 다룬다. 컴퓨터 시뮬레이션을 통해 SiC 변형거울의 파면 보상 성능을 예측하였고, 실제 closed-loop 적응광학계를 구성하여 파면 보상 성능을 확인 하였다. Closed-loop 적응광학계는 광원, 위상판, SiC 변형거울, 고속 샥-하트만 센서 그리고 제어용 컴퓨터로 구성되어있다. 회전하는 위상판에 의해 왜곡된 파면을 샥-하트만 센서로 측정하고, SiC 변형거울을 이용하여 왜곡된 파면을 보상해주는 시스템이다. 결과적으로 closed-loop 적응광학계에서 500 Hz의 속도로 PV(Peak-to-Valley) $0.3{\mu}m{\sim}0.9{\mu}m$, RMS(Root-Mean-Square) $0.06{\mu}m{\sim}0.25{\mu}m$의 왜곡된 파면을 PV $0.1{\mu}m$, RMS $0.03{\mu}m$이하로 보상시킬 수 있었다.

• 한국세라믹학회지
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• 제35권12호
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• 한국세라믹학회지
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• 제48권1호
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• pp.1-5
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• 2011

Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. RF Thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) has been utilized for synthesis of high purity SiC powder from cheap inorganic solution (Tetraethyl Orthosilicate, TEOS). It is found that the powders by thermal plasma consist of SiC with free carbon and amorphous silica ($SiO_2$) and, by thermal treatment and HF treatment, the impurities are driven off resulting high purity SiC nano-powder. The synthesized SiC powder lies below 30 nm and its properties such microstructure, phase composition, specific surface area and free carbon content have been characterized by X-ay diffraction (XRD), field emission scanning electron microscopy (FE-SEM), thermogravimetric (TG) and Brunauer-Emmett-Teller (BET).

• Journal of Power Electronics
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• 제18권1호
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.