• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.336-340
• /
• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Journal of the Korean Solar Energy Society
• /
• v.33 no.2
• /
• pp.11-17
• /
• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• Land and Housing Review
• /
• v.11 no.1
• /
• pp.87-94
• /
• 2020

To implement the planning of zero-energy buildings, their energy performance must be improved, and renewable energy applications must also be included. To accelerate the use of renewable energies in such buildings, BIPVs should be actively used in windows and on roofs. Window-type BIPVs are being developed in various forms depending on the size, composition, area ratio of the window, specification of glass, and so on. To analyze the applicability of various solar cells as window-type BIPVs, in this study, we evaluated their applicability, at the current development level, by analyzing the indoor illuminance, heat gain and heat loss; the cooling, heating, and lighting energy levels; and the generation performance of the various solar cells. To enhance the future applicability of window type BIPV, we analyze the overall energy performance of the building, according to changes in visible light transmittance and generation efficiency. The main research results are as follows. The area ratios above the standard illuminance, based on the window type and according to the VLT, were in order of low-e glazing, a-Si window, DSSC window, and c-Si window. The heat gain of the semi-transparent solar cell winodw was remarkably low. The energy consumption of buildings was highest in the order of c-Si window, DSSC window, a-Si window, and clear low-e window. However, in the case of including the power generation performance of the solar cell, the energy consumption was found to be high in order of DSSC window, c-Si window, a-Si window, and clear low-e window. In the future, if a window-type BIPV is developed, we believe that improvement in power generation performance and improvement in visible light transmittance will be needed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.491.2-491.2
• /
• 2014

Generally, silicon heterojunction solar cell has intrinsic and n-type of hydrogenated amorphous silicon (a-Si:H) as passivation layer and BSF layer. In this study, antimony, novel material, deposited on back side of the heterojunction solar cell as passivation and BSF layer to substitute the a-Si:H and the characteristics of the solar cell such electrical properties and optical properties were analyzed. And SIMS analysis was carried out to obtain the depth profile of the BSF layer which was deposited by laser annealing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.3
• /
• pp.236-240
• /
• 2012

Limiting thermal exposure time using rapid thermal processing(RTP) has emerged as promising simplified process for manufacturing of solar cell in a continuous way. This paper reports the simplification of co-firing using RTP. Actual temperature profile for co-firing after screen printing is a key issue for high-quality metal-semiconductor contact. The plateau time during the firing process were varied at $450^{\circ}C$ for 10~16 sec. Glass frit in Ag paste etch anti-reflection layer with plateau time. Glass frit in Ag paste is important for the Ag/Si contact formation and performances of crystalline Si solar cell. We achieved 17.14% efficiency with optimum conditions.

• Solar Energy
• /
• v.8 no.1
• /
• pp.68-73
• /
• 1988

In the glass/TCO/p-i-n a-Si/Al type of amorphous silicon solar cell, the effects on solar cell efficiency and metastability for the various kinds of TCO analyzed by SAM and ESCA, which was used to measure the diffusion profiles of In and Sn and the Fermi energy shifts in the TCO/p interface respectively. Indium which diffused into a-Si p-layer did not have any significant effects on the Fermi level shift of p-layer when the content of $B_2H_6/SiH_4$ in p-layer was at 1 gas%. The cell fabricated on $SnO_2$ turned out to have the best cell photovoltaic characteristics. ITO fabricated by electron beam deposition system, which was shown to have the greatest rate of diffusion of Indium in ITO/p interface produced the worst metastability among the cells tested.

• Journal of the Korean Solar Energy Society
• /
• v.40 no.5
• /
• pp.35-45
• /
• 2020

Photovoltaic (PV) power system prices have been steadily dropping in recent years due to their mass production and advances in relevant technology. Crystalline silicon (c-Si wafers) account for the largest share of the price of solar cells; reducing the thickness of these wafers is an essential part of increasing the price competitiveness of PV power systems. However, reducing the thickness of c-Si wafers is challenging; typically, phenomena such as bowing and cracking are encountered. While several approaches to address the bowing phenomenon of the c-Si solar cells exist, the only method to study the crack phenomenon (related to the strength of the c-Si solar cells) is the bending test method. Moreover, studies on determining the strength properties of the solar cells have focused largely on c-Si wafers, while those on the strength properties of front and rear-side electrodes and SiNx, the other components of c-Si solar cells, are scarce. In this study, we analyzed the strength characteristics of each layer of c-Si solar cells. The strength characteristics of the sawing mark direction produced during the production of c-Si wafers were also tested. Experiments were conducted using a 4bending tester for a specially manufactured c-Si solar cell. The results indicate that the back side electrode is the main component that experienced bowing, while the front electrode was the primary component regulating the strength of the c-Si solar cell.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.313.2-313.2
• /
• 2013

본 연구에서는 기존에 연구된 Solar Cell 보다 구조 및 제작이 단순한 $Al/Al_2O_3/Si$(100) Solar cell을 제작하여 평가하였다. 기판으로는 p-type Si(100), 0.5~2 ${\Omega}{\cdot}cm$을 사용하여 chemical cleaning 후 ALD(Atom Layer Deposition)법으로 Al2O3 터널링 절연막을 증착하였으며, 박막의 두께를 1~10 nm로 변화시켜 MIS 커패시터의 터널링 효과를 평가하였다. MIS 커패시터의 전기적 특성평가를 위해 누설전류 밀도-전계 특성은 pA meter/DC Voltage source를 사용하였고, 커패시턴스-전압특성, D-factor 특성은 precision LCR meter를 사용하였다. $Al/Al_2O_3/Si$(100) Solar cell의 특성평가를 위해 300~1100nm 파장영역에 따른 양자 효율을 평가하기 위해 Quantum Efficiency system (QE)을 사용하였고, Stanard Test Conditions 100 $mW/cm^2$, AM1.5, $25^{\circ}C$ 조건의 Voc, Isc, Jsc, FF (Fill Factor) 및 Efficiency(%)를 평가하기 위해 Solar simulator를 이용하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.450-451
• /
• 2008

Amorphous silicon Solar cell has n-i-p structure in general, and each layer's thickness and doping concentration are very important factors which are as influential on efficiency of salar cell. Using AFORS HET simulation to get the high efficiency, by adjusting n layer's thickness and doping concentration, p layer's doping concentration. The optimized values are a-Si:H(n)'s thickness of 1nm, a-Si:H(n)r's doping concentration of $2\times10^{20}cm^{-3}$, a-Si:H(p+)r's doping concentration of $1\times10^{19}cm^{-3}$. After optimization, the solar cell shows $V_{oc}$=679.5mV, $J_{sc}$=39.02mA/$cm^2$, FF=83.71%, and a high Efficiency=22.21%. Though this study, we can use this study for planning or manufacturing solar cell which has high efficiency.

• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.145-148
• /
• 2006

The protocrystalline silicon (pc-Si:H) multilayer solar cell is very promising owing to its fast stabilization with low degradation against light irradiation. However, the pc-Si:H multi layers have not extensively been investigated in detail on its material characteristics yet. We present the material characteristics of pc-Si:H multilayer using a transmission electron microscopy(TEM), and Raman spectroscopy. In addition, we present the superior light-soaking behavior of the pc-Si:H mutt i layer solar cell. A TEM micrograph shows that a pc-Si:H multilayer has a repeatedly layered structure and crystalline-like objects in a-Si:H matrix. A Raman spectra introduces improved short-range-order and medium-range-order in pc-Si:H multilayer. As a result the excellent metastability of the pc-Si:H multilayer solar cell is primarily due to the repeatedly layered structure that improves a structural order in absorber layer.