• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.17-22
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• 2005

Organic-inorganic hybrid type thin films are the next generation candidates as low-k materials. SiOC films are analyzed the bonding structure by the red and blue chemical shift using the fourier transform infraredspectra. Conventional chemical shift of organic chemistry is a red shift, but hybrid type SiOC films were observed the red and blue shift. The chemical shift originates from the interaction between the C-H bond and high electronegative atoms, and the blue shift in SiOC films is caused by the porosity due to the increase of the electron rich group such as much methyl radicals. The bonding structures of SiOC films are also divided into the Si-O-C cross-link structure and the Si-O-C cage-link structure due to the chemical shifts. The Si-O-C cross-link structure progressed the adhesion attributed to the C-H bond elongation in the reason of the red shift, and the dielectric constant also decreases.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.517-520
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• 2004

Organosilicate films are promising porous low-dielectric materials, which can replace the silicon dioxide films. It was researched that organosilicate films have two different chemical shifts according to the increase of the flow rate ratio. There are the red shift due to the electron deficient substitution group, and the blue shift of the electron rich substitution group. Among these chemical shifts, the blue shift from $1000 cm^{-1}$ to $1250 cm^{-1}$ was related with the formation of pores. The methyl radicals of the electron-rich substitution group terminate easily the Si-O-Si cross-link, and the Si-O-C cage-link near $1057 cm^{-1}$ is originated from the cross-link breakdown due to much methyl radicals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.354-361
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• 2008

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.