• Korean Journal of Materials Research
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• v.1 no.4
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• pp.214-220
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• 1991

The effects of $SiO_2$ reactive ion etching (RIE) in $CHF_{3/}C_2F_6$ on the surface properties of the underlying Si substrate were studied by X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) techniques. Angle-resolved XPS analysis was carried out as non-destructive depth profile one for investigating the chemical bonding states of silicion, carbon, oxygen and fluorine. The residue layer consists of C-F polymer. O-F bond was found on the top of the polymer layer and Si-O, Si-C and Si-F bonds were detected between Si substrate and polymer film. A 60nm thick damaged layer of silicon surface mainly contains carbon and fluorine.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.69-76
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• 2003

For lithium secondary microbattery anode, the tin oxide thin films with Si addition (0, 2, 6, 10, 20 ㏖%) were prepared with R.F. magnetron sputtering at substrate temperature of 30$0^{\circ}C$ and Ar:O$_2$=7:3 atmosphere. As Si addition amount increased, Si-O bonding density increased and Sn-O bonding density decreased. The addition of optimum Si amount led the decrease of Sn oxidation state so that the irreversible capacity reduced and cycle characteristic enhanced during charge-discharge test. SnO$_2$films with 6 ㏖% Si had the highest reversible capacity of 700 mAh/g after 100 cycles.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.738-739
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• 2008

The SiOC film of carbon centered system was prepared using bistrimethylsilymethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of he SiOC film were analyzed by the contact angle and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/O2 flow rate ratio and he dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and here is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed he chemical shift.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.240-240
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• 2003

SiC 섬유의 고온강도를 향상시키기 위한 소결조제로 boron, aluminum 등을 사용할 수 있다. 본 연구에서는 폴리카보실란에 aluminum precursor를 첨가한 후 중합반응을 거쳐 Al-contained polycarbosilane을 합성하였다. 합성된 Al-contained polycarbosilane을 용융방사하여 섬유화 하고 열분해 공정을 통해 Si-Al-C-O 나노복합 섬유를 제조하였다. 먼저 aluminum butoxide와 polycarbosilane(commercial)을 200m1 xylene에 용해시켜 14$0^{\circ}C$에서 1시간 동안 reflux하였다. evaporator를 이용하여 xylene를 제거한 후 autoclave에서 25$0^{\circ}C$/30$0^{\circ}C$ 중합과정을 통해 가교결합 시켰다 이와 같이 합성된 시료는 ICP분석을 통해 aluminum 함량을 확인하였고 FT-IR(Fig.1) 및 GPC분석(Fig.2)으로부터 화학구조 및 분자량변화를 확인하였다. aluminum 첨가량이 증가함에 따라 Si-H/Si-$CH_3$의 결합크기의 비가 감소하였으며 이로부터 aluminum butoxide와 polycarbosilane의 가교결합이 이루어진 것으로 보이며 중합 후 분자량의 증가 또한 가교결합에 의한 결과로 사료된다 열무게감량(TGA) 측정 결과는 40$0^{\circ}C$부터 유기리간드의 분해가 일어나며 80$0^{\circ}C$이상에서 세라믹화 과정이 완료되었음을 알 수 있었다 또한 aluminum 첨가량이 증가함에 따라 세라믹 수율도 증가하였음을 확인하였다. 합성된 aluminum-contained polycarbosilane은 20$0^{\circ}C$에서 1시간 동안 불융화과정을 거쳐 환원 및 진공 분위기에서 고온 열처리하였으며 이로부터 얻어진 시료에 대해 XRD분석을 수행하였다. SEM과 TEM을 이용하여 미세구조를 관찰하였다.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.603-608
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• 2001

$MO-SiO_2$ (M = Zn, Sn, In, Ag, Ni) binary silica gels were synthesized by sol-gel method and their structural change with the kind of metal ions was characterized by XRD, FT- IR and $^{29}$Si-NMR. Although X-ray analysis showed partial recrystallization of $AgNO_3$ in $Ag-SiO_2$gel, crystalline phase formed by the bonding between metal ion and the silica matrix didn't appear in all $MO-SiO_2$ gels. The FT-IR analysis showed that Zn, Sn and in partially formed Si-O-M bonding in silica matrix and made an shift of absorption peak to by Si-O-Si symmetrical vibration. In addition, $^{29}Si-NMR$ studies showed that Zn, Sn and In didn't affect sol-gel process of silica and were linked with non-bridging oxygen of the linear silica structure, which formed imperfect network because of low temperature sol-gel process. Ag and Ni make a role of catalysis on sol-gel process, resulting in densifying the silica network structure.

• Journal of Korean Ophthalmic Optics Society
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• v.8 no.1
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• pp.7-10
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• 2003

Quarternary $SrO-B_2O_3-Al_2O_3-SiO_2$ glasses were fabricated as a function of $R({\equiv}SrO\;mole%/B_2O_3\;mole%)$ and $K({\equiv}(Al_2O_3+SiO_2)\;mole%/B_2O_3\;mole%)$. The structures of these glasses were investigated through Infrared absorption spectra. When R increased, the intensities of the absorption bands around $1,200{\sim}1,600cm^{-1}$ resulting from the B-O stretching vibration bond in the symmetrical trigonal $BO_3$ units decreased, and these of the absorption bands around $800{\sim}1,200cm^{-1}$ caused by the B-O stretching vibration bond of the tetrahedral $BO_4$ units varied. Also, the intensities of the absorption bands for the B-O stretching vibration band in trigonal $BO_3$ units increased and these of the bands for B-O stretching vibration bond in tetrahedral $BO_4$ units decreased as K increased.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.1
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• pp.57-61
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• 2002

Ternary $SrO-B_2O_3-SiO_2$ glasses were fabricated as a function of R(${\equiv}SrO\;mole%/B_2O_3\;mole%$) and K(${\equiv}SiO_2\;mole%/B_2O_3\;mole%$). The structures of these glasses were investigated through Infrared transmittance, vicker's hardness, and refractive index. The results indicated : First, in the infrared transmittance spectra, when R increased, the intensities of the absorption bands around $1200{\sim}1600cm^{-1}$ resulting from the B-O stretching vibration bond in the symmetrical trigonal $BO_3$ units decreased, and these of the absorption bands around $800{\sim}1200cm^{-1}$ caused by the B-O stretching vibration bond of the tetrahedral $BO_4$ units varied. Also, the intensities of the absorption bands for the B-O stretching vibration bond in trigonal $BO_3$ units increased and these of the bands for B-O stretching vibration bond in tetrahedral $BO_4$ units decreased as K increased. Second, the increase and the decrease of vicker's hardness values for these glasses depended on the fraction of $BO_4$ units and it of $BO_3$ units, respectively. The refractive index of these glasses mostly depended on the SrO contents and only slightly depended on the fraction of $BO_4$ and $BO_3{^-}$ units.