• Korean Journal of Materials Research
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• v.6 no.1
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• pp.124-129
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• 1996

TiN 기판상에 CVD와 무전해 도금을 이용하여 구리막을 성장시킬 때 여러 가지 전처리에 따른 증착 양상의 변화에 관하여 조사하였다. Cu(hfac)2를 선재(precursor)로 사용하여 CVD 증착을 실시할 때 각 전처리에 따른 TiN상의 구리막의 덮힘성(coverage)향상은 Pd-HF 활성화 처리>>HF dip> RF remote plasma의 순이었다. 특히 Pd-HF 활성화 처리를 해줄 경우 거의 완전한 연속막을 얻을수 있었으며 scotch tape peel test 결과 매우 양호한 부착특성을 보였으나, 이에 비해 전처리를 해주지 않은 경우에는 오랜 시간이 경과되어도 연속막으로 성장하지 못하고 섬모양의 큰 결정립을 이룰 뿐이었다. 이러한 차이는 Pd-HF 활성화 처리에 의해 표면에 미세하게 형성된 Pd층이 구리의 핵생성과 부착특성을 크게 향상시켰기 때문인 것으로 사료되며 이러한 효과는 무전해 도금의 경우에도 마찬가지였다. 그리고 기판과 증착온도에 따른 선택성을 보면 35$0^{\circ}C$이하에서는 pd-HF 활성화 처리에 의해서 SiO2에 대하여 TiN으로의 선택성을 가지나 그 이상의 온도에서는 선택성이 상실되었다.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.200-205
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• 1998

The nature, degree, and evolution of contact damage from Hertzian contacts in silicon nitride-boron nitride composites($Si_3N_4-BN$) are investigated as a function of boron nitride content. The strong deviations of indentation stress-strain from elastic response indicate exceptional plasticity in $Si_3N_4-BN$. The absence of ring cracks or cone cracks on the surfaces is observed, indicating a high damage tolerance. Subsurface quasi- plastic deformation by shear stress is considerable and microdamage is widely distributed within the region below the contact. Shear faults associated with local microfailures play a precursor role in plasticity of this material. When boron nitride content increases, $Si_3N_4-BN$ becomes softer and more quasi-plastic.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• Composites Research
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• v.30 no.2
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• pp.116-125
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• 2017

The purpose of this study is to develop silicon carbide fiber showing an excellent mechanical properties under highly oxidative conditions at high temperature. Polycarbosilane(PCS) as a preceramic precursor was used for making the SiC fiber. PCS fiber was taken by melt spinning method followed by melting the PCS at $300{\sim}350^{\circ}C$ in N2 gas. The Curing of PCS fiber was carried out in air oxygen chamber, prior to high temperature pyrolysis. Degree of cure was calculated by characteristic peak's ratio of Si-H to $Si-CH_3$ in FT-IR spectra before and after curing of PCS fiber. The properties of SiC fiber was affected greatly by the degree of cure. The SiC fiber produced by controlling fiber tension during heat treatment showed good properties. The SiC fiber exposed to $1000^{\circ}C$ at air from 1 min. up to maximum 50 hrs showed around 60% reduction in tensile strength. We found that large amount of carbon content on the fiber surface after long-term exposure has resulted in lower tensile strength.

• Journal of the Korean Society of Safety
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• v.21 no.2 s.74
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• pp.35-45
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• 2006

Cobalt catalysts for gas mask loaded on various supports such as $Al_{2}O_{3},\;TiO_{2}$, AC(activated carbon) and $SiO_{2}$ were used to examine influences of calcination temperatures and reaction temperatures for CO oxidation. $Co(NO_{3})_2{\cdot}6H_{2}O$ was used as cobalt precursor and the catalysts were prepared by incipient wetness impregnation. The catalysts were characterized using XRD, TGA/DTA, TEM, $N_{2}$ sorption, and XPS. For the catalytic activity, support was in the order of ${\gamma}-Al_{2}O_{3}>TiO_{2}>SiO_{2}>AC\;and\;Al_{2}O_{3}$. The catalytic activity at lower temperature than $80^{\circ}C$ showed that with the increase of reaction temperature, cobalt catalysts on ${\gamma}-Al_{2}O_{3},\;TiO_{2},\;AC\$ has the negative activation energy but that of $SiO_{2}$ was positive.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.665-672
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• 2000

The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.677-681
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• 2009

$In_xGa_{1-x}N$ alloys with 20-nm-thickness were deposited onto Mg:GaN/AlN/SiC substrates by MOCVD at $800\;^{\circ}C$. TMGa, TMIn and $NH_3$ were used as the precursor of gallium, indium and nitrogen, respectively. The mole ratio of indium in $In_xGa_{1-x}N$ films varied between 0 and 0.2. The energy-band-gaps of the films were obtained from the photoluminescence and cathodoluminescence peaks. The mole ratios of $In_xGa_{1-x}N$ films were calculated by applying Vegard's law to XRD results. The energy-band-gap versus indium composition plot for $In_xGa_{1-x}N$ alloys were well fit with a bowing parameter of 2.27.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.28-35
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• 1997

Effects of rapid thermal annealing on the characteristics of Cu films deposited from the (hfac)Cu(VTMS) precursor and on the barrier properties of TiN layers were studied. By the post-annealing, the electrical characteristics of Cu/TiN and the microstructures of Cu films were significantly changed. The properties of Cu films were more sensitive to the annealing temperature than the annealing time. Sheet resistance started to increase above $400^{\circ}C$, and the interreaction between Cu and Ti and the oxidation of Cu layer were observed above $600^{\circ}C$. The grain growth of Cu with the (111) preferred orientation was found to be most pronounced at $500^{\circ}C$. It revealed that the optimum annealing conditions for MOCVD-Cu/PVD-TiN structures to enhance the electrical characteristics without degradation of TiN barriers were in the range of $400^{\circ}C$.

• Journal of Industrial Technology
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• v.20 no.A
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• pp.247-256
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• 2000

Precursor gels with the composition of $xZrO_2{\cdot}(100-x)SiO_2$ systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence on tetragonal to monoclinic transformation of $ZrO_2$ was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal $ZrO_2$ occurred through 3-dimensional diffusion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about $310{\sim}325{\pm}10kJ/mol$. The growth of $t-ZrO_2$, in proportion to the cube of radius, increased with increasing heating temperature and heat-treatment time. It was suggested that the diffusion of Zr4+ions by Ostwald ripening was rate-limiting process for the growth of $t-ZrO_2$ crystallite size. The fracture toughness of $xZrO_2{\cdot}(100-x)SiO_2$ systems glass ceramics increased with increasing crystallite size of $t-ZrO_2$. The fracture toughness of $30ZrO_2{\cdot}70SiO_2$ system glass ceramics heated at $1,100^{\circ}C$ for 5 h was $4.84Mpam^{1/2}$ at a critical crystaliite size of 40 nm.