• 한국세라믹학회지
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• 제32권4호
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• pp.489-497
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• 1995

The DDS((CH3)2SiCl2)＋H2 gas mixture, where C atoms exist in excess in the molecules, was used for chemical vapor deposition of SiC in order to prevent codeposition of free Si in MTS(Ch3SiCl3)＋H2 system. The deposition rate was more rapid than MTS, however differ from that of MTS, it decreased after shwoing a maximum at 140$0^{\circ}C$. The stoichiometry was highly improved by using the DDS as a precursor, although there exist a little pyrolytic C at 150$0^{\circ}C$. The preferred orientation was (220) in MTS, however, it changed to (111) in DDS. The microstructure of the layer deposited at lower temperature were dense, however it grew coarse with the increase in the temperature.

• Tribology and Lubricants
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• 제4권2호
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• 전자공학회논문지D
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• 제35D권6호
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• pp.46-53
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• 1998

저온 공정으로 제작되는 다결정 실리콘 박막 트랜지스터의 활성층을 이중 활성층(a-Si/a-SiN/sub x/)으로 제작하는 공정을 제안하고 다결정 실리콘 박막 트랜지스터를 제작하였다. 본 논문에서는 활성층의 아래쪽 실리콘 박막에 약간의 질소기를 첨가한 후 그 위에 순수한 비정질 실리콘 박막을 증착하여 엑시머 레이저의 에너지로 비정질 실리콘 박막을 결정화하여 사용하였다. 이중 활성층 (a-Si/a-SiN/sub x/)의 경우, 하부층의 NH₃/SiH₄ 유속비가 증가함에 따라, 상부 a-Si 층의 결정 성장이 촉진됨을 알 수 있었으나, n/sup +/ poly-SiN/sub x/ 층의 전도도 특성을 고려해 볼 때, NH₃/SiH₄ 유속비는 0.11의 상한치를 가짐을 알 수 있었다. 전계 방출 전류에 영향을 미치는 광학적 밴드갭의 경우, poly-Si 박막에 비해 증가하였으며, NH₃/SiH₄ 유속비가 0.11 이하에서도 0.1eV 정도의 증가를 보여, 이로 인하여 소자 제작시 전계 방출 전류가 억제될 것을 예상할 수 있다.

• Bulletin of the Korean Chemical Society
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• 제8권4호
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• pp.242-246
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• 1987

The hydrogen abstraction reactions of $SiH_4, SiH_2Cl_2 \;and\; SiHCl_3$ by ground state chlorine atoms generated photochemically from chlorine molecules have been studied at temperatures between 15 and $100^{\circ}C.$ The absolute rates for the reactions have been obtained by a competition technique using ethane as a competitor. The rate expressions ($in cm^3/mol/s$) are found to conform to an Arrhenius rate law: $k_{SiH_4} = (7.98 {\pm} 0.42) {\times} 10^{13}$ exp $[-(1250 {\pm}20)/T].$ $k_{SiH_2Cl_2} = (2.25 {\pm} 0.12) {\times} 10^{15}$ exp[-(1010 ${\pm}$ 10)/T]. $k_{SiHCl_3} = (9.04 {\pm} 0.28) {\times} 10^{14}\; exp[-(1200 {\pm} 10)/T].$ The activation energies obtained from this study represent the same trend as with the carbon analogues, while this trend was not found with respect to the bond dissociation energies among silicon compound homologues. These anomalous behaviors were interpreted in terms of electronic effects and of the structural differences between these compounds.

• 폴리머
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• 제25권4호
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• pp.468-475
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• 2001

$rac-Et(Ind)_2ZrCl_2,\;rac-Me_2Si(Ind)_2ZrCl_2,\;rac-Me_2Si(Cp)_2ZrCl_2,\;(n-BuCp)_2ZrCl_2$ 등의 메탈로센 촉매와 공촉매인 개질 메틸알루민옥산(MMAO)을 이용한 에틸렌과 노르보르넨의 공중합에서 1-헥센(H), 1-옥텐 및 1-데센 등과 같은 ${\alpha}$-올레핀을 제3단량체로 첨가할 때, 중합조건, 촉매의 구조 및 ${\alpha}$-올레핀의 종류와 첨가량이 촉매 활성, 생성 중합체의 열적 성질 및 조성 등에 미치는 영량을 조사하였다. ${\alpha}$-올레핀의 첨가량에 따른 촉매 활성 및 중합체의 열적 성질의 변화는 촉매구조 뿐만 아니라 ${\alpha}$-올레핀의 구조에도 의존하였다. $rac-Et(Ind)_2ZrCl_2/MMAO$계에서 촉매 활성이 높았고 중합체의 $T_g$ 제어가 용이하였으며, 제3단량체로 H를 첨가한 경우에 가장 높은 촉매활성의 증가를 확인하였다.

• 대한전자공학회논문지
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• 제23권6호
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• pp.801-806
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• 1986

The effect of SiH2Cl2 -HCl gas on the growth rate of epitaxial layer is studied. The temperature, pressure and gas mixing ratio of SiH2Cl2 and HCl are varied to study the growth rate dependence and selective Si epitaxy. The P-n junction diode is fabricated on the epitaxial layer and electrical characteristics are examined. Also, using selective Si epitaxy, a possibility of thin dielectric isolation process, that gives an independent isolation width on the mask dimension, is examined.

• 한국재료학회지
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• 제14권2호
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• Elastomers and Composites
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• 제54권4호
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• pp.286-293
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• 2019

In this study, flexible poly(ethylene-ter-1-hexene-ter-divinylbenzene) was prepared using four types of metallocene catalysts (rac-Et(Ind)₂ZrCl₂, rac-SiMe₂(Ind)₂ZrCl₂, rac-SiMe₂(2-Me-Ind)₂ZrCl₂, (C₅Me₅)TiCl₂[O-2,6-ⁱPr₂(C₆H₃)]) and two types of borate catalysts (trityl tetrakisborate and dimethylanilinium tetrakisborate). The yield, catalytic activity, molecular weight, structure, composition, and thermal properties of the terpolymers prepared using the various catalysts and cocatalyst systems were evaluated. Epoxidation of the terpolymers was successfully performed and this transformation was studied by ¹H NMR and FTIR.

• 대한방사선기술학회지:방사선기술과학
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• 제20권1호
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• pp.65-69
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• 1997

[ $Mg_2SiO_4(La.Ho)$ ] thermoluminescent phosphor was made by putting the $MgCl_2.6H_2O$ and $SiO_2$ and by doping the rare earth element of $LaCl_3.7H_2O$ and $HoCl_3$. The heating rate is $10^{\circ}C/sec$ for the thermoluminescent phosphor. Two peaks are found in the measured $Mg_2SiO_4(La.Ho)$ Tl glow curve at $152^{\circ}C$ and $205^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The peak value at $205^{\circ}C$ is the most sensitive to X-ray among the glow peaks. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies for Ho and La are $0.52{\sim}1.77\;eV$ respectively.

• 대한전자공학회논문지SD
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• 제37권6호
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• pp.9-16
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• 2000

본 논문은 다결정실리콘의 점착방지를 위한 새로운 화학적 방법에 의한 코팅방법을 제시하였고 그 특성을 확인하였다. 이 코팅방법은 최근에 사용되어지고 있는 Octadecyltrichlorosilane (OTS) 나 1H,1H2H,2H-perfluorodecyltrichlorosilane (FDTS) 같은 Monoalkyltrichlorosilanes (MTS, $RSiCl_3$) 계열의 물질 대신에 Dialkyldichlorosilanes (DDS, $R2SiCl_2$) 계열의 물질을 이용하여 다결정실리콘의 표면을 바꾸는 방법이다. 이 DDS 계열의 화학물질 중에서 Dichlorodimethylsilane (DDMS, $(CH_3)2SiCl_2$)는 쉽게 구할 수 있고 다결정실리콘의 표면을 친수성에서 소수성으로 간단하고 빠른 방법으로 바꿀 수 있는 장점이 있다. 본 논문에서는 DDMS 코팅된 다결정실리콘으로 만들어진 외팔보를 3 mm길이까지 제작하여 점착현상이 전혀 일어나지 않았음을 확인하였고 이를 실제 구조물에 적용하였다.