• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.489-497
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• 1995

The DDS((CH3)2SiCl2)＋H2 gas mixture, where C atoms exist in excess in the molecules, was used for chemical vapor deposition of SiC in order to prevent codeposition of free Si in MTS(Ch3SiCl3)＋H2 system. The deposition rate was more rapid than MTS, however differ from that of MTS, it decreased after shwoing a maximum at 140$0^{\circ}C$. The stoichiometry was highly improved by using the DDS as a precursor, although there exist a little pyrolytic C at 150$0^{\circ}C$. The preferred orientation was (220) in MTS, however, it changed to (111) in DDS. The microstructure of the layer deposited at lower temperature were dense, however it grew coarse with the increase in the temperature.

• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.46-53
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• 1998

A new method to form the double structured active layers of a-Si/a-SiN$_{x}$ of polycrystalline thin film transistor is proposed and poly-Si TFTs employed double structure active film are fabricated. Nitrogen ions were added to bottom amorphous silicon active film(a-SiN$_{x}$ ) and pure a-Si film deposition on a-SiN$_{x}$ was followed. The XeCl excimer laser was irradiated to crystallize double structure active film. The grain growth of upper a-Si film was also promoted in the double structured active layers of a-Si/a-SiN$_{x}$ due to the mitigation of solidification process of lower a-SiN$_{x}$ layer. Our experimental results show that the ratio of NH$_3$/SiH$_4$ is required to maintain below 0.11 for the reduction of contact resistance of n$^{+}$ poly-SiN$_{x}$ layer.r.

• Bulletin of the Korean Chemical Society
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• v.8 no.4
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• pp.242-246
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• 1987

The hydrogen abstraction reactions of $SiH_4, SiH_2Cl_2 \;and\; SiHCl_3$ by ground state chlorine atoms generated photochemically from chlorine molecules have been studied at temperatures between 15 and $100^{\circ}C.$ The absolute rates for the reactions have been obtained by a competition technique using ethane as a competitor. The rate expressions ($in cm^3/mol/s$) are found to conform to an Arrhenius rate law: $k_{SiH_4} = (7.98 {\pm} 0.42) {\times} 10^{13}$ exp $[-(1250 {\pm}20)/T].$ $k_{SiH_2Cl_2} = (2.25 {\pm} 0.12) {\times} 10^{15}$ exp[-(1010 ${\pm}$ 10)/T]. $k_{SiHCl_3} = (9.04 {\pm} 0.28) {\times} 10^{14}\; exp[-(1200 {\pm} 10)/T].$ The activation energies obtained from this study represent the same trend as with the carbon analogues, while this trend was not found with respect to the bond dissociation energies among silicon compound homologues. These anomalous behaviors were interpreted in terms of electronic effects and of the structural differences between these compounds.

• Polymer(Korea)
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• v.25 no.4
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• pp.468-475
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• 2001

For copolymerization of ethylene and norbornene initiated by various metallocene catalysts such as $rac-Et(Ind)_2ZrCl_2,\;rac-Me_2Si(Ind)_2ZrCl_2,\;rac-Me_2Si(Cp)_2ZrCl_2,\;and\;(n-BuCp)_2ZrCl_2$ with modified methylaluminoxane(MMAO) cocatalyst, the ${\alpha}$-olefins such as 1-hexene(H), 1-octene and 1-decene were added as a 3rd monomer. In this situation, the effects of the polymerization condition, the catalyst structure as well as the structure and the amount of added ${\alpha}$-olefin on the catalyst activity as well as the properties and structure of polymer were examined. As results, it was found that the catalyst activity and thermal property of polymer depended on not only catalyst structure but also ${\alpha}$-olefin structure. For $rac-Et(Ind)_2ZrCl_2/MMAO$ catalyst system, it was possible to get high activity and controllable $T_g$ of polymer. Among ${\alpha}$-olefins, H as a 3rd monomer exhibited the maximum enhancement in catalyst activity.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.801-806
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• 1986

The effect of SiH2Cl2 -HCl gas on the growth rate of epitaxial layer is studied. The temperature, pressure and gas mixing ratio of SiH2Cl2 and HCl are varied to study the growth rate dependence and selective Si epitaxy. The P-n junction diode is fabricated on the epitaxial layer and electrical characteristics are examined. Also, using selective Si epitaxy, a possibility of thin dielectric isolation process, that gives an independent isolation width on the mask dimension, is examined.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• Elastomers and Composites
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• v.54 no.4
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• pp.286-293
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• 2019

In this study, flexible poly(ethylene-ter-1-hexene-ter-divinylbenzene) was prepared using four types of metallocene catalysts (rac-Et(Ind)₂ZrCl₂, rac-SiMe₂(Ind)₂ZrCl₂, rac-SiMe₂(2-Me-Ind)₂ZrCl₂, (C₅Me₅)TiCl₂[O-2,6-ⁱPr₂(C₆H₃)]) and two types of borate catalysts (trityl tetrakisborate and dimethylanilinium tetrakisborate). The yield, catalytic activity, molecular weight, structure, composition, and thermal properties of the terpolymers prepared using the various catalysts and cocatalyst systems were evaluated. Epoxidation of the terpolymers was successfully performed and this transformation was studied by ¹H NMR and FTIR.

• Journal of radiological science and technology
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• v.20 no.1
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• pp.65-69
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• 1997

[ $Mg_2SiO_4(La.Ho)$ ] thermoluminescent phosphor was made by putting the $MgCl_2.6H_2O$ and $SiO_2$ and by doping the rare earth element of $LaCl_3.7H_2O$ and $HoCl_3$. The heating rate is $10^{\circ}C/sec$ for the thermoluminescent phosphor. Two peaks are found in the measured $Mg_2SiO_4(La.Ho)$ Tl glow curve at $152^{\circ}C$ and $205^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The peak value at $205^{\circ}C$ is the most sensitive to X-ray among the glow peaks. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies for Ho and La are $0.52{\sim}1.77\;eV$ respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.9-16
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• 2000

In order to achieve stiction-free polysilicon surfaces, we have suggested a new class of chemical coating precursors and confirmed their excellent characteristics. The strategy is to adopt dialkyldichlorosilanes (DDS, $R2SiCl_2$) instead of monoalkyltrichlorosilanes (MTS, $RSiCl_3$) such as octadecyltrichlorosilane (OTS) or 1H,1H2H,2H-perfluorodecyltrichlorosilane (FDTS). Dichlorodimethylsilane (DDMS, $(CH_3)2SiCl_2$) in this study is commercially available DDS with two short chains. DDMS in aprotic media spontaneously deposits on the hydrophilic polysilicon surface, which is completely changed to hydrophobic one. When polysilicon surface is exposed to DDMS solution at room temperature, anti-stiction property and hydrophobicity are clearly comparable to FDTS. DDMS is even superior to MTS in reliability and easy handling, which provides high yield. Since interactions among precursor molecules are reduced, conglomeration both in homogeneous solution and on surface can be effectively avoided. Even the cantilevers of 3 mm in length can be protected successfully from the stiction and the final quality of the modified surfaces is much less dependent on temperature. And no difference was found between the processes in ambient environment and in dry box. In addition, DDMS has advantages of remarkably reduced process time and low cost.