• BMB Reports
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• 제45권11호
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• pp.659-664
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• 2012

Extracellular superoxide dismutase (EC-SOD) overexpression modulates cellular responses such as tumor cell suppression and is induced by $IFN{\gamma}$. Therefore, we examined the role of EC-SOD in $IFN{\gamma}$-mediated tumor cell suppression. We observed that the dominant-negative protein kinase C delta ($PKC{\delta}$) suppresses $IFN{\gamma}$-induced EC-SOD expression in both keratinocytes and melanoma cells. Our results also showed that $PKC{\delta}$-induced EC-SOD expression was reduced by pretreatment with a PKC-specific inhibitor or a siRNA against $PKC{\delta}$. $PKC{\delta}$-induced EC-SOD expression suppressed cell proliferations by the up-regulation of p21 and Rb, and the downregulation of cyclin A and D. Finally, we demonstrated that increased expression of EC-SOD drastically suppressed lung melanoma proliferation in an EC-SOD transgenic mouse via p21 expression. In summary, our findings suggest that $IFN{\gamma}$-induced EC-SOD expression occurs via activation of $PKC{\delta}$. Therefore, the upregulation of EC-SOD may be effective for prevention of various cancers, including melanoma, via cell cycle arrest.

• Molecules and Cells
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• 제40권6호
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• pp.393-400
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• 2017

Type 2 diabetes mellitus (T2DM) is a chronic metabolic disease characterized by lack of insulin and high glucose levels. T2DM can cause bone loss and fracture, thus leading to diabetic osteoporosis. Promoting osteogenic differentiation of osteoblasts may effectively treat diabetic osteoporosis. We previously reported that Sirtuin 1 (Sirt1), a $NAD^+$-dependent deacetylase, promotes osteogenic differentiation through downregulation of peroxisome proliferator-activated receptor (PPAR) ${\gamma}$. We also found that miR-132 regulates osteogenic differentiation by downregulating Sirt1 in a $PPAR{\beta}/{\delta}$-dependent manner. The ligand-activated transcription factor, $PPAR{\alpha}$, is another isotype of the peroxisome proliferator-activated receptor family that helps maintain bone homeostasis and promot bone formation. Whether the regulatory role of $PPAR{\alpha}$ in osteogenic differentiation is mediated via Sirt1 remains unclear. In the present study, we aimed to determine this role and the underlying mechanism by using high glucose (HG) and free fatty acids (FFA) to mimic T2DM in MC3T3-E1 cells. The results showed that HG-FFA significantly inhibited expression of $PPAR{\alpha}$, Sirt1 and osteogenic differentiation, but these effects were markedly reversed by $PPAR{\alpha}$ overexpression. Moreover, siSirt1 attenuated the positive effects of $PPAR{\alpha}$ on osteogenic differentiation, suggesting that $PPAR{\alpha}$ promotes osteogenic differentiation in a Sirt1-dependent manner. Luciferase activity assay confirmed interactions between $PPAR{\alpha}$ and Sirt1. These findings indicate that $PPAR{\alpha}$ promotes osteogenic differentiation via the Sirt1-dependent signaling pathway.

• Korean Chemical Engineering Research
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• 제52권5호
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• pp.667-671
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• 2014

본 연구에서는 전구체 각각의 독립제어가 가능한 이성분계 금속산화물을 얻기 위해 졸-겔법으로 합성한 실리카 나노입자를 $TiO_2$ 전구체와 교반시켜 전기방사법을 이용하여 실리카가 고르게 분산된 $TiO_2$ 나노섬유를 성공적으로 제작하였다. 제작된 나노섬유는 FE-SEM, XRD, EDS를 이용해 구조적 특성분석과 UV-VIS, 광촉매 반응기를 통해 광촉매 특성 분석을 하였다. 그 결과, 실리카가 분산된 $TiO_2$ 나노섬유는 실리카가 분산되지 않은 $TiO_2$ 나노섬유 보다 광촉매 효율이 10% 가량 향상되었다. 이는 실리카 나노입자가 첨가됨으로써 $TiO_2$가 흡수하지 못하는 380~440 nm 가시광선 영역을 흡수하여 광학적 특성 향상되었으며 Ti와 Si 두 금속산화물간에 $Br{\o}nsted$ acid site가 생성되어 OH 라디칼을 증가시킴으로써 광조사에 의해 여기된 전자를 잡아 재결합 손실을 억제하는 역할을 하여 화학적 특성이 개선되어 광촉매 효율이 증가되었을 것으로 사료된다.

• 마이크로전자및패키징학회지
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• 제23권2호
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• pp.73-78
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• 2016

집적회로(Integrated Circuit) 소자의 트랜지스터(transistor) 밀도 증가는 소자에서 발생하는 열 방출(heat dissipation)의 급격한 상승을 초래하여 열 문제를 발생시키고, 이는 소자의 성능과 열적 신뢰성에 영향을 크게 미친다. 열문제의 해결방안 중 본 연구에서는 냉매를 이용한 액체 냉각방법을 연구하였으며, 실리콘 웨이퍼에 관통실리콘비아(through Si via)와 마이크로 채널(microchannel)을 딥 반응성 이온 애칭(deep reactive ion etching)로 구현한 후 유리기판과 어노딕본딩을 통하여 액체 냉각 구조를 제작하였다. 제작된 마이크로 채널 위에 Ag, Cu 또는 Cr/Au/Cu bump를 스크린프린팅(screen printing) 방법으로 형성하였고, 범프의 유무를 통해 액체 냉각 전후의 냉각 모듈의 실리콘 표면온도의 변화를 적외선현미경으로 분석하였다. Cr/Au/Cu bump가 탑재된 액체 냉각 모듈의 경우 가열온도 $200^{\circ}C$에서 냉각 전후의 실리콘 표면 온도 차이는 약 $45.2^{\circ}C$이고, 전력밀도 감소는 약 $2.8W/cm^2$ 이었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• The Korean Journal of Ceramics
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• 제7권1호
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• pp.36-40
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• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.

• 한국재료학회지
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• 제18권7호
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• pp.379-383
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• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.81-85
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• 2013

웨이퍼 적층 기술은 반도체 전 후 공정을 이용한 효과적인 방법으로 향후 3D 적층 시스템의 주도적인 발전방향이라고 할 수 있다. 웨이퍼 레벨 3D 적층 시스템을 제조하기 위해서는 TSV (Through Si Via), 웨이퍼 본딩, 그리고 웨이퍼 thinning의 단위공정 개발 및 웨이퍼 warpage, 열적 기계적 신뢰성, 전력전달, 등 시스템적인 요소에 대한 연구개발이 동시에 진행되어야 한다. 본 연구에서는 웨이퍼 본딩에 가장 중요한 역할을 하는 Cu CMP (chemical mechanical polishing) 공정에 대한 특성 분석을 진행하였다. 8인치 Si 웨이퍼에 다마신 공정으로 Cu 범프 웨이퍼를 제작하였고, Cu CMP 공정과 oxide CMP 공정을 이용하여 본딩 층 평탄화에 미치는 영향을 살펴보았다. CMP 공정 후 Cu dishing은 약 $180{\AA}$이었고, 웨이퍼 표면부터 Cu 범프 표면까지의 최종 높이는 약 $2000{\AA}$이었다.

• 센서학회지
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• 제24권1호
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• Journal of Ginseng Research
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• 제43권3호
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• pp.394-401
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• 2019

Background: Ginsenoside Rb1, a triterpene saponin, is derived from the Panax ginseng root and has potent antiinflammatory activity. In this study, we determined if Rb1 can increase macrophage phagocytosis and elucidated the underlying mechanisms. Methods: To measure macrophage phagocytosis, mouse peritoneal macrophages or RAW 264.7 cells were cultured with fluorescein isothiocyanate-conjugated Escherichia coli, and the phagocytic index was determined by flow cytometry. Western blot analyses were performed. Results: Ginsenoside Rb1 increased macrophage phagocytosis and phosphorylation of p38 mitogenactivated protein kinase (MAPK), but inhibition of p38 MAPK activity with SB203580 decreased the phagocytic ability of macrophages. Rb1 also increased Akt phosphorylation, which was suppressed by LY294002, a phosphoinositide 3-kinase inhibitor. Rb1-induced Akt phosphorylation was inhibited by SB203580, (5Z)-7-oxozeaenol, and small-interfering RNA (siRNA)-mediated knockdown of $p38{\alpha}$ MAPK in macrophages. However, Rb1-induced p38 MAPK phosphorylation was not blocked by LY294002 or siRNA-mediated knockdown of Akt. The inhibition of Akt activation with siRNA or LY294002 also inhibited the Rb1-induced increase in phagocytosis. Rb1 increased macrophage phagocytosis of IgG-opsonized beads but not unopsonized beads. The phosphorylation of p21 activated kinase 1/2 and actin polymerization induced by IgG-opsonized beads and Rb1 were inhibited by SB203580 and LY294002. Intraperitoneal injection of Rb1 increased phosphorylation of p38 MAPK and Akt and the phagocytosis of bacteria in bronchoalveolar cells. Conclusion: These results suggest that ginsenoside Rb1 enhances the phagocytic capacity of macrophages for bacteria via activation of the p38/Akt pathway. Rb1 may be a useful pharmacological adjuvant for the treatment of bacterial infections in clinically relevant conditions.