• Title/Summary/Keyword: Si surface

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Properties of Mirror-surface Grinding for Metal Matrix Ceramic Composites (금속기지 세라믹 복합소재의 경면연삭 가공 특성)

  • Kwak, Tae-Soo
    • Journal of the Korean Ceramic Society
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    • v.49 no.1
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    • pp.90-94
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    • 2012
  • This study has been focused on properties of mirror surface grinding technology by ELID(Electrolytic In-process Dressing) for metal matrix ceramic composites using in high precision mirror for optics. The experimental studies have been carried out to get mirror surface by grinding for composites, Al-SiC, Al-graphite and Mg-SiC. Grinding process is carried out with varying abrasive mesh type, depth of cut and feed rate using diamond wheel. The machining result of the surface roughness and condition of ground surface, have been analyzed by use of surface roughness tester and SEM measurement system. ELID grinding technology could be applied successfully for the mirror-surface manufacturing processes in spite of ductility of metal matrix material. As the results of experiments, surface roughness of Al-SiC(45 wt%) has been the most superior in these experimental work-pieces as 0.021 ${\mu}m$ Ra.

First-principles Study on the Half-metallicity and Magnetism of a Full Heusler Alloy, Co2HfSi, in Bulk State and at its (001) Surfaces

  • Jin, Ying-Jiu;Lee, Jae-Il
    • Journal of Magnetics
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    • v.13 no.4
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    • pp.115-119
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    • 2008
  • The authors predicted that $Co_2HfSi$, a $Co_2$-based full Heusler alloy, is being a half-metallic ferromagnet by first-principles calculations using the all electron full-potential linearized augmented plane wave method which adopts the generalized gradient approximation. The integer value of the calculated total magnetic moment of 2.00 ${\mu}_B$ per formula unit and a spin gap of 0.69 eV in spin down state confirmed the half-metallicity of bulk $Co_2HfSi$. For the $Co_2HfSi$(001) surface, we considered two possible surface terminations, namely, Co terminated and HfSi terminated surfaces. It was found that half-metallicity was retained at the HfSi-terminated surface but not at the Co-terminated surface. The magnetic moment of surface Co atoms in the Co-terminated surface was slightly lower than that of Co atoms in deep inner-layers, whereas the magnetic moments of Hf and Si atoms at the HfSi-terminated surface were almost same as those in deep inner-layers.

Scanning Kelvin Probe Microscopy analysis of silicon carbide device structures (Scanning Kelvin Probe Microscopy를 이용한 SiC 소자의 분석)

  • Jo, Yeong-Deuk;Ha, Jae-Geun;Koh, Jung-Hyuk;Bang, Uk;Kim, Sang-Cheol;Kim, Nam-Gyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.132-132
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    • 2008
  • Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.

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Fiber network with superhydrophilic Si-DLC coating

  • Kim, Seong-Jin;Mun, Myeong-Un;Lee, Gwang-Ryeol;Kim, Ho-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.363-363
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    • 2010
  • The high capillarity of a plastic fiber network having superhydrophilic Si-DLC coating is studied. Although the superhydrophilic surface maximize wetting ability on the flat surface, there remains a requirement for the more wettable surface for various applications such as air-filters or liquid-filters. In this research, the PET non-woven fabric surface was realized by superhydrophilic coating. PTE non-woven fabric network was chosen due to its micro-pore structure, cheap price, and productivity. Superhydrophobic fiber network was prepared with a coating of oxgyen plasma treated Si-DLC films using plasma-enhanced chemical vapor deposition (PECVD). We first fabricated superhydrophilic fabric structure by using a polyethylene terephthalate (PET) non-woven fabric (NWF) coated with a nanostructured films of the Si-incorporated diamond-like carbon (Si-DLC) followed by the plasma dry etching with oxygen. The Si-DLC with oxygen plasma etching becomes a superhydrophilic and the Si-DLC coating have several advantages of easy coating procedure at room temperature, strong mechanical performance, and long-lasting property in superhydrophilicity. It was found that the superhydrophobic fiber network shows better wicking ability through micro-pores and enables water to have much faster spreading speed than merely superhydrophilic surface. Here, capillarity on superhydrophilic fabric structure is investigated from the spreading pattern of water flowing on the vertical surface in a gravitational field. As water flows on vertical flat solid surface always fall down in gravitational direction (i.e. gravity dominant flow), while water flows on vertical superhydrophilic fabric surface showed the capillary dominant spreading.

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Reactive molecular dynamics study of very initial dry oxidation of Si(001)

  • Pamungkas, Mauludi Ariesto;Joe, Minwoong;Kim, Byung-Hyun;Kim, Gyu-Bong;Lee, Kwang-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.325-325
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    • 2011
  • Very initial stage of oxidation process of Si (001) surface at room temperature (300 K) and high temperature (1200 K) was investigated using large scale molecular dynamics simulation. Reactive force field potential [1] was used for the simulation owing to its ability to handle charge variation as well as breaking and forming of bonds associated with the oxidation reaction. The results show that oxygen molecules adsorb dissociatively or otherwise leave the silicon surface. Initial position and orientation of oxygen molecule above the surface play important role in determining final state and time needed to dissociate. At 300 K, continuous transformation of ion $Si^+$ (or suboxide Si2O) to $Si2^+$ (SiO), $Si3^+$ (Si2O3) and finally to $Si4^+$ (SiO2) clearly observed. High temperature silicon surface provide heat energy that enable oxygen atom to penetrate into deeper silicon surface. The heat energy also retards adsorption process. As a result, transformation of ion $Si^+$ is impeded at 1200 K.

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Adsorption Mechanisms of NH3 on Chlorinated Si(100)-2×1 Surface

  • Lee, Hee-Soon;Choi, Cheol-Ho
    • Bulletin of the Korean Chemical Society
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    • v.33 no.3
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    • pp.775-778
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    • 2012
  • The potential energy surfaces of ammonia molecule adsorptions on the symmetrically chlorinated Si(100)-$2{\times}1$ surface were explored with SIMOMM:MP2/6-31G(d). It was found that the initial nucleophilic attack by ammonia nitrogen to the surface Si forms a $S_N2$ type transition state, which eventually leads to an HCl molecular desorption. The second ammonia molecule adsorption requires much less reaction barrier, which can be rationalized by the surface cooperative effect. In general, it was shown that the surface Si-Cl bonds can be easily subjected to the substitution reactions by ammonia molecules yielding symmetric surface Si-$NH_2$ bonds, which can be a good initial template for subsequent surface chemical modifications. The ammonia adsorptions are in general more facile than the corresponding water adsorption, since ammonia is better nucleophile.

Synthesis and Surface Properties of Hierarchical SiO2 Coating Layers by Forming Au Nanoparticles (금 나노입자 형성을 이용한 계층구조 SiO2 코팅층의 제조 및 표면 특성)

  • Kim, Ji Yeong;Kim, Eun-Kyeong;Kim, Sang Sub
    • Korean Journal of Materials Research
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    • v.23 no.1
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    • pp.53-58
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    • 2013
  • Superhydrophobic $SiO_2$ layers with a micro-nano hierarchical surface structure were prepared. $SiO_2$ layers deposited via an electrospray method combined with a sol-gel chemical route were rough on the microscale. Au particles were decorated on the surface of the microscale-rough $SiO_2$ layers by use of the photo-reduction process with different intensities ($0.11-1.9mW/cm^2$) and illumination times (60-240 sec) of ultraviolet light. With the aid of nanoscale Au nanoparticles, this consequently resulted in a micro-nano hierarchical surface structure. Subsequent fluorination treatment with a solution containing trichloro(1H,2H,2H,2H-perfluorooctyl)silane fluorinated the hierarchical $SiO_2$ layers. The change in surface roughness factor was in good agreement with that observed for the water contact angle, where the surface roughness factor developed as a measure needed to evaluate the degree of surface roughness. The resulting $SiO_2$ layers revealed excellent repellency toward various liquid droplets with different surface tensions ranging from 46 to 72.3 mN/m. Especially, the micro-nano hierarchical surface created at an illumination intensity of $0.11mW/cm^2$ and illumination time of 60 sec showed the largest water contact angle of $170^{\circ}$. Based on the Cassie-Baxter and Young-Dupre equations, the surface fraction and work of adhesion for the micronano hierarchical $SiO_2$ layers were evaluated. The work of adhesion was estimated to be less than $3{\times}10^{-3}N/m$ for all the liquid droplets. This exceptionally small work of adhesion is likely to be responsible for the strong repellency of the liquids to the micro-nano hierarchical $SiO_2$ layers.

ADSORPTION OF ATOMIC-HYDROGAN ON THE Si(100)-(2$\times$l)-SB SURFACE STUDIED BY TOF-ICISS/LEED

  • Ryu, Jeong-Tak;Kui, Koichiro;Katayama, Mitsuhiro;Oura, Kenjiro
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.884-890
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    • 1996
  • We have investigated a structural change of Si(100)-($2 \times 1$)-Sb surface caused by atomic hydrogen adsorption at room temperature using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) and low energy electron diffraction (LEED). We found that when atomic hydrogen adsorbs on the Si(100)-($2 \times 1$)-Sb surface, (1) the partial desorption of Sb atoms from the Si(100) surface occurs even at room temperature, (2) the rest Sb atoms are displaced from their original positions and form an almost two-dimensional layer with dispersive distribution of Sb atoms, and (3) the structural transformation into the Si(100)-($1 \times 1$)-H periodicity is induced by the formation of the $1 \times 1$-H dihydride phase on the Si substrate.

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Concentration of Liquid-phase in the Surface Region and Microstructural Change in Pressureless Sintered$\beta$-SiC (상압소결 $\beta$-SiC에 있어서 표면부에서의 액상집중과 미세구조의 변화)

  • Lee, Jong-Kook;Yang, Gwon-Seung;Kim, Hwan
    • Journal of the Korean Ceramic Society
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    • v.33 no.8
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    • pp.921-927
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    • 1996
  • The liquid-phase concentration from the interior to the surface region and its influence on the microstructural changes were investigated in pressureless sintered $\beta$-SiC Surface reaction-layer was formed by reaction of packing powder and volatile components on the surface during sintering which was induced the concentration of liquid-phase in the surface regions. The microstructural changes between the surface region and the interior were appeared in sintered specimen which was resulted from the difference of liquid-phase content during sintering. Microstructural changes were observd with the depth of about 250${\mu}{\textrm}{m}$ from he surface. The grain size and aspect ratio of SiC in the interior are larger than those in the surface region and the rate of transforma-tion of $\beta$-to $\alpha$-SiC during sintering is higher in the interior than that in the surface region.

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