• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.103.2-103.2
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• 2011

리튬이차전지의 음극물질로서 상용화되고 있는 탄소재료중 흑연은 전기자동차에 적용하기에는 낮은 용량과 나쁜 출력특성을 갖고 있어 지금보다 두배이상의 용량과 출력특성이 좋은 음극소재의 개발이 필요하다. 또 다른 음극물질로 실리콘은 흑연에 비해 월등히 높은 이론용량을 나타내고 있지만 실리콘이 리튬이온과 만나면 부피가 4배이상 팽창하여 사이클이 진행될수록 충방전 용량이 급격히 감소하게 된다. 그래서 본 연구에서는 이 두 음극소재를 상호보완하기 위해 천연흑연을 산처리 과정을 통해 제조된 팽창흑연을 매트릭스로 사용하여 팽창흑연에 실리콘을 충진 시키는 연구를 진행하였다. 팽창흑연에 실리콘을 충진시킴으로써 1C일 때 약 650mAh/g의 용량을 나타내었으며, 50cycle이 진행된 후에도 비교적 안정한 사이클 특성을 나타내었다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.214-217
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• 2003

상하로 양극 영역이 중첩된 새로운 Si 포토다이오드를 제작하고 이의 전기광학적 특성을 조사하였다. 제작된 소자의 역포화전류와 이상계수는 각각 68pA와 1.8로 나타났으며 -3V 바이어스에서 측정된 접합 커패시턴스는 8.3 pF로 나타났다. 또한 $100mW/cm^2$, AMI 스펙트럼 조건에서 -3V 바이어스 아래 측정된 광전류와 감도특성은 각각 $60\;{\mu}A$와 6 A/W로 나타났다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.145-146
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• 2008

RF 마그네트론 스퍼터링의 파워 ($50{\sim}150W$) 및 분압 ($2{\sim}10\;mTorr$)등의 증착 조건과 두께 ($50{\sim}1200nm$)에 따르는 Si 박막의 미세구조 변화와 그에 따르는 전기화학적 특성에 대하여 연구하였다. 파워와 분압이 증가할수록 미세구조가 거칠어지며 그에 따라 초기용량은 증가하였으며 두께가 증가함에 따라 사이클 특성은 감소하는 경향을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.245-245
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• 2008

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.251-257
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning, high temperature process which consumes vast chemicals and ultra Pure water(UPW). This technology gives rise to the many environmental issues, therefore some alternatives have been studied. In this study, intentionally contaminated Si wafers were cleaned using the electrolyzed water(EW). The EW was generated by an electrolysis equipment which was composed of anode. cathode, and toddle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case $NH_4$Cl electrolyte, the oxidation-reduction potential(ORP) and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.7, and -750mV and 9.8, respectively. For cleaning metallic impurities, AW was confirmed to be more effective than that of CW, and the particle distribution after various particle removal processes was shown to be same distribution.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.16-21
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• 2016

Silicon/Carbon/CNT composites as anode materials for lithium-ion batteries were synthesized to overcome the large volume change during lithium alloying-de alloying process and low electrical conductivity. Silicon/Carbon/CNT composites were prepared by the fabrication processes including the synthesis of SBA-15, magnesiothermic reduction of SBA-15 to obtain Si/MgO by ball milling, carbonization of phenolic resin with CNT and HCl etching. The prepared Silicon/Carbon/CNT composites were analysed by XRD, SEM, BET and EDS. In this study, the electrochemical effect of CNT content to improve the capacity and cycle performance was investigated by charge/discharge, cycle, cyclic voltammetry and impedance tests. The coin cell using Silicon/Carbon/CNT composite (Si:CNT=93:7 in weight) in the electrolyte of $LiPF_6$ dissolved in organic solvents (EC:DMC:EMC=1:1:1 vol%) has better capacity (1718 mAh/g) than those of other composition coin cells. The cycle performance of coin cell was improved as CNT content was increased. It is found that the coin cell (Si:CNT=89:11 in weight) has best capacity retension (83%) after 2nd cycle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.602-606
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• 2003

Silicon has been developed as an alternate anode material for lithium secondary batteries. A simple approach to improve the electrical contact of silicon powder has described. Carbon-coated and silver-coated silicon have been prepared by chemical vapor deposition and electroless plating respectively. Assembled cells, which consisted of surface modified silicon, lithium foil and $Li^+$ contained organic electrolyte, have been studied using electrochemical methods. Carbon-coated silicon was improved in the electrochemical performance such as reversibility and resistance compared to surface-unmodified silicon.

• Journal of the Korean Electrochemical Society
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• v.18 no.2
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• pp.68-74
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• 2015

To compare the microstructure and electrochemical properties between two binary alloys (Cr-Si, Ni-Si), two composition of binary alloys with the same capacity were selected using phase-diagram and prepared by matrix-stabilization method to suppress the volume expansion of Si by inactive-matrix. Master alloys were made by Arc-melting followed by fine structured ribbon sample preparation by Rapid Solidification Process (RSP, Melt-spinning method) under the same conditions. Also powder samples were produced by wet grinding for X-Ray Diffraction (XRD) and electrochemical measurements. As predicted from the phase diagram, only active-Si and inactive-matrix ($CrSi_2$, $NiSi_2$) were detected. The results of Scanning Electron Microscope (SEM) and Transmission Electron Microscopy - Energy Dispersive X-ray Spectroscopy (TEM-EDS) show that Cr-Si alloy has finer microstructure than Ni-Si alloy, which was also predictable through phase diagram. The electrochemical properties related to microstructure were evaluated by coin type full- and half-cells. Separately, self-designed test-cells were used to measure the volume expansion of Si during reaction. Volume expansion of Cr-Si alloy electrode with finer microstructure was suppressed significantly and improved in cycle capability, in comparison Ni-Si alloy with coarse microstructure. From these, we could infer the correlation of microstructure, volume expansion and electrochemical degradation and these properties might be predicted by phase diagram.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.145-150
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• 2007

The $SiO_2$ and $TiO_2$ thin films for the multilayer interference filter application were manufactured by electron beam process. In case of electron beam process with ion source, the anode current was controlled by gas volume ratio of $O_2$ and Ar. Substrate temperature of electron beam deposition without ion source was increased from 100 to $250^{\circ}C$ with $50^{\circ}C$ increment. The surface roughness values of $SiO_2$ thin films was most low value at $200^{\circ}C$ substrate temperature and 0.2 A anode current respectively. And the surface roughness values of $TiO_2$ thin films was most low value at room temperature and 0.2 A anode current repectively. The refractive index of $SiO_2$ and $TiO_2$ thin films to be deposited with ion source was usually lower than that of thin films without ion source.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.2
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• pp.74-79
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• 2002

In the a rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increases. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to the environmental issue. To resolve this matter, candidates of advanced cleaning processes has been studied. One of them is to apply the electrolyzed water. In this work, Compared with surface on Si wafer with electrolyzed water cleaning and various chemicals cleaning, and analyzed Si wafer surface condition treated with elecoolyzed water by cleaning temperature and cleaning time. Especially. concentrate upon the contact angle. finally, contact angle on surface treated with cathode water cleaning is 17.28, and anode water cleaning is 34.1.