• Resources Recycling
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• v.7 no.5
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• pp.52-57
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• 1998

Effect of Si in the electrochemical corrosion characteristics of Mg-Li-Al light alloy has been investigated by means of potentiodynamic polarization study. The elecrochemical behaviors were evaluated in 003% NaCl solution and the solution buffered with KH$_{2}PO_{5}{\cdot}$NaOH at room temperature. It was found that the addition of very small quantity of Si (0.48 wt%) in Mg-Li-Al light alloy increased corrosion rates and amount of corrosion products and decreated the pitting resistance of the alloy. From the results it was concluded that Si which is added to increase the strength of Mg-Li-Al alloy is harmful to corrosion properties of the alloy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.757-761
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• 2017

The computational fourier-transform moire (CFTM) method has been briefly explained and this method was used to perform strain analysis of a misfit dislocation in a strained $Si/Si_{0.55}Ge_{0.45}$ layer. An essential advantage of the CFTM method is that it does not require unwrapping, such that errors due to improper unwrapping can be excluded. The analysis results revealed that the Si layer was grown with tensile stress on $Si_{0.55}Ge_{0.45}$ and lattice constant of the Si layer along the growth direction was 1.9% smaller than that of $Si_{0.55}Ge_{0.45}$. On the other hand, strain of the misfit dislocation in the strained $Si/Si_{0.55}Ge_{0.45}$ layer was maximum at the dislocation core due to an extra half-plane and the $e_{xx}$ and $e_{yy}$ values were positive and negative, respectively, along the direction of a burgers vector.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.2
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• pp.475-485
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• 1995

In this study, statistical analysis of fatigue data which had obtained from respective 24 fatigue crack, was examined for SiC whisker reinforced aluminium 6061 composite alloy (SiC$_{w}$/A16061) and aluminium 6061 alloy. SiC volume fraction in composite alloy is 25%. The analysis results stress intensity factor range and 0.1 mm fatigue crack initiation life for SiC$_{w}$/A16061 composite & A16061 matrix are the log-normal distribution. And regression analysis by linear model, exponential model and multiplicative model were performed to find out the relationship between fatigue crack growth rate(da/dN) and stress intensity for find out the relationship between fatigue crack growth rate(da/dN) and stress intensity factor range(.DELTA.K) in the SiC$_{w}$/A16061 composite and examine the applicability of Paris' equation to SiC$_{w}$A16061 composite. Also computer simulation was performed for fatigue life prediction of SiC$_{w}$/A16061 composite using the statistical results of this study.udy.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.22 no.3
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• pp.171-180
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• 2010

Analysis on the temporal variation of the stratification is carried out by using the continuous water temperature and salinity data observed in the coastal monitoring buoy in Mikawa Bay, Japan. The main analysis results are as follows. The stratification pattern have an obvious and dominant 1-year period variation and the occurrence frequency (days) are exponentially decreased as the stratification intensity (SI) defined as the density difference between surface and bottom layers linearly increases. The frequency distribution function of the SI is presumably close to the log-normal function type or exponential function type. From the water temperature and salinity scatter diagram analysis, the line and loop type patterns are shown in the bottom and surface layers, respectively. In addition, the analysis of the SI estimation show that the error bound in case of using the weekly-monitoring data is about 4.45 times greater than that in case of using the continuous (daily) monitoring data.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.230-230
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• 2014

디지털 홀로그램 이미징 장치를 이용하여 박막과 웨이퍼 간의 두께 및 하전입자의 분포를 모니터링하는 센서의 성능을 보고한다. 이 센서는 웨이퍼와 SiN 박막 간의 경계를 구분하였으며, 경계에서의 하전입자의 분포의 분석도 가능함을 보였다. 이 센서는 다양한 종류의 계면 내지 박막 내부의 하전입자의 분포의 측정을 가능하게 하며, 또한 두께 변이의 실시간 측정도 가능하게 하여 향후 대량 생산현장에서의 광범위한 응용이 예상된다.

• Publications of The Korean Astronomical Society
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• v.7 no.1
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• pp.207-229
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• 1992

우리 은하계내 field RR Lyrae 변광성의 관측자료(GCVS 4th ed. )의 특성과 이들의 공간분포 및 증원소함량 분포를 조사하였다 이들의 공간분포에서 scale height 가 H = 0.6 kpc 인 원반(thick)형과 H = 2.2 kpc 인 헬로형의 두 성분으로 나타난다. 그리고 증원소함량의 은하중심거리와 은하정면거리에 따른 변화율은 각각 d[Fe/H]/dr = $-0.013\;{\sim}\;-0.020\;/kpc$ ($r\;{\le}\;20\;kpc$), d[Fe/H]/d|Z| = -0.034 /kpc ($|Z|\;{\le}\;10\;kpc$) 이다. 이러한 공간분포와 증원소함량의 기울기 변화는 구상성단의 경우와 비슷하게 이증진화모형을 나타낸다. 그러나 증원소함랑의 빈도분포로 보아 field RR Lyrae 변광성이 모두 구상성단에서 기원되었다고 보기는 어렵다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.237-237
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• 2011

본 연구에서는 중성입자빔과 일반적인 ICP 플라즈마를 이용하여 성장시킨 SiON 박막의 물리적 특성 및 전기적 특성을 비교하여 분석하였다. 중성입자빔 및 ICP 플라즈마를 이용하여 기판 온도 400$^{\circ}C$ 조건에서 공정 시간에 따라 각각의 SiON 박막을 성장시켰으며 SiON 박막에 metal insulator semiconductor(MIS) 구조를 만들어 capacitance-voltage (C-V), current-voltage (I-V) 특성, 박막 두께 및 박막 내의 질소 분포 등을 비교 분석하였다. 기판 온도 400$^{\circ}C$ 조건에서 형성시킨 중성입자빔 및 플라즈마-SiON 박막의 두께는 6.0~10.0 nm, 굴절률 (n)은 1.5~1.8이며, 유전 상수는 4.2~5.0이다. 중성입자빔 SiON 박막의 절연파괴 전압은 약 14 MV/cm 이며, 플라즈마-SiON 박막의 절연파괴전압은 약 9~11 MV/cm 수준으로 중성입자빔-SiON 박막에 비하여 낮은 수준이다. 따라서 중성입자빔을 이용하여 400$^{\circ}C$에서 하전 입자에 의한 손상이 없는 양질의 SiON 박막을 형성시킬 수 있었다.

• Ocean and Polar Research
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• v.26 no.2
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• pp.199-205
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• 2004

$SiO_2$ and CaO are added to decrease the smelting temperature in the reduction-smelting method for manganese nodule processing. These elements are components of the manganese nodules and might be very important controlling factors in the processing due to the locally variable content. The 707 chemical data of manganese nodules acquired from 1994 to 2001 in KODOS(Korea Deep Ocean Survey) area were used for the hierarchical cluster analysis. The chemical data were classified by the morphological types, and the averages of the chemical data for each station were classified by the facies groups and the localities. All data are plotted on the $SiO_2-CaO-MnO$ phase diagram at $1773^{\circ}K$ to compare with the best compositional area in the nodule smelting. Variations and distributions of $SiO_2$ and CaO in KODOS nodules were also reviewed. The mineral phases assigned by the cluster analysis are CFA(Carbonate Fluorapatite), Fe-oxide, Al-silicate, and Mn-oxide. MnO contents are generally higher than $SiO_2$ contents in most of the morphological types except for the Is- and It-type. The Dt- and Tt-type show wider range and the E-types show high anomaly in their CaO contents. The stations which belong to facies group A and B show generally higher MnO contents than $SiO_2$ contents, however, the stations of facies group C and D show wide range in their MnO and $SiO_2$ contents. It seems to be very important to control the $SiO_2$ contents in the processing because of the wide range in the northern area. The additions of approximately 10 wt.% CaO and 10 wt.% $SiO_2$ are recommended for the northern area, whereas, the additions of approximately 10 wt.% CaO and 20 wt.% $SiO_2$ are recommended for the southern area.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.126-130
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• 2013

The sodium (Na) and moisture ($H_2O$) gettering phenomena were measured and analyzed in PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. PSG/$SiO_2$ passivation and Al-1%Si thin films were deposited by using APCVD (atmosphere pressure chemical vapor deposition) and DC magnetron sputter techniques, respectively. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of sodium and moisture throughout the PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. Both sodium and moisture peaks were observed strongly at the interfaces between layers rather than within the Al-1%Si thin film interconnections. Sodium peaks were observed at the interface between PSG and $SiO_2$ passivations, while moisture peaks were not observed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.57-62
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• 1989

Sputter-deposited Ti film on Si substrates which were implanted with various doses of As was annealed at the temperature of 600-900$^{circ}C$ for 20 sec in Ar atmosphere. The sheet resistance of Ti-silicides was measured by 4-point probe, the thickness by $alpha$-step, and observed the behavior of As dopant in Si substrates by ASR. With increasing As doses, the thickness of Ti-silicides decreased and the sheet resistance of Ti-silicides increased. And we discussed the relationships between the above results and the factors of Si diffusion.